scholarly journals A peculiarity of quantum hot-electron real space transfer in dual-channel GaAs-based heterostructures

2017 ◽  
Vol 1 (4) ◽  
pp. 045002 ◽  
Author(s):  
V V Vainberg ◽  
O G Sarbey ◽  
A S Pylypchuk ◽  
V N Poroshin ◽  
N V Baidus
Keyword(s):  
Real Space ◽  
Hot Electron ◽  
Dual Channel ◽  
Real Space Transfer

Measurements of hot‐electron conduction and real‐space transfer in GaAs‐AlxGa1−xAs heterojunction layers

1981 ◽  
Vol 38 (1) ◽  
pp. 36-38 ◽  
Author(s):  
M. Keever ◽  
H. Shichijo ◽  
K. Hess ◽  
S. Banerjee ◽  
L. Witkowski ◽  
...  
Keyword(s):  
Real Space ◽  
Hot Electron ◽  
Electron Conduction ◽  
Real Space Transfer

Real-space transfer by hot electron resonant tunneling

1993 ◽  
Vol 13 (4) ◽  
pp. 397
Author(s):  
T.K. Higman ◽  
Jihong Chen ◽  
M.S. Hagedorn ◽  
F. Williamson
Keyword(s):  
Resonant Tunneling ◽  
Real Space ◽  
Hot Electron ◽  
Real Space Transfer

scholarly journals DC and AC Characteristics of GaAs/InGaAs/AIGaAS Real Space Transfer Transistors

1998 ◽  
Vol 21 (2) ◽  
pp. 79-85
Author(s):  
H. C. Chen
Keyword(s):  
High Frequency ◽  
Cutoff Frequency ◽  
Differential Resistance ◽  
Negative Resistance ◽  
Real Space ◽  
Current Gain ◽  
Hot Electron ◽  
S Parameter ◽  
First Time ◽  
Real Space Transfer

DC and AC performances of a GaAs/InGaAs/AIGaAs negative resistance field-effect transistor (NERFET) are demonstrated by molecular beam epitaxy (MBE) for the first time. The negative differential resistance (NDR) resulted from the observation of the hot electron real space transfer effect in InGaAs channel. By Hall measurements, the structure shows carrier mobility as high as 4300 (13500) cm2/v-s at 300 (77)K, which is suitable for high frequency operation. For DC performance, the largest peak-to-valley current ratio of the device is about 5 at room temperature. For AC performance, S-parameter measurements of high frequency and microwave characteristics indicate a projected maximum frequency of oscillation offmax⁡=2.7GHzand a current gain cutoff frequency (fT) occurs at 1.8GHz.

Hot-electron real-space transfer and longitudinal transport in dual AlGaN/AlN/{AlGaN/GaN} channels

2015 ◽  
Vol 30 (3) ◽  
pp. 035003 ◽  
Author(s):  
E Šermukšnis ◽  
J Liberis ◽  
A Matulionis ◽  
V Avrutin ◽  
R Ferreyra ◽  
...  
Keyword(s):  
Real Space ◽  
Hot Electron ◽  
Real Space Transfer

Quench of hot-electron real space transfer by electronic screening

1991 ◽  
Vol 38 (11) ◽  
pp. 2417-2422 ◽  
Author(s):  
C.-T. Liu ◽  
S. Luryi ◽  
P.A. Garbinski ◽  
A.Y. Cho ◽  
D.L. Sivco
Keyword(s):  
Real Space ◽  
Hot Electron ◽  
Electronic Screening ◽  
Real Space Transfer

FLUCTUATIONS AND ULTRAFAST PROCESSES IN VOLTAGE-BIASED TWO-DIMENSIONAL CHANNELS

2008 ◽  
Vol 18 (04) ◽  
pp. 923-933 ◽  
Author(s):  
ARVYDAS MATULIONIS
Keyword(s):  
Electron Energy ◽  
Energy Relaxation ◽  
Real Space ◽  
Low Noise ◽  
Hot Electron ◽  
Phonon Modes ◽  
Time Resolved ◽  
Power Transistors ◽  
Phonon Lifetime ◽  
Real Space Transfer

Hot-electron fluctuation techniques were developed for experimental investigation of picosecond and subpicosecond electronic and phononic processes in voltage-biased 2DEG channels of interest for microwave low-noise and high-power transistors. Examples illustrate real-space transfer, hot-electron energy relaxation, and occupancy relaxation of hot-phonon modes. The pioneering results on hot-electron energy relaxation and hot-phonon lifetime are confirmed by time-resolved response experiments. The fluctuation technique for measuring the hot-phonon lifetime as a function of the hot-phonon temperature is unique, no datum has been reported for comparison as yet.

Sign in / Sign up

Export Citation Format

Share Document