Enhanced resonant tunneling real-space transfer in δ-doped GaAs/InGaAs gated dual-channel transistors grown by MOCVD

1996 ◽  
Vol 43 (2) ◽  
pp. 207-212 ◽  
Author(s):  
Chang-Luen Wu ◽  
Wei-Chou Hsu
Keyword(s):  
Resonant Tunneling ◽  
Real Space ◽  
Dual Channel ◽  
Real Space Transfer

Real-space transfer by hot electron resonant tunneling

1993 ◽  
Vol 13 (4) ◽  
pp. 397
Author(s):  
T.K. Higman ◽  
Jihong Chen ◽  
M.S. Hagedorn ◽  
F. Williamson
Keyword(s):  
Resonant Tunneling ◽  
Real Space ◽  
Hot Electron ◽  
Real Space Transfer

scholarly journals A peculiarity of quantum hot-electron real space transfer in dual-channel GaAs-based heterostructures

2017 ◽  
Vol 1 (4) ◽  
pp. 045002 ◽  
Author(s):  
V V Vainberg ◽  
O G Sarbey ◽  
A S Pylypchuk ◽  
V N Poroshin ◽  
N V Baidus
Keyword(s):  
Real Space ◽  
Hot Electron ◽  
Dual Channel ◽  
Real Space Transfer

scholarly journals Увеличение насыщенной скорости дрейфа электронов в pHEMT-гетероструктурах с донорно-акцепторным легированием

2018 ◽  
Vol 44 (6) ◽  
pp. 77
Author(s):  
Д.Ю. Протасов ◽  
Д.В. Гуляев ◽  
А.К. Бакаров ◽  
А.И. Торопов ◽  
Е.В. Ерофеев ◽  
...  
Keyword(s):  
Drift Velocity ◽  
High Electron Mobility Transistor ◽  
Real Space ◽  
Electron Drift Velocity ◽  
Hot Electrons ◽  
Electron Drift ◽  
High Electron ◽  
High Electron Mobility ◽  
Donor Acceptor ◽  
Real Space Transfer

AbstractField dependences of the electron-drift velocity in typical pseudomorphic high-electron-mobility transistor (pHEMT) heteroepitaxial structures (HESs) and in those with donor–acceptor doped (DApHEMT) heterostructures with quantum-well (QW) depth increased by 0.8–0.9 eV with the aid of acceptor layers have been studied by a pulsed technique. It is established that the saturated electron-drift velocity in DA-pHEMT-HESs is 1.2–1.3 times greater than that in the usual pHEMT-HESs. The electroluminescence (EL) spectra of DA-pHEMT-HESs do not contain emission bands related to the recombination in widebandgap layers (QW barriers). The EL intensity in these HESs is not saturated with increasing electric field. This is indicative of a suppressed real-space transfer of hot electrons from QW to barrier layers, which accounts for the observed increase in the saturated electron-drift velocity.

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