Tertiary recrystallization and iron loss of ultra thin silicon steels

1990 ◽  
Vol 26 (5) ◽  
pp. 1969-1971 ◽  
Author(s):  
K.I. Arai ◽  
H. Satoh ◽  
S. Agatsuma ◽  
K. Ishiyama
Keyword(s):  
Iron Loss ◽  
Thin Silicon

Tertiary recrystallization and iron loss of ultra thin silicon steel

1990 ◽  
Author(s):  
K.I. Arai ◽  
H. Satoh ◽  
S. Agatsuma ◽  
K. Ishiyama
Keyword(s):  
Silicon Steel ◽  
Iron Loss ◽  
Thin Silicon

Behavior of contact-silicided TFSOI gate structures

1994 ◽  
Vol 52 ◽  
pp. 860-861
Author(s):  
N. David Theodore ◽  
Juergen Foerstner ◽  
Peter Fejes
Keyword(s):  
Semiconductor Device ◽  
Series Resistance ◽  
Field Effect Transistors ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
Continuous Layer ◽  
Buried Oxide ◽  
Device Structures ◽  
Thin Silicon

As semiconductor device dimensions shrink and packing-densities rise, issues of parasitic capacitance and circuit speed become increasingly important. The use of thin-film silicon-on-insulator (TFSOI) substrates for device fabrication is being explored in order to increase switching speeds. One version of TFSOI being explored for device fabrication is SIMOX (Silicon-separation by Implanted OXygen).A buried oxide layer is created by highdose oxygen implantation into silicon wafers followed by annealing to cause coalescence of oxide regions into a continuous layer. A thin silicon layer remains above the buried oxide (~220 nm Si after additional thinning). Device structures can now be fabricated upon this thin silicon layer.Current fabrication of metal-oxidesemiconductor field-effect transistors (MOSFETs) requires formation of a polysilicon/oxide gate between source and drain regions. Contact to the source/drain and gate regions is typically made by use of TiSi2 layers followedby Al(Cu) metal lines. TiSi2 has a relatively low contact resistance and reduces the series resistance of both source/drain as well as gate regions

Measuring Iron Loss of the Electrical Steel Sheets with Different Grades under Compressive Stress Normal to the Surface

2019 ◽  
Vol 139 (4) ◽  
pp. 190-196
Author(s):  
Shinya Urata ◽  
Yoshitaka Maeda ◽  
Hideo Nakai ◽  
Yuuya Takeuchi ◽  
Kyyoul Yun ◽  
...  
Keyword(s):  
Compressive Stress ◽  
Electrical Steel ◽  
Iron Loss ◽  
Steel Sheets ◽  
Electrical Steel Sheets

High-Carrier-Frequency Iron-Loss Characteristics Excited by GaN FET Single-Phase PWM Inverter

2016 ◽  
Vol 136 (2) ◽  
pp. 110-117 ◽  
Author(s):  
Takahiro Tanaka ◽  
Shoko Koga ◽  
Ryosuke Kogi ◽  
Shunya Odawara ◽  
Keisuke Fujisaki
Keyword(s):  
Carrier Frequency ◽  
Single Phase ◽  
Iron Loss ◽  
Pwm Inverter ◽  
High Carrier ◽  
Gan Fet

Iron Loss Characteristics of Motors Fed by Fast Switching GaN-FET Inverters

2020 ◽  
Vol 140 (6) ◽  
pp. 488-494
Author(s):  
Haruo Naitoh ◽  
Takaya Sugimoto ◽  
Keisuke Fujisaki
Keyword(s):  
Iron Loss ◽  
Fast Switching ◽  
Gan Fet

Lifetime Regime in the Electrically-Detected Transient Grating Method Applied to Amorphous and Microcrystalline Silicon Films

2002 ◽  
Vol 715 ◽  
Author(s):  
P. Sanguino ◽  
M. Niehus ◽  
S. Koynov ◽  
P. Brogueira ◽  
R. Schwarz ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Analytical Calculation ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Dielectric Relaxation Time ◽  
Transient Grating ◽  
Minority Carrier Diffusion Length ◽  
Carrier Recombination ◽  
Thin Silicon ◽  
Good Agreement

AbstractThe minority-carrier diffusion length in thin silicon films can be extracted from the electrically-detected transient grating method, EDTG, by a simple ambipolar analysis only in the case of lifetime dominated carrier transport. If the dielectric relaxation time, τdiel, is larger than the photocarrier response time, τR, then unexpected negative transient signals can appear in the EDTG result. Thin silicon films deposited by hot-wire chemical vapor deposition (HWCVD) near the amorphous-to-microcrystalline transition, where τR varies over a large range, appeared to be ideal candidates to study the interplay between carrier recombination and dielectric response. By modifying the ambipolar description to allow for a time-dependent carrier grating build-up and decay we can obtain a good agreement between analytical calculation and experimental results.

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