ABSTRACTUncooled Infrared detectors with high sensitivity and shorter response times are preferred as through the wall detection device. An alternate approach for making these sensors, being pursued by us is to use the concept of rectenna with tunnel diodes. Successful fabrication of such high frequency switching diodes with antenna as detectors, offer a much faster response time than existing bolometer. This paper presents the fabrication and characterization of thin-film MIM diode for use in rectenna as an Infrared detector. MIM diodes operate on the basis of quantum mechanical phenomenon, i.e., when a sufficiently thin barrier (<5nm) is sandwiched between two electrodes, current can flow between them by means of tunnelling. This tunnelling probability increases with a decrease in the dielectric barrier height and the separation distance. The MIM diodes were fabricated with asymmetric electrodes with 1μm2 contact areas with cut-off frequency ∼0.1THz. The electrodes of the Ni-NiO-Cr MIM diodes have been fabricated through Photolithography, e-beam lithography, followed by conventional lift-off process. The dielectric layer (NiO) was deposited through plasma oxidation to obtain 2nm thin films. The composition and the thickness of the insulator layer are characterized by metrological tools like SEM and Spectroscopic Ellipsometer. The diode characteristics presented in this paper have been found to be stable and reproducible with the established fabrication conditions. Electrical behaviour (I-V) of the MIM junctions were investigated and compared with the theoretical tunnelling characteristics of the Ni-NiO-Cr MIM diodes. For devices with such non-linear electrodes, excellent agreement is obtained between the measured and the calculated result with the forward bias current as 0.8mA at 0.2V and the reverse bias current as −0.2mA at −0.2V.
Analysis of asymmetric property with DC bias current on thin-film magnetoimpedance element