Electrical Transport of Spin-Polarized Carriers in Disordered Ultrathin Films

2003 ◽  
Vol 91 (12) ◽  
Author(s):  
L. M. Hernandez ◽  
A. Bhattacharya ◽  
Kevin A. Parendo ◽  
A. M. Goldman
2020 ◽  
Vol 19 ◽  
pp. 103691
Author(s):  
Francisca Marín ◽  
Gabriel Gray ◽  
Claudio Gonzalez-Fuentes ◽  
Valeria del Campo ◽  
Patricio Häberle ◽  
...  

2013 ◽  
Vol 662 ◽  
pp. 485-489
Author(s):  
Guang Ming Ren ◽  
Jing Lin Liu

The samples with the nominal composition of (1-x)La0.67Ca0.33MnO3/xLaMnO3 with x=0.00, 0.05, 0.15 and 0.25 were fabricated using a special experimental method. The electrical transport behaviour and magnetoresistance (MR) were studied for the composites in magnetic fields H=0.3T, 3T. Experimental results show that with the increasing LaMnO3 doping level, the metal–insulator(M-I) transition temperature TP shifts to lower temperature and the resistivity increases sharply in zero magnetic field. Meanwhile, a significant enhancement in MR is observed for the composites especially in the low temperature range(below TP). Specially, the maximum MR at 3 T increased from 35% for the pure La0.67Ca0.33MnO3 to 92% for the sample with x=0.25. We suggest that such enhancement in MR is attributed to the strong ferro-antiferromagnetic coupling effects in the composite system, which increase the magnetic disorder at the grain surface and boundary, will improve the spin-polarized tunneling process of the conducting electron between adjacent grains, and thus enhance the MR effects.


2021 ◽  
Vol 258 (12) ◽  
pp. 2170054
Author(s):  
Miloš Baljozović ◽  
André L. Fernandes Cauduro ◽  
Johannes Seibel ◽  
Anaïs Mairena ◽  
Stéphane Grass ◽  
...  

2020 ◽  
Author(s):  
Erjian Cheng ◽  
Wei Xia ◽  
Jie Xu ◽  
Chengwei Wang ◽  
Chuanying Xi ◽  
...  

Abstract The nature of the interaction between magnetism and topology in magnetic topological semimetals remains mysterious, but may be expected to lead to a variety of novel physics. We present ab initio band calculations, electrical transport and angle-resolved photoemission spectroscopy (ARPES) measurements on the magnetic semimetal EuAs3, demonstrating a magnetism-induced topological transition from a topological nodal-line semimetal in the paramagnetic or the spin-polarized state to a topological massive Dirac metal in the antiferromagnetic (AFM) ground state at low temperature, featuring a pair of massive Dirac points, inverted bands and topological surface states on the (010) surface. Shubnikov-de Haas (SdH) oscillations in the AFM state identify nonzero Berry phase and a negative longitudinal magnetoresistance (n-LMR) induced by the chiral anomaly, confirming the topological nature predicted by band calculations. When magnetic moments are fully polarized by an external magnetic field, an unsaturated and extremely large magnetoresistance (XMR) of ∼ 2×105 % at 1.8 K and 28.3 T is observed, likely arising from topological protection. Consistent with band calculations for the spin-polarized state, four new bands in quantum oscillations different from those in the AFM state are discerned, of which two are topologically protected. Nodal-line structures at the Y point in the Brillouin zone (BZ) are proposed in both the spin-polarized and paramagnetic states, and the latter is proven by ARPES. Moreover, a temperature-induced Lifshitz transition accompanied by the emergence of a new band below 3 K is revealed. These results indicate that magnetic EuAs3 provides a rich platform to explore exotic physics arising from the interaction of magnetism with topology.


Author(s):  
Atsumi Miyashita ◽  
M. Maekawa ◽  
Y. Shimoyama ◽  
N. Seko ◽  
Atsuo Kawasuso ◽  
...  

Abstract Co2MnGa is a Weyl semimetal exhibiting giant anomalous Hall and Nernst effects. Using spin-polarized positron annihilation spectroscopy, we examined a Bridgman-grown Co2MnGa single crystal with a nearly perfect L21-ordered structure and a reference Co2MnAl polycrystal with a Mn-Al-disordered B2 structure. We found that a large amount of magnetic vacancies (more than 100 ppm) were included in the Co2MnGa crystal but not the Co2MnAl crystal. We discuss possible reasons for the inclusion of vacancies, the role of vacancies in the development of the ordered structure, and the electronic states associated with the vacancies. Towards the development of Co2MnGa-based devices, the manners for reducing vacancies as well as the influence of vacancies on the electrical transport properties should be considered.


1987 ◽  
Vol 91 ◽  
Author(s):  
J. C. Hensel ◽  
J. M. Phillips ◽  
J. L. Batstone ◽  
W. M. Augustyniak ◽  
F. C. Unterwald

ABSTRACTWe have performed electrical transport measurements on ultrathin films of epitaxial CoSi2 on Si(111) with film thickness ranging down to ∼10A. The resistivities exhibit temperature dependences characteristic of a metal and a thickness dependence which rises steeply with decreasing thickness suggestive of a quantum size effect. At the lowest temperatures (≲ 10K) the resistivities of the thinner films increase logarithmically with inverse temperature characteristic of transport in the weak localization regime as has been confirmed by magnetoresistance measurements. Hall effect measurements establish that carrier densities (holes) in the ultrathin films are essentially identical to those in bulk CoSi2, i.e. 26 × 1022 cm−3.


2013 ◽  
Vol 27 (15) ◽  
pp. 1362012
Author(s):  
L. Q. YANG ◽  
X. S. YANG ◽  
L. LV ◽  
Y. ZHAO

La 0.8 Sr 0.2 MnO 3 (LSMO)/ Zn composites were prepared by bonded method. The phase structure, electrical transport and low-field magnetoresistance (LFMR) characteristics have been investigated. The binder segregated mostly at the grain boundaries. The bonded composites exhibited enhanced LFMR, which was attributed to the enhanced intergrain spin-polarized tunneling behavior.


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