The Effects of Deposition Time and Seed Layer on Morphological Properties of Zinc Oxide by Chemical Bath Deposition

2017 ◽  
Vol 264 ◽  
pp. 240-243
Author(s):  
Mohd Rashid Yusof Hamid ◽  
Sharifah Bee O.A. Abdul Hamid ◽  
Boon Hoong Ong
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Chemical Bath Deposition ◽  
Seed Layer ◽  
Metal Ion ◽  
Deposition Time ◽  
Morphological Properties ◽  
Metal Ion Binding ◽  
Glass Substrates ◽  
Thin Film Adhesion

In this work, chemical bath deposition (CBD) method is used to form zinc oxide (ZnO) thin film nanostructures. Three types of zinc (Zn) precursors, namely Zn (NO3)2, ZnSO4 and ZnCl2, were used and the deposition time in water bath were controlled for 20, 40 and 60 minutes at 85 °C respectively. The effect of seed layer, by using potassium permanganate (KMnO4) solution, on the formation of zinc oxide (ZnO) thin films on glass substrates has been determined. It was found that the presence of the seed layer promote better adhesion of the films which allows ZnO to form with a higher growth rate on the substrate with only little or no loss by precipitation in the solution. The enhancement of the thin film adhesion is due to the in situ nucleation centres formation of hydrated oxide colloids of Mn (O)OH, acting as metal ion binding centres on the glass substrates surface. Meanwhile, in the absence of a seed layer, only scattered ZnO deposits are formed on substrates. By varying the deposition time, ZnO nanostructures with different length and diameter can be formed.

Characteristics of Zinc Oxide Film Prepared by Chemical Bath Deposition Method

2014 ◽  
Vol 602-603 ◽  
pp. 871-875
Author(s):  
Yen Pei Fu ◽  
Jian Jhih Chen
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Chemical Bath Deposition ◽  
Deposition Time ◽  
Oxide Films ◽  
Hexagonal Structure ◽  
Zno Films ◽  
Zinc Oxide Film ◽  
Incident Wavelength ◽  
Zinc Oxide Films

In this study, ZnO films, prepared by Chemical Bath Deposition (CBD), are applied as the conductive layers for thin film solar cells. Zinc acetate is used as a source of zinc, and different proportions of ammonia solution are added and well mixed. The growth of zinc oxide films in reaction solutions is taken place at 80°C and then heated to 500°C for one hour. In this study, the different ammonia concentrations and deposition times is controlled. The thin film structure is Hexagonal structure, which is determined by X-ray diffraction spectrometer (XRD) analysis. Scanning electron microscopy (SEM) is used as the observation of surface morphology, the bottom of the film is the interface where the heterogeneous nucleation happens. With the increase of deposition time, there were a few attached zinc oxide particles, which is formed by homogeneous nucleation. According to UV / visible light (UV / Vis) absorption spectrometer transmittance measurements and the relationship between/among the incident wavelength, it can be converted to the energy gaps (Eg), which are about 3.0 to 3.2eV, by using fluorescence spectroscopy analysis. The emission of zinc oxide films has two wavelengths which are located on 510nm and 570nm. According to Based on the all analytic results, the ammonia concentration at 0.05M, and the deposition time is 120 minutes, would obtain the conditions of ZnO films which is more suitable for applications of conductive layer material in thin film solar cell.

scholarly journals Deposition time and annealing effects on morphological and optical properties of ZnS thin films prepared by chemical bath deposition

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
N. Chabou ◽  
B. Birouk ◽  
M.S. Aida ◽  
J.P. Raskin
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Chemical Bath Deposition ◽  
Deposition Time ◽  
Ammonium Hydroxide ◽  
Morphological Properties ◽  
Complexing Agent ◽  
Glass Substrates ◽  
Vis Spectroscopy ◽  
Annealing Effects

AbstractNanocrystalline zinc sulfide (ZnS) thin films are prepared on glass substrates by chemical bath deposition (CBD) method using aqueous solutions of zinc chloride, thiourea ammonium hydroxide along with non-toxic complexing agent tri-sodium citrate in alkaline medium at 80 °C. The deposition time and annealing effects on the optical and morphological properties are studied. The morphological, compositional, and optical properties of the films are investigated by scanning electron microscopy (SEM), X-ray energy dispersive spectroscopy (EDAX) and UV-Vis spectroscopy. SEM micrographs exhibit uniform surface coverage. UV-Vis (300 nm to 800 nm) spectrophotometric measurements show transparency of the films (transmittance ranging from 69 % to 81 %), with a direct allowed energy band gap in the range of 3.87 eV to 4.03 eV. After thermal annealing at 500 °C for 120 min, the transmittance increases up to 87 %.

