scholarly journals Experimental determination of precision, resolution, accuracy and trueness of time-of-flight neutron diffraction strain measurements

2020 ◽  
Vol 53 (2) ◽  
pp. 494-511
Author(s):  
I. C. Noyan ◽  
J. R. Bunn ◽  
M. K. Tippett ◽  
E. A. Payzant ◽  
B. Clausen ◽  
...  
Keyword(s):  
Thermal Expansion ◽  
Lattice Strain ◽  
Coefficient Of Thermal Expansion ◽  
Time Of Flight ◽  
Temperature Changes ◽  
Strain Measurements ◽  
Simple Statistical Analysis ◽  
Quantities Of Interest

A simple statistical analysis which yields the precision, resolution, accuracy and trueness of diffraction-based lattice strain measurements is discussed. The procedure consists of measuring the thermal expansion induced in each component of an ideal non-reacting two-component crystalline powder sample in situ. One component, with a high coefficient of thermal expansion (CTE), serves as an internal thermometer. The quantities of interest are obtained by determining the smallest statistically significant thermal lattice strain which can be detected through diffraction analysis in the second, low-CTE, component in response to controlled temperature changes. This procedure also provides a robust check of the alignment of the diffraction system and is able to reveal the presence of systematic errors. The application of this technique to a time-of-flight engineering diffractometer/strain scanner is presented.

Formalism for the determination of intermediate stress gradients using X-ray diffraction

2009 ◽  
Vol 42 (2) ◽  
pp. 192-197 ◽  
Author(s):  
Thomas Gnäupel-Herold
Keyword(s):  
Lattice Strain ◽  
Narrow Line ◽  
X Ray Diffraction ◽  
Beam Spot ◽  
Strain Measurements ◽  
One Dimensional ◽  
X Ray ◽  
Stress Gradients ◽  
Shaped Beam

A method is outlined that allows the determination of one-dimensional stress gradients at length scales greater than 0.2 mm. By using standard four-circle X-ray diffractometer equipment and simple aperture components, length resolutions down to 0.05 mm in one direction can be achieved through constant orientation of a narrow, line-shaped beam spot. Angle calculations are given for the adjustment of goniometer angles, and for the effective azimuth and tilt of the scattering vector for general angle settings in a four-circle goniometer. The latter is necessary for the computation of stresses from lattice strain measurements.

Characterization of Phase Transitions Occurring in Solution Treated Ti-15Mo during Heating by Thermal Expansion and Electrical Resistance Measurements

2016 ◽  
Vol 879 ◽  
pp. 2318-2323 ◽  
Author(s):  
Pavel Zháňal ◽  
Petr Harcuba ◽  
Michal Hájek ◽  
Jana Šmilauerová ◽  
Jozef Veselý ◽  
...  
Keyword(s):  
Thermal Expansion ◽  
Titanium Alloy ◽  
Phase Transitions ◽  
Electrical Resistance ◽  
Temperature Changes ◽  
Solution Treated ◽  
Electrical Resistance Measurements ◽  
Ongoing Phase

Metastable β titanium alloy Ti-15Mo was investigated in this study. In-situ electrical resistance and thermal expansion measurements conducted on solution treated material revealed influence of ongoing phase transitions on measured properties. The monotonicity of the dependence of electrical resistance on temperature changes at 225, 365 and 560 °C The thermal expansion deviates from linearity between 305 and 580 °C.

Determination of Mechanical Properties of Thin Film on Silicon Wafer

2003 ◽  
Author(s):  
Enboa Wu ◽  
Albert J. D. Yang ◽  
Ching-An Shao ◽  
C. S. Yen
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Thermal Expansion ◽  
Young’S Modulus ◽  
Silicon Wafer ◽  
Coefficient Of Thermal Expansion ◽  
Young's Modulus ◽  
Poisson Ratio ◽  
Bulk State

Nondestructive determination of Young’s modulus, coefficient of thermal expansion, Poisson ratio, and thickness of a thin film has long been a difficult but important issue as the film of micrometer order thick might behave differently from that in the bulk state. In this paper, we have successfully demonstrated the capability of determining all these four parameters at one time. This novel method includes use of the digital phase-shifting reflection moire´ (DPRM) technique to record the slope of wafer warpage under temperature drop condition. In the experiment, 1-um thick aluminum was sputtered on a 6-in silicon wafer. The convolution relationship between the measured data and the mechanical properties was constructed numerically using the conventional 3D finite element code. The genetic algorithm (GA) was adopted as the searching tool for search of the optimal mechanical properties of the film. It was found that the determined data for Young’s modulus (E), Coefficient of Thermal Expansion (CTE), Poisson ratio (ν), and thickness (h) of the 1.00 um thick aluminum film were 104.2Gpa, 38.0 ppm/°C, 0.38, and 0.98 um, respectively, whereas that in the bulk state were measured to be E=71.4 Gpa, CTE=23.0 ppm/°C, and ν=0.34. The significantly larger values on the Young’s modulus and the coefficient of thermal expansion determined by this method might be attributed to the smaller dislocation density due to the thin dimension and formation of the 5-nm layer of Al2O3 formed on top of the 1-um thick sputtered film. The Young’s Modulus and the Poisson ratio of this nano-scale Al2O3 film were then determined. Their values are consistent with the physical intuition of the microstructure.

Sign in / Sign up

Export Citation Format

Share Document