Teleportation of a controlled-NOT gate for photon and electron-spin qubits assisted by the nitrogen-vacancy center

2015 ◽  
Vol 15 (15&16) ◽  
pp. 1397-1419
Author(s):  
Ming-Xing Luo ◽  
Hui-Ran Li
Keyword(s):  
Electron Spin ◽  
Spin System ◽  
Room Temperature ◽  
Coherence Time ◽  
Nitrogen Vacancy ◽  
Cnot Gate ◽  
Long Distance ◽  
Two Photon ◽  
Nitrogen Vacancy Center ◽  
Vacancy Center

Teleportations of quantum gates are very important in the construction of quantum network and teleportation-based model of quantum computation. Assisted with nitrogenvacancy centers, we propose several schemes to teleport the quantum CNOT gate. Deterministic CNOT gate may be implemented on a remote two-photon system, remote two electron-spin system, hybrid photon-spin system or hybrid spin-photon system. Each photon only interacts with one spin each time. Moreover, quantum channel may be constructed by all combinations of the photon or electron-spin entanglement, or their hybrid entanglement. Since these electron-spin systems have experimentally shown a long coherence time even at the room temperature, our schemes provide useful ways for long-distance quantum applications.

scholarly journals Spin Readout Techniques of the Nitrogen-Vacancy Center in Diamond

Micromachines ◽  
2018 ◽  
Vol 9 (9) ◽  
pp. 437 ◽  
Author(s):  
David Hopper ◽  
Henry Shulevitz ◽  
Lee Bassett
Keyword(s):  
Quantum Information ◽  
Electron Spin ◽  
Room Temperature ◽  
Information Science ◽  
Nitrogen Vacancy ◽  
Single Shot ◽  
Spin Coherence ◽  
Quantum Information Science ◽  
Nitrogen Vacancy Center ◽  
Vacancy Center

The diamond nitrogen-vacancy (NV) center is a leading platform for quantum information science due to its optical addressability and room-temperature spin coherence. However, measurements of the NV center’s spin state typically require averaging over many cycles to overcome noise. Here, we review several approaches to improve the readout performance and highlight future avenues of research that could enable single-shot electron-spin readout at room temperature.

Investigation of Coherence Time of a Nitrogen-Vacancy Center in Diamond Created by a Low-Energy Nitrogen Implantation

2017 ◽  
Vol 48 (6) ◽  
pp. 571-577 ◽  
Author(s):  
Chathuranga Abeywardana ◽  
Zaili Peng ◽  
Laura C. Mugica ◽  
Edward Kleinsasser ◽  
Kai-Mei C. Fu ◽  
...  
Keyword(s):  
Coherence Time ◽  
Low Energy ◽  
Nitrogen Vacancy ◽  
Nitrogen Implantation ◽  
Nitrogen Vacancy Center ◽  
Vacancy Center

Oxidation-Process Dependence of Single Photon Sources Embedded in 4H-SiC MOSFETs

2018 ◽  
Vol 924 ◽  
pp. 281-284 ◽  
Author(s):  
Yuta Abe ◽  
Takahide Umeda ◽  
Mitsuo Okamoto ◽  
Shinobu Onoda ◽  
Moriyoshi Haruyama ◽  
...  
Keyword(s):  
Room Temperature ◽  
Oxidation Process ◽  
Field Effect Transistors ◽  
Single Photon ◽  
Metal Oxide Semiconductor ◽  
Nitrogen Vacancy ◽  
Oxide Semiconductor ◽  
Nitrogen Vacancy Center ◽  
Photon Sources ◽  
Vacancy Center

We investigated single photon sources (SPSs) in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) by means of confocal microscope techniques. We found SPSsonlyin 4H-SiC/SiO2interface regions of wet-oxide C-face MOSFETs. The other regions of MOSFETs such as source, drain and well did not exhibit SPSs. The luminescent intensity of the SPSs at room temperature was at least twice larger than that of the most famous SPSs, the nitrogen-vacancy center, in diamond. We examined four types of C-face and Si-face 4H-SiC MOSFETs with different oxidation processes, and found that the formation of the SPSs strongly depended on the preparation of SiC/SiO2interfaces.

scholarly journals Coherent Control of Nitrogen-Vacancy Center Spins in Silicon Carbide at Room Temperature

2020 ◽  
Vol 124 (22) ◽  
Author(s):  
Jun-Feng Wang ◽  
Fei-Fei Yan ◽  
Qiang Li ◽  
Zheng-Hao Liu ◽  
He Liu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Coherent Control ◽  
Nitrogen Vacancy ◽  
Nitrogen Vacancy Center ◽  
Vacancy Center

Electron Spin Decoherence of Nitrogen-Vacancy Center Coupled to Multiple Spin Baths

2016 ◽  
Vol 33 (10) ◽  
pp. 107601 ◽  
Author(s):  
Jian Xing ◽  
Yan-Chun Chang ◽  
Ning Wang ◽  
Gang-Qin Liu ◽  
Xin-Yu Pan
Keyword(s):  
Electron Spin ◽  
Nitrogen Vacancy ◽  
Nitrogen Vacancy Center ◽  
Spin Decoherence ◽  
Vacancy Center

Photoluminescence Studies of Both the Neutral and Negatively Charged Nitrogen-Vacancy Center in Diamond

2016 ◽  
Vol 22 (1) ◽  
pp. 108-112 ◽  
Author(s):  
Kaiyue Wang ◽  
John W. Steeds ◽  
Zhihong Li ◽  
Yuming Tian
Keyword(s):  
Laser Excitation ◽  
Nitrogen Concentration ◽  
High Energy ◽  
Nitrogen Vacancy ◽  
Long Distance ◽  
Migration Distance ◽  
Nitrogen Vacancy Center ◽  
Photoluminescence Studies ◽  
Vacancy Center ◽  
Nv Centers

AbstractIn this study low temperature micro-photoluminescence technology was employed to investigate effects of the irradiation and nitrogen concentration on nitrogen-vacancy (NV) luminescence, with the photochromic and vibronic properties of the NV defects. Results showed that the NV luminescence was weakened due to recombination of self-interstitials created by electron irradiation in diamond and the vacancies within the structure of NV centers. For very pure diamond, the vacancies migrated the long distance to get trapped by N atoms only after sufficient high temperature annealing. As with the increase in nitrogen content, the migration distance of vacancies got smaller. The nitrogen also favored the formation of negatively charged NV centers with the donating electrons. Under the high-energy ultraviolet laser excitation, the photochromic property of the NV− center was also observed, though it was not stable. Besides, the NV centers showed very strong broad sidebands, and the vibrations involved one phonon with energy of ~42 meV and another with ~67 meV energy.

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