scholarly journals Dynamically assisted tunneling in the impulse regime

2021 ◽  
Vol 3 (3) ◽  
Author(s):  
Christian Kohlfürst ◽  
Friedemann Queisser ◽  
Ralf Schützhold
Keyword(s):  
Assisted Tunneling

Efficiency degradation induced by surface defects-assisted tunneling recombination in GaN/InGaN micro-light-emitting diodes

2021 ◽  
Vol 118 (2) ◽  
pp. 021105
Author(s):  
Jian Yin ◽  
Ehsanollah Fathi ◽  
Hossein Zamani Siboni ◽  
Chao Xu ◽  
Dayan Ban
Keyword(s):  
Light Emitting Diodes ◽  
Surface Defects ◽  
Light Emitting ◽  
Tunneling Recombination ◽  
Assisted Tunneling

Charge transport and photon-assisted tunneling in the NSN single-electron transistor

1994 ◽  
Vol 203 (3-4) ◽  
pp. 327-339 ◽  
Author(s):  
J.M. Hergenrother ◽  
M.T. Tuominen ◽  
J.G. Lu ◽  
D.C. Ralph ◽  
M. Tinkham
Keyword(s):  
Charge Transport ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Assisted Tunneling

scholarly journals Photon-assisted tunneling in aFe8single-molecule magnet

2003 ◽  
Vol 68 (22) ◽  
Author(s):  
L. Sorace ◽  
W. Wernsdorfer ◽  
C. Thirion ◽  
A.-L. Barra ◽  
M. Pacchioni ◽  
...  
Keyword(s):  
Assisted Tunneling

APPLICATION OF EPITAXIAL UNIPOLAR BARRIERS TO REDUCE NOISE CURRENTS IN PHOTODETECTORS

2011 ◽  
Vol 20 (03) ◽  
pp. 557-564
Author(s):  
G. R. SAVICH ◽  
J. R. PEDRAZZANI ◽  
S. MAIMON ◽  
G. W. WICKS
Keyword(s):  
Leakage Current ◽  
Surface Passivation ◽  
Leakage Currents ◽  
Type Region ◽  
Surface Leakage Current ◽  
Unipolar Barrier ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling ◽  
Tunneling Currents ◽  
Surface Leakage

Tunneling currents and surface leakage currents are both contributors to the overall dark current which limits many semiconductor devices. Surface leakage current is generally controlled by applying a post-epitaxial passivation layer; however, surface passivation is often expensive and ineffective. Band-to-band and trap assisted tunneling currents cannot be controlled through surface passivants, thus an alternative means of control is necessary. Unipolar barriers, when appropriately applied to standard electronic device structures, can reduce the effects of both surface leakage and tunneling currents more easily and cost effectively than other methods, including surface passivation. Unipolar barriers are applied to the p -type region of a conventional, MBE grown, InAs based pn junction structures resulting in a reduction of surface leakage current. Placing the unipolar barrier in the n -type region of the device, has the added benefit of reducing trap assisted tunneling current as well as surface leakage currents. Conventional, InAs pn junctions are shown to exhibit surface leakage current while unipolar barrier photodiodes show no detectable surface currents.

Photon-assisted tunneling through a regular B-form single-stranded DNA with Majorana zero modes

2021 ◽  
Vol 415 ◽  
pp. 127655
Author(s):  
Han-Zhao Tang ◽  
Xiao-Tong Liao ◽  
Zhi-Bin Zhang ◽  
Yan-Xia Liu ◽  
Zhuo Gu
Keyword(s):  
Single Stranded Dna ◽  
Zero Modes ◽  
Assisted Tunneling

Trap-Assisted Tunneling in MIS and Schottky Structures

1983 ◽  
Vol 79 (1) ◽  
pp. 223-236 ◽  
Author(s):  
F. Campabadal ◽  
V. Milian ◽  
X. Aymerich-Humet
Keyword(s):  
Trap Assisted Tunneling ◽  
Assisted Tunneling

scholarly journals Dynamics of spin-flip photon-assisted tunneling

2014 ◽  
Vol 89 (7) ◽  
Author(s):  
F. R. Braakman ◽  
J. Danon ◽  
L. R. Schreiber ◽  
W. Wegscheider ◽  
L. M. K. Vandersypen
Keyword(s):  
Spin Flip ◽  
Assisted Tunneling

scholarly journals Photon-assisted tunneling in GaN nanowire white light emitting diodes

2009 ◽  
Vol 6 (S2) ◽  
pp. S538-S540 ◽  
Author(s):  
P.-C. Yeh ◽  
M.-C. Hwa ◽  
J.-W. Yu ◽  
H.-M. Wu ◽  
H.-L. Tsai ◽  
...  
Keyword(s):  
White Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Gan Nanowire ◽  
Assisted Tunneling ◽  
White Light Emitting Diodes
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