Laboratory evidence of a supersonic ion beam generated by a current-free “helicon” double-layer

We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching – a well-established technique for optical mask repair and for IC failure analysis and repair – without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5 × 10−4 μm3/pC. At a current of 3nA, for example, this corresponds to an each rate of 1.05 μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1 μm. Change in the roughness of the etched surface plane stay below 8nm.

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Double-layer fabrication of cubic-manganites/hexagonal-ZnO on various substrates by ion beam sputtering, and variable electrical property

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.05fb10 ◽

2014 ◽

Vol 53 (5S1) ◽

pp. 05FB10 ◽

Cited By ~ 5

Author(s):

Akira Okada ◽

Kenichi Uehara ◽

Miyoshi Yokura ◽

Masahito Matsui ◽

Katsuhiko Inaba ◽

...

Keyword(s):

Electrical Property ◽

Double Layer ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Beam Sputtering

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Tem Investigation and Hardness Improvement of A N+ Implanted Al-Alloy

MRS Proceedings ◽

10.1557/proc-400-287 ◽

1995 ◽

Vol 400 ◽

Cited By ~ 1

Author(s):

A.M. Serventi ◽

M. Vittori Antisari ◽

L. Guzman ◽

A. Miotello

Keyword(s):

Ion Beam ◽

Al Alloy ◽

Micro Hardness ◽

Cross Sectional ◽

Hardness Tests ◽

First Results ◽

Different Temperatures ◽

Nitrogen Ion ◽

A Current ◽

Vickers Micro Hardness

AbstractThe surface modification induced by nitrogen ion implantation on the Al-alloy 7075 has been studied with the aim of understanding the microstructural evolution and the phase separation during the implantation process. 150 keV N2+ ions have been implanted at different temperatures from 373 K to 473 K, with a current density of 5–15 µA/cm2 on previously polished samples. The implanted dose was in the range 1 × 1017 N/cm2 - 5 × 1017 N/cm2. Vickers micro-hardness tests and friction coefficient measurements show a real improvement in the mechanical behaviour of the alloy after the treatment.TEM observations of specimens treated at low temperature with different ion dose have been carried out at 200 kV on cross-sectional samples, prepared by ion beam milling. First results show the presence of small AlN hexagonal precipitates whose evolution is followed as a function of the implanted dose.

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Electromigration Reliability of Dual-Damascene Cu/Oxide Interconnects

MRS Proceedings ◽

10.1557/proc-612-d2.3.1 ◽

2000 ◽

Vol 612 ◽

Cited By ~ 13

Author(s):

Ennis T. Ogawa ◽

Volker A. Blaschke ◽

Alex Bierwag ◽

Ki-Don Lee ◽

Hideki Matsuhashi ◽

...

Keyword(s):

Focused Ion Beam ◽

Process Development ◽

Ion Beam ◽

Structure Design ◽

Test Structure ◽

Dual Damascene ◽

Interconnect Reliability ◽

Line Elements ◽

Larger Sample ◽

A Current

AbstractAn electromigration study has determined the lifetime characteristics and failure mode of dual-damascene Cu/oxide interconnects at temperatures ranging between 200 and 325 °C at a current density of 1.0 MA/cm2. A novel test structure design is used which incorporates a repeated chain of “Blech-type” line elements. The large interconnect ensemble permits a statistical approach to addressing interconnect reliability issues using typical failure analysis tools such as focused ion beam imaging. The larger sample size of the test structure thus enables efficient identification of “early failure” or extrinsic modes of interconnect failure associated with process development. The analysis so far indicates that two major damage modes are observable: (1) via-voiding and (2) voiding within the damascene trench.

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Observation of a current-limited double layer in a linear turbulent-heating device

The Physics of Fluids ◽

10.1063/1.865082 ◽

1985 ◽

Vol 28 (2) ◽

pp. 703 ◽

Cited By ~ 9

Author(s):

Hiroshi Inuzuka ◽

Yutaka Torii ◽

Masaaki Nagatsu ◽

Takashige Tsukishima

Keyword(s):

Double Layer ◽

Heating Device ◽

Turbulent Heating ◽

A Current

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Study on Hydrogen Evolution Properties of Carbon Supported PtCu-LaOx Membrane Electrode Materials

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.311-313.2344 ◽

2011 ◽

Vol 311-313 ◽

pp. 2344-2347

Author(s):

Bin Yang ◽

Tao Xu

Keyword(s):

Hydrogen Evolution ◽

Double Layer ◽

Current Density ◽

Electrode Materials ◽

Layer Structure ◽

Ion Beam ◽

Exchange Current ◽

Exchange Current Density ◽

Membrane Electrode ◽

Membrane Electrodes

In order to reduce production cost of making H2, one of the key points was to reduce Pt loading in Pt/C catalytic electrode. In our study, a new type of Pt/C membrane electrodes, PtCu-LaOx/C (abbr. PCL) and LaOx-PtCu/C (abbr. LPC) double-layer structure, in which Pt nanometer particles homogeneously dispersed on the surface of carbonaceous substrates were manufactured by Ion Beam Sputtering (IBS) technology. The hydrogen evolution polarization curves of these double-layer membrane electrodes were tested by three-electrode system, and the optimal sample was selected by the calculation results of their exchange current density (i0) and decomposition voltage (Ed). It was found that PCL with Pt loading less than 0.05mg/cm2 (the electrode area) whose decomposition voltage and exchange current density was -0.204(V vs SCE) and 147.0μA/cm2 respectively in balanced condition.

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