Effect of correlated oxide electrodes on disorder pinning and thermal roughening of ferroelectric domain walls in epitaxial 
PbZr0.2Ti0.8O3
 thin films

ABSTRACTIn this paper we will present recent experimental results, using electron holography and electron interferometry, of studies of ferroelectric domain walls in BaTiO3 thin films. Unlike conventional TEM diffraction contrast imaging of ferroelectrics, the new technique that we have developed not only allows direct visualization of ferroelectric domain walls and electrostatic field distributions in the vicinity of the domain wall, but also enables quantitative measurement of domain wall width and local polarization. We have measured 90° domain wall width to be between 20 to 50 Å for a BaTiO3 thin specimen. The variation of polarization across the domain wall will be shown to be close to that predicted by the Zhirnov model. The value of the measured spontaneous polarization is about 1.5×10−5 C/cm2, which is closed to the bulk macroscopically measured value.

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Imaging of ferroelectric domain walls by electron holography

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100121636 ◽

1992 ◽

Vol 50 (1) ◽

pp. 246-247

Author(s):

Xiao Zhang

Keyword(s):

Magnetic Field ◽

High Resolution ◽

Domain Walls ◽

Ferroelectric Domain ◽

Object Wave ◽

Electron Holography ◽

High Resolution Imaging ◽

Quantitative Measurements ◽

Resolution Imaging ◽

Electron Microscopes

Electron holography has recently been available to modern electron microscopy labs with the development of field emission electron microscopes. The unique advantage of recording both amplitude and phase of the object wave makes electron holography a effective tool to study electron optical phase objects. The visibility of the phase shifts of the object wave makes it possible to directly image the distributions of an electric or a magnetic field at high resolution. This work presents preliminary results of first high resolution imaging of ferroelectric domain walls by electron holography in BaTiO3 and quantitative measurements of electrostatic field distribution across domain walls.

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Charged Exciton Kinetics in Monolayer MoSe2 near Ferroelectric Domain Walls in Periodically Poled LiNbO3

Nano Letters ◽

10.1021/acs.nanolett.0c03810 ◽

2021 ◽

Vol 21 (2) ◽

pp. 959-966

Author(s):

Pedro Soubelet ◽

Julian Klein ◽

Jakob Wierzbowski ◽

Riccardo Silvioli ◽

Florian Sigger ◽

...

Keyword(s):

Domain Walls ◽

Ferroelectric Domain ◽

Periodically Poled ◽

Charged Exciton

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Effect of Bottom Electrodes on Structural and Electrical Properties of Laser Ablated SrBi2Ta2O9 Thin Films

MRS Proceedings ◽

10.1557/proc-688-c4.11.1 ◽

2001 ◽

Vol 688 ◽

Author(s):

Rasmi R. Das ◽

W. Pérez ◽

P. Bhattacharya ◽

Ram. S. Katiyar

Keyword(s):

Thin Films ◽

Barrier Height ◽

Ferroelectric Properties ◽

High Resistivity ◽

Emission Model ◽

X Ray Diffraction ◽

Oxide Electrodes ◽

Maximum Value ◽

Structural And Electrical Properties ◽

Raman Modes

AbstractWe have grown SrBi2Ta2O9 (SBT) thin films on various bottom electrodes such as Pt/TiO2/SiO2/Si (Pt) and LaNiO3/Pt/TiO2/SiO2/Si (LNO) substrates. The substrate temperature and oxygen pressure for the SBT film was maintained at 500 °C and 200 mTorr. As-grown films were post-annealed at a temperature of 800 °C. X-ray diffraction studies revealed that as-grown films were amorphous and crystallized to single phase after annealing. The difficulty of obtaining lowest Raman modes of SBT on platinized silicon substrate was overcome by using conducting oxide electrodes. Films grown on platinized silicon showed maximum value of remanent polarization (2Pr ∼ 21.5 μC/cm2) with coercive field (Ec) of ∼ 67 kV/cm. The degradation of ferroelectric properties of the films was observed with the introduction of 50 nm conducting LaNiO3 electrode at the interface of Pt and SBT film, which was attributed to high resistivity of the oxide electrode layers. Leakage current density was studied with the consideration of the Schottky emission model. The barrier height of the films grown on Pt and LNO were estimated to be 1.27 eV and 1.12 eV, respectively. The reduction of barrier height was attributed to the lower work function of the LNO electrode.

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