Fabrication and Photoelectrochemical Characterization of Fe, Co, Ni and Cu-Doped TiO2 Thin Films

2013 ◽  
Vol 764 ◽  
pp. 266-283 ◽  
Author(s):  
Ibram Ganesh ◽  
Rekha Dom ◽  
P.H. Borse ◽  
Ibram Annapoorna ◽  
G. Padmanabham ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Metal Ions ◽  
Band Gap ◽  
Metal Ion ◽  
Band Gap Energy ◽  
Chemical Compositions ◽  
Gap Energy ◽  
Glass Substrates ◽  
Photoelectrochemical Characterization

Different amounts of Fe, Co, Ni and Cu-doped TiO2 thin films were prepared on fluorine doped tin oxide (FTO) coated soda-lime glass substrates by following a conventional sol-gel dip-coating technique followed by heat treatment at 550 and 600°C for 30 min. These thin films were characterized for photo-current, chronoamperometry and band-gap energy values. The chemical compositions of metals-doped TiO2 thin films on FTO glass substrates were confirmed by XPS spectroscopic study. The metal-ions doped TiO2 thin films had a thickness of <200 nm="" optical="" transparency="" of="">80%, band-gap energy of >3.6 eV, and a direct band-to-band energy transition. The photoelectrochemical (PEC) studies revealed that all the metal-ions doped TiO2 thin films exhibit n-type semi-conducting behavior with a quite stable chronoamperometry and photo-currents that increase with the increase of applied voltage but decrease with the dopant metal-ion concentration in the thin film. Furthermore, these thin films exhibited flat-band potentials amenable to water oxidation reaction in a PEC cell. The 0.5 wt.% Cu-doped TiO2 thin film electrode exhibited an highest incident photon-to-current conversion efficiency (IPCE) of about 21%.

Absorber Films of Ag2S and AgBiS2 prepared by Chemical Bath Deposition

2002 ◽  
Vol 730 ◽  
Author(s):  
A. Nuñez Rodriguez ◽  
M.T.S. Nair ◽  
P.K. Nair
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Silver Nitrate ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Optical Band Gap ◽  
Sodium Thiosulfate ◽  
Xrd Pattern ◽  
Glass Substrates

AbstractAg2S thin films of 90 nm to 300 nm in thickness were deposited at 70°C on glass substrates immersed in a bath mixture containing silver nitrate, sodium thiosulfate and dimethylthiourea. When the films are heated in nitrogen at temperatures 200°C to 400°C, crystallinity is improved and XRD pattern similar to that of acanthite is observed. These films possess electrical conductivity of 10-3 (ohm cm)-1, are photoconductive and exhibit an optical band gap of 1.36 eV. When Ag2S thin film is deposited over a thin film of Bi2S3, also obtained by chemical bath deposition from bismuth nitrate, triethanolamine and thioacetamide, and heated at 300°C to 400°C in nitrogen, a ternary compound, AgBiS2 is formed. This material has an electrical conductivity of 5x10-5 (ohm cm)-1, is photoconductive and possesses optical band gap 0.95 eV.

Performance of Ultraviolet Photoconductive Sensor Based on Aluminium-Doped Zinc Oxide Nanorod-Nanoflake Network Thin Film Using Aluminium Contacts

2013 ◽  
Vol 832 ◽  
pp. 298-302 ◽  
Author(s):  
M.H. Mamat ◽  
Nor Diyana Md Sin ◽  
I. Saurdi ◽  
N.N. Hafizah ◽  
Mohd Firdaus Malek ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Seed Layer ◽  
Uv Light ◽  
Sol Gel ◽  
Zno Nanorod ◽  
Immersion Method ◽  
Coated Glass Substrate ◽  
Sensor Applications ◽  
Doped Zno

In this research, we fabricated UV photoconductive sensor using aluminium (Al)-doped ZnO nanorod-nanoflake network thin film. These nanostructures were deposited on the seed-layer-coated glass substrate using sonicated sol-gel immersion method. By using Al contacts, it was found that the performance of the UV photoconductive sensor is very good. The responsivity of the device was 46.4 mA/W with sensitivity of 17.5 under 365-nm UV light (5 mW/cm2) at bias voltage of 10 V. Our study revealed that these nanostructures are very promising material for the UV photoconductive sensor applications.

