Noise reduction by surface oxidization of a CoCrZr seed layer on glass substrates for CoCrPt/CrTi thin film media

1999 ◽  
Vol 35 (5) ◽  
pp. 2640-2642 ◽  
Author(s):  
Y. Matsuda ◽  
Y. Yahisa ◽  
K. Sakamoto ◽  
Y. Takahashi ◽  
A. Katou ◽  
...  
Keyword(s):  
Thin Film ◽  
Noise Reduction ◽  
Seed Layer ◽  
Glass Substrates ◽  
Surface Oxidization

The Effects of Deposition Time and Seed Layer on Morphological Properties of Zinc Oxide by Chemical Bath Deposition

2017 ◽  
Vol 264 ◽  
pp. 240-243
Author(s):  
Mohd Rashid Yusof Hamid ◽  
Sharifah Bee O.A. Abdul Hamid ◽  
Boon Hoong Ong
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Chemical Bath Deposition ◽  
Seed Layer ◽  
Metal Ion ◽  
Deposition Time ◽  
Morphological Properties ◽  
Metal Ion Binding ◽  
Glass Substrates ◽  
Thin Film Adhesion

In this work, chemical bath deposition (CBD) method is used to form zinc oxide (ZnO) thin film nanostructures. Three types of zinc (Zn) precursors, namely Zn (NO3)2, ZnSO4 and ZnCl2, were used and the deposition time in water bath were controlled for 20, 40 and 60 minutes at 85 °C respectively. The effect of seed layer, by using potassium permanganate (KMnO4) solution, on the formation of zinc oxide (ZnO) thin films on glass substrates has been determined. It was found that the presence of the seed layer promote better adhesion of the films which allows ZnO to form with a higher growth rate on the substrate with only little or no loss by precipitation in the solution. The enhancement of the thin film adhesion is due to the in situ nucleation centres formation of hydrated oxide colloids of Mn (O)OH, acting as metal ion binding centres on the glass substrates surface. Meanwhile, in the absence of a seed layer, only scattered ZnO deposits are formed on substrates. By varying the deposition time, ZnO nanostructures with different length and diameter can be formed.

PREPARATION AND CHARACTERIZATION OF POLYVINYL ALCOHOL THIN FILMS FOR ORGANIC THIN FILM TRANSISTORS AND BIOMEDICAL APPLICATIONS

2018 ◽  
Vol 5 (2) ◽  
pp. 16-18
Author(s):  
Chandar Shekar B ◽  
Ranjit Kumar R ◽  
Dinesh K.P.B ◽  
Sulana Sundar C ◽  
Sunnitha S ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Gravimetric Method ◽  
Dip Coating ◽  
Organic Thin Film Transistors ◽  
Poly Vinyl Alcohol ◽  
Organic Thin Film ◽  
Glass Substrates ◽  
Coating Method

Thin films of poly vinyl alcohol (PVA) were prepared on pre-cleaned glass substrates by Dip Coating Method. FTIR spectrum was used to identify the functional groups present in the prepared films. The vibrational peaks observed at 1260 cm-1 and 851 cm-1 are assigned to C–C stretching and CH rocking of PVA.The characteristic band appearing at 1432 cm-1 is assigned to C–H bend of CH2 of PVA. The thickness of the prepared thin films were measured by using an electronic thickness measuring instrument (Tesatronic-TTD20) and cross checked by gravimetric method. XRD spectra indicated the amorphous nature of the films.Surface morphology of the coated films was studied by scanning electron microscope (SEM). The surface revealed no pits and pin holes on the surface. The observed surface morphology indicated that these films could be used as dielectric layer in organic thin film transistors and as drug delivery system for wound healing.

