Semi-analytical model for charge control in SiGe quantum well MOS structures

1993 ◽  
Vol 36 (7) ◽  
pp. 961-968 ◽  
Author(s):  
Kaushik Bhaumik ◽  
Yosef Shacham-Diamand
2011 ◽  
Vol 403-408 ◽  
pp. 52-58 ◽  
Author(s):  
Md. Rejvi Kaysir ◽  
Rafiqul Islam

In this paper, charge control mechanism and carrier features have been precisely investigated in InxGa1-xN/InN/InxGa1-xN based quantum-well double heterostructure high electron mobility transistors (QW-DHEMTs). A study of charge control in the InxGa1-xN/InN/InxGa1-xN structure is performed by self-consistently solving Schrödinger equation in conjunction with Poisson’s equation taking into account the spontaneous and piezoelectric polarization effects. The potential profile and the distribution of electron density in the channel as a function of gate voltage are investigated here. A large conduction band offset of about 2.2eV is obtained for the proposed device for In content x=0.05, which ensure better carrier confinement and higher sheet charge density. The influence of In composition(x) and doping concentration of InxGa1-xN upper barrier on sheet charge density and carrier distributions in channel is also presented. This analysis provides a platform to investigate the InN based QW-DHEMTs and to optimized their design.


1994 ◽  
Vol 41 (8) ◽  
pp. 1351-1356 ◽  
Author(s):  
Chenhsin Lien ◽  
Yimin Huang ◽  
Hungming Chien ◽  
Wenlong Wang

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