Silicon germanium heterojunction bipolar transistor electrostatic discharge power clamps and the Johnson Limit in RF BICMOS SiGe technology

Steven H Voldman; Brian Ronan; Patrick A Juliano; Alan Botula; David T Hui; Louis D Lanzerotti

doi:10.1016/s0304-3886(02)00064-5

Silicon germanium heterojunction bipolar transistor electrostatic discharge power clamps and the Johnson Limit in RF BICMOS SiGe technology

Journal of Electrostatics ◽

10.1016/s0304-3886(02)00064-5 ◽

2002 ◽

Vol 56 (3) ◽

pp. 341-362 ◽

Cited By ~ 2

Author(s):

Steven H Voldman ◽

Brian Ronan ◽

Patrick A Juliano ◽

Alan Botula ◽

David T Hui ◽

...

Keyword(s):

Silicon Germanium ◽

Electrostatic Discharge ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Discharge Power

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The influence of heavily doped buried layer implants on electrostatic discharge (ESD), latchup, and a silicon germanium heterojunction bipolar transistor in a BiCMOS SiGe technology

2004 IEEE International Reliability Physics Symposium. Proceedings ◽

10.1109/relphy.2004.1315315 ◽

2004 ◽

Cited By ~ 4

Author(s):

S. Voldman ◽

L. Lanzerotti ◽

W. Morris ◽

L. Rubin

Keyword(s):

Silicon Germanium ◽

Electrostatic Discharge ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Heavily Doped ◽

Buried Layer

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Modeling the temperature-dependent Early voltage of a silicon germanium heterojunction bipolar transistor

IEEE Transactions on Electron Devices ◽

10.1109/16.766886 ◽

1999 ◽

Vol 46 (6) ◽

pp. 1207-1211 ◽

Cited By ~ 1

Author(s):

S.A. Wartenberg ◽

C.R. Westgate

Keyword(s):

Silicon Germanium ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Temperature Dependent

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A single-event transient induced by a pulsed laser in a silicon—germanium heterojunction bipolar transistor

Chinese Physics B ◽

10.1088/1674-1056/22/5/056103 ◽

2013 ◽

Vol 22 (5) ◽

pp. 056103 ◽

Cited By ~ 3

Author(s):

Ya-Bin Sun ◽

Jun Fu ◽

Jun Xu ◽

Yu-Dong Wang ◽

Wei Zhou ◽

...

Keyword(s):

Silicon Germanium ◽

Pulsed Laser ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Single Event ◽

Single Event Transient

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Numerical simulation of Silicon-Germanium Heterojunction Bipolar Transistor (HBT) in silvaco/atlas and analysis of HBT base transit time to achieve faster operation

2015 International Conference on Electrical Engineering and Information Communication Technology (ICEEICT) ◽

10.1109/iceeict.2015.7307345 ◽

2015 ◽

Author(s):

Upoma Saha ◽

Fahmi Imteaz ◽

Oishi Prova Saleque ◽

Md. Mehedi Hassan Shohag ◽

Bishwajit Debnath

Keyword(s):

Numerical Simulation ◽

Transit Time ◽

Silicon Germanium ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Silvaco Atlas

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Silicon–germanium (SiGe) heterojunction bipolar transistor (HBT) and bipolar complementary metal oxide semiconductor (BiCMOS) technologies

Silicon–Germanium (SiGe) Nanostructures ◽

10.1533/9780857091420.4.473 ◽

2011 ◽

pp. 473-498

Author(s):

K. Washio

Keyword(s):

Metal Oxide ◽

Silicon Germanium ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Oxide Semiconductor

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Silicon Germanium Heterojunction Bipolar Transistor for Digital Application

TELKOMNIKA (Telecommunication Computing Electronics and Control) ◽

10.12928/telkomnika.v10i3.828 ◽

2012 ◽

Vol 10 (3) ◽

pp. 493

Author(s):

Engelin Shintadewi Julian

Keyword(s):

Silicon Germanium ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor

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Silicon Germanium Heterojunction Bipolar Transistor for Digital Application

TELKOMNIKA Indonesian Journal of Electrical Engineering ◽

10.11591/telkomnika.v10i3.609 ◽

2012 ◽

Vol 10 (3) ◽

Author(s):

Engelin Shintadewi Julian

Keyword(s):

Silicon Germanium ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor

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