Transparent piezoelectric thin-film devices: Pb(Zr, Ti)O3 thin films on glass substrates

2021 ◽  
Vol 327 ◽  
pp. 112786
Author(s):  
Kazuki Ueda ◽  
Sang-Hyo Kweon ◽  
Hirotaka Hida ◽  
Yoshiharu Mukouyama ◽  
Isaku Kanno
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Glass Substrates ◽  
Piezoelectric Thin Film ◽  
Thin Film Devices

HgTe Nanocrystal-Based Thin-Film Transistors Fabricated on Glass Substrates

2007 ◽  
Vol 28 (1) ◽  
pp. 42-44 ◽  
Author(s):  
Hyunsuk Kim ◽  
Dong-Won Kim ◽  
Kyoungah Cho ◽  
Sangsig Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Glass Substrates

Fabrication and Photoelectrochemical Characterization of Fe, Co, Ni and Cu-Doped TiO2 Thin Films

2013 ◽  
Vol 764 ◽  
pp. 266-283 ◽  
Author(s):  
Ibram Ganesh ◽  
Rekha Dom ◽  
P.H. Borse ◽  
Ibram Annapoorna ◽  
G. Padmanabham ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Metal Ions ◽  
Band Gap ◽  
Metal Ion ◽  
Band Gap Energy ◽  
Chemical Compositions ◽  
Gap Energy ◽  
Glass Substrates ◽  
Photoelectrochemical Characterization

Different amounts of Fe, Co, Ni and Cu-doped TiO2 thin films were prepared on fluorine doped tin oxide (FTO) coated soda-lime glass substrates by following a conventional sol-gel dip-coating technique followed by heat treatment at 550 and 600°C for 30 min. These thin films were characterized for photo-current, chronoamperometry and band-gap energy values. The chemical compositions of metals-doped TiO2 thin films on FTO glass substrates were confirmed by XPS spectroscopic study. The metal-ions doped TiO2 thin films had a thickness of <200 nm="" optical="" transparency="" of="">80%, band-gap energy of >3.6 eV, and a direct band-to-band energy transition. The photoelectrochemical (PEC) studies revealed that all the metal-ions doped TiO2 thin films exhibit n-type semi-conducting behavior with a quite stable chronoamperometry and photo-currents that increase with the increase of applied voltage but decrease with the dopant metal-ion concentration in the thin film. Furthermore, these thin films exhibited flat-band potentials amenable to water oxidation reaction in a PEC cell. The 0.5 wt.% Cu-doped TiO2 thin film electrode exhibited an highest incident photon-to-current conversion efficiency (IPCE) of about 21%.

High-haze and wide-spectrum hydrogenated MGZO TCO films on micro-textured glass substrates for thin-film solar cells

2015 ◽  
Vol 138 ◽  
pp. 41-50 ◽  
Author(s):  
Jie-ming Liu ◽  
Xin-liang Chen ◽  
Jia Fang ◽  
Ying Zhao ◽  
Xiao-dan Zhang
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Wide Spectrum ◽  
Thin Film Solar Cells ◽  
Glass Substrates

Reliability and stability of thin-film amorphous silicon MEMS on glass substrates

2011 ◽  
Vol 1299 ◽  
Author(s):  
P. M. Sousa ◽  
V. Chu ◽  
J. P. Conde
Keyword(s):  
Thin Film ◽  
Resonance Frequency ◽  
Frequency Shift ◽  
Amorphous Silicon ◽  
Structural Damage ◽  
Chemical Vapor ◽  
Stability Study ◽  
Glass Substrates ◽  
Resonance Frequency Shift ◽  
Mems Resonators

ABSTRACTIn this work, we present a reliability and stability study of doped hydrogenated amorphous silicon (n+-a-Si:H) thin-film silicon MEMS resonators. The n+-a-Si:H structural material was deposited using radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) and processed using surface micromachining at a maximum deposition temperature of 110 ºC. n+-a-Si:H resonant bridges can withstand the industry standard of 1011 cycles at high load with no structural damage. Tests performed up to 3x1011 cycles showed a negligible level of degradation in Q during the entire cycling period which in addition shows the high stability of the resonator. In measurements both in vacuum and in air a resonance frequency shift which is proportional to the number of cycles is established. This shift is between 0.1 and 0.4%/1x1011 cycles depending on the applied VDC. When following the resonance frequency in vacuum during cyclic loading, desorption of air molecules from the resonator surface is responsible for an initial higher resonance frequency shift before the linear dependence is established.

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