Comments, with reply, on "A scanning electron- or light-beam-induced current method for determination of grain boundary recombination velocity in polycrystalline semiconductors" by C.A. Dimitriadis

1993 ◽  
Vol 40 (6) ◽  
pp. 1190-1191 ◽  
Author(s):  
C. Donolato
Keyword(s):  
Grain Boundary ◽  
Light Beam ◽  
Current Method ◽  
Induced Current ◽  
Recombination Velocity ◽  
Scanning Electron ◽  
Polycrystalline Semiconductors

Grain Boundary Characterization in Polysilicon by Light Beam Induced Current Topography and Image Processing

1987 ◽  
Vol 106 ◽  
Author(s):  
K. Masri ◽  
J. P. Boyeaux ◽  
S. N. Kumar ◽  
L. Mayet ◽  
A. Laugier
Keyword(s):  
Grain Boundary ◽  
Light Beam ◽  
High Performance ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Induced Current ◽  
Minority Carrier Diffusion Length ◽  
A Value ◽  
Recombination Velocity ◽  
P Type

ABSTRACTA high performance light-beam-induced-current (LBIC) analyser has been used to determine the recombination velocity at the grain boundary (S) and the minority-carrier diffusion length (L). For this purpose a Schottky diode (Cr/Si) was fabricated using a p-type silicon bicrystal (1Ω cm, Σ13 grain boundary). The contacts were obtained by a “cold” technology. The diffusion length, determined by the method proposed by Ioannou, was subsequently fitted into the model proposed by Marek to evaluate the recombination velocity by the curve-fitting of the experimental and theoretical photocurrent profiles. A value of S = 2.104 cm/s was thus obtained. The influence of the thin oxide layer at the Cr/Si interface is also discussed.

Determination of diffusion length and grain boundary recombination velocity by laser excitation

1986 ◽  
Vol 33 (11) ◽  
pp. 1780-1784
Author(s):  
C.A. Dimitriadis ◽  
O. Valassiades ◽  
L. Papadimitriou ◽  
N.A. Economou
Keyword(s):  
Grain Boundary ◽  
Laser Excitation ◽  
Diffusion Length ◽  
Recombination Velocity
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