Design of the trinitrotoluene biosensor using polydiacetylene conjugated with peptide receptors coated on GR-FETs with colorimetric response

Sensor Review ◽  
2019 ◽  
Vol 39 (6) ◽  
pp. 819-827 ◽  
Author(s):  
Saeid Masoumi ◽  
Hassan Hajghassem

Purpose Smart biosensors that can perform sensitive and selective monitoring of target analytes are tremendously valuable for trinitrotoluene (TNT) explosive detection. In this research, the pre-developed sensor was integrated with biological receptors in which they enhanced the sensitivity of the sensor. This is due to conjugated polydiacetylene onto a peptide-based molecular recognition element (Trp-His-Trp) for TNT molecules in graphene field-effect transistors (GR-FETs) as biosensor that is capable of responding to the presence of a TNT target with a colorimetric response. The authors confirmed the efficacy of the receptor while being attached to polydiacetylene (PDA) by observing the binding ability between the Trp-His-Trp and TNT to alter the electronic band structure of the PDA conjugated backbones. The purpose of this paper is to demonstrate a modular system capable of transducing small-molecule TNT binding into a detectable signal. The details of the real-time and selective TNT biosensor have been reported. Design/methodology/approach Following an introduction, this paper describes the way of fabrication GR-FETs with conventional photolithography techniques and the other processes, which is functionalized by the TNT peptide receptors. The authors first determined the essential TNT recognition elements from UV-visible spectrophotometry spectroscopy for PDA sensor unit fabrication. In particular, the blue percentage and the chromic response were used to characterize the polymerization parameter of the conjugated p backbone. A continuous-flow trace vapor source of nitroaromatics (two, four, six-TNT) was designed and evaluated in terms of temperature dependence. The TNT concentration was measured by liquid/gas extraction in acetonitrile using bubbling sequence. The sensor test is performed using a four-point probe and semiconductor analyzer. Finally, brief conclusions are drawn. Findings Because of their unique optical and stimuli-response properties, the polydiacetylene and peptide-based platforms have been explored as an alternative to complex mechanical and electrical sensing systems. Therefore, the authors have used GR-FETs with biological receptor-PDAs as a biosensor for achieving high sensitivity and selectivity that can detect explosive substances such as TNT. The transport property changed compared to that of the field-effect transistors made by intrinsic graphene, that is, the Dirac point position moved from positive Vg to negative Vg, indicating the transition of graphene from p-type to n-type after annealing in TNT, and when the device was tested from RT, the response of the device was found to increase linearly with increasing concentrations. Average shifting rate of the Dirac peak was obtained as 0.1-0.3 V/ppm. The resulting sensors exhibited at the limit ppm sensitivity toward TNT in real-time, with excellent selectivity over various similar aromatic compounds. The biological receptor coating may be useful for the development of sensitive and selective micro and nanoelectronic sensor devices for various other target analytes. Originality/value The detection of illegally transported explosives has become important as the global rise in terrorism subsequent to the events of September 11, 2001, and is at the forefront of current analytical problems. It is essential that a detection method has the selectivity to distinguish among compounds in a mixture of explosives. So, the authors are reporting a potential solution with the designing and manufacturing of electrochemical biosensor using polydiacetylene conjugated with peptide receptors coated on GR-FETs with the colorimetric response for real-time detection of TNT explosives specifically.

2013 ◽  
Vol 26 (1) ◽  
pp. 773-785 ◽  
Author(s):  
Anne-Marije Andringa ◽  
Claudia Piliego ◽  
Ilias Katsouras ◽  
Paul W. M. Blom ◽  
Dago M. de Leeuw

2010 ◽  
Vol 22 (46) ◽  
pp. 5297-5300 ◽  
Author(s):  
Rory Stine ◽  
Jeremy T. Robinson ◽  
Paul E. Sheehan ◽  
Cy R. Tamanaha

2016 ◽  
Vol 168 ◽  
pp. 469-472 ◽  
Author(s):  
Tibor Ižák ◽  
Václav Procházka ◽  
Toshiya Sakata ◽  
Bohuslav Rezek ◽  
Alexander Kromka

Carbon ◽  
2011 ◽  
Vol 49 (15) ◽  
pp. 5283-5291 ◽  
Author(s):  
Peerapong Yotprayoonsak ◽  
Konsta Hannula ◽  
Tanja Lahtinen ◽  
Markus Ahlskog ◽  
Andreas Johansson

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Abhay Sanjay Vidhyadharan ◽  
Sanjay Vidhyadharan

Purpose Tunnel field effect transistors (TFETs) have significantly steeper sub-threshold slope (24–30 mv/decade), as compared with the conventional metal–oxide–semiconductor field-effect transistors (MOSFETs), which have a sub-threshold slope of 60 mv/decade at room temperature. The steep sub-threshold slope of TFETs enables a much faster switching, making TFETs a better option than MOSFETs for low-voltage VLSI applications. The purpose of this paper is to present a novel hetero-junction TFET-based Schmitt triggers, which outperform the conventional complementary metal oxide semiconductor (CMOS) Schmitt triggers at low power supply voltage levels. Design/methodology/approach The conventional Schmitt trigger has been implemented with both MOSFETs and HTFETs for operation at a low-voltage level of 0.4 V and a target hysteresis width of 100 mV. Simulation results have indicated that the HTFET-based Schmitt trigger not only has significantly lower delays but also consumes lesser power as compared to the CMOS-based Schmitt trigger. The limitations of the conventional Schmitt trigger design have been analysed, and improved CMOS and CMOS–HTFET hybrid Schmitt trigger designs have been presented. Findings The conventional Schmitt trigger implemented with HTFETs has 99.9% lower propagation delay (29ps) and 41.2% lesser power requirement (4.7 nW) than the analogous CMOS Schmitt trigger, which has a delay of 36 ns and consumes 8 nW of power. An improved Schmitt trigger design has been proposed which has a transistor count of only six as compared to the eight transistors required in the conventional design. The proposed improved Schmitt trigger design, when implemented with only CMOS devices enable a reduction of power delay product (PDP) by 98.4% with respect to the CMOS conventional Schmitt trigger design. The proposed CMOS–HTFET hybrid Schmitt trigger further helps in decreasing the delay of the improved CMOS-only Schmitt trigger by 70% and PDP by 21%. Originality/value The unique advantage of very steep sub-threshold slope of HTFETs has been used to improve the performance of the conventional Schmitt trigger circuit. Novel CMOS-only and CMOS–HTFET hybrid improved Schmitt trigger designs have been proposed which requires lesser number of transistors (saving 70% chip area) for implementation and has significantly lower delays and power requirement than the conventional designs.


2015 ◽  
Vol 11 (9) ◽  
pp. 1640-1643 ◽  
Author(s):  
Jae-Hyuk Ahn ◽  
Maesoon Im ◽  
Tae Jung Park ◽  
Sang Yup Lee ◽  
Yang-Kyu Choi

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