Observations of Ion-Beam Formation in a Current-Free Double Layer

2005 ◽  
Vol 95 (2) ◽  
Author(s):  
Xuan Sun ◽  
Amy M. Keesee ◽  
Costel Biloiu ◽  
Earl E. Scime ◽  
Albert Meige ◽  
...  
Keyword(s):  
Double Layer ◽  
Ion Beam ◽  
Beam Formation ◽  
A Current

Ion beam formation in the field of double layer stabilized by spatial reversal of magnetic field

2000 ◽  
Vol 8 (3) ◽  
pp. 147-166 ◽  
Author(s):  
A. A. Bizyukov ◽  
A. Y. Kashaba ◽  
V. I. Maslov ◽  
K. N. Sereda ◽  
N. D. Sereda ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Double Layer ◽  
Ion Beam ◽  
Spatial Reversal ◽  
Beam Formation

One-dimensional simulation of an ion beam generated by a current-free double-Layer

2005 ◽  
Vol 33 (2) ◽  
pp. 334-335 ◽  
Author(s):  
A. Meige ◽  
R.W. Boswell ◽  
C. Charles ◽  
J.-P. Boeuf ◽  
G. Hagelaar ◽  
...  
Keyword(s):  
Double Layer ◽  
Ion Beam ◽  
One Dimensional ◽  
Dimensional Simulation ◽  
A Current

scholarly journals HIGH VOLTAGE TEST BENCH FOR HEAVY ION BEAM PROBE DIAGNOSTICS ON T-15MD TOKAMAK

2020 ◽  
pp. 200-203
Author(s):  
N.A. Vadimov ◽  
G.A. Sarancha ◽  
M.A. Drabinskiy ◽  
A.V. Melnikov ◽  
L.G. Eliseev ◽  
...  
Keyword(s):  
High Voltage ◽  
Ion Beam ◽  
Diagnostic System ◽  
Heavy Ion ◽  
Beam Formation ◽  
Significant Attenuation ◽  
Heavy Ion Beam ◽  
Heavy Ion Beam Probe ◽  
Pass Through ◽  
A Current

D-shaped tokamak T-15MD is nowunder construction in the NRC "Kurchatov Institute". Heavy ion beam probing (HIBP) is an important part of T-15MD diagnostic system. Calculations of the probing ions trajectories show that the beam will pass through the plasma about 1.0…1.5 m, which can lead to its significant attenuation. HIBP operation requires obtaininga high-current long-focus probing beam of Tl+ ions (I = 200…400 μA, f = 4…6 m, d ≤ 10 mm). A high voltage (300 keV) test-benchto test such beams is being created now. Numerical modeling shows the possibility of a beam formation with a current of 300 μA and diameter 12 mm at 6 m from the ion emitter.

scholarly journals Focused Ion Beam Etching of GaN

1999 ◽  
Vol 4 (S1) ◽  
pp. 769-774 ◽  
Author(s):  
C. Flierl ◽  
I.H. White ◽  
M. Kuball ◽  
P.J. Heard ◽  
G.C. Allen ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Etching Rate ◽  
Side Wall ◽  
Device Fabrication ◽  
Direct Write ◽  
Ion Beam Etching ◽  
Etched Surface ◽  
A Current ◽  
Established Technique

We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching – a well-established technique for optical mask repair and for IC failure analysis and repair – without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5 × 10−4 μm3/pC. At a current of 3nA, for example, this corresponds to an each rate of 1.05 μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1 μm. Change in the roughness of the etched surface plane stay below 8nm.

Double-layer fabrication of cubic-manganites/hexagonal-ZnO on various substrates by ion beam sputtering, and variable electrical property

2014 ◽  
Vol 53 (5S1) ◽  
pp. 05FB10 ◽  
Author(s):  
Akira Okada ◽  
Kenichi Uehara ◽  
Miyoshi Yokura ◽  
Masahito Matsui ◽  
Katsuhiko Inaba ◽  
...  
Keyword(s):  
Electrical Property ◽  
Double Layer ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Pulsed ion beam formation of highly doped GaAs layers

1998 ◽  
Vol 139 (1-4) ◽  
pp. 418-421 ◽  
Author(s):  
Rustem M Bayazitov ◽  
Landish Kh Antonova ◽  
Ildus B Khaibullin ◽  
Gennadii E Remnev
Keyword(s):  
Ion Beam ◽  
Beam Formation
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