Characterization of MnS Thin Films Deposited by Chemical Bath Deposition

2019 ◽  
Vol 969 ◽  
pp. 433-438 ◽  
Author(s):  
Dattatraya K. Sonavane ◽  
S.K. Jare ◽  
M.A. Shaikh ◽  
R.V. Kathare ◽  
R.N. Bulakhe
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Band Gap Energy ◽  
Sulfur Source ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Double Beam

Glass substrates are used to deposit thin films utilizing basic and value effective chemical bath deposition (CBD) technique. The films were prepared from the mixture as solutions of manganous acetate tetrahydrate [C4H6MnO44H2O] as a manganese source, thiourea [(H2 N) 2 CS] as a sulfur source and triethanolamine (TEA) [(HOC2H4)3N] as a complexing agent.In the present paper the deposition was successfully done at 60 °C temperature. The absorption properties and band gap energy were determined employing double beam spectrophotometer. The optical band gap value calculated from absorption spectra of MnS thin film is found to be about 3.1eV.The MnS thin film was structurally characterized by X-ray Diffraction (XRD). The MnS thin film was morphologically characterized by Scanning Electron Microscopy (SEM) and elemental analysis was performed using EDS to confirm the formation of MnS.

Flexible Electronics Based on InGaZnO Transparent Thin Film Transistors

2012 ◽  
Vol 521 ◽  
pp. 141-151
Author(s):  
Stephen J. Pearton ◽  
Wan Tae Lim ◽  
Erica Douglas ◽  
Hyun Cho ◽  
F. Ren
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Light Emitting Diode ◽  
Light Sensitivity ◽  
Processing Temperature ◽  
Wearable Electronics ◽  
Glass Substrates ◽  
Indium Gallium

There is increasing interest in use of conducting oxide materials in new forms of transparent, flexible or wearable electronics on cheap substrates, including paper. While Si-based thin film transistors (TFTs) are widely used in displays, there are some drawbacks such as light sensitivity and light degradation and low field effect mobility (<1 cm2/Vs). For example, virtually all liquid crystal displays (LCDs) use TFTs imbedded in the panel itself. One of the promising alternatives to use of Si TFTs involves amorphous or nanocrystalline n-type oxide semiconductors. There have been promising results with zinc oxide, indium gallium oxide and zinc tin oxide channels. In this paper, recent progress in these new materials for TFTs on substrates such as paper is reviewed. In addition, InGaZnO transistor arrays show promise for driving laminar electroluminescent, organic light-emitting diode (OLED) and LCD displays. These transistors may potentially operate at up to an order of magnitude faster than Si TFTs. We have fabricated bottomgate amorphous (α-) indium-gallium-zinc-oxide (InGaZnO4) thin film transistors (TFTs) on both paper and glass substrates at low processing temperature (≤100°C). As a water and solvent barrier layer, cyclotene (BCB 3022-35 from Dow Chemical) was spin-coated on the entire paper substrate. TFTs on the paper substrates exhibited saturation mobility (μsat) of 1.2 cm2.V-1.s-1, threshold voltage (VTH) of 1.9V, subthreshold gate-voltage swing (S) of 0.65V.decade-1, and drain current onto- off ratio (ION/IOFFSubscript text) of ~104. These values were only slightly inferior to those obtained from devices on glass substrates (μsat~2.1 cm2.V-1.s-1, VTH ~0 V, S~0.74 V.decade-1, and ION/IOFF=105- 106). The uneven surface of the paper sheet led to relatively poor contact resistance between source-drain electrodes and channel layer. Future areas for development are identified.

scholarly journals Effects of Deposition Time on the Chemical Bath-deposited CuS Thin Films

1970 ◽  
Vol 25 ◽  
pp. 2-8 ◽  
Author(s):  
K Anuar ◽  
W. T. Tan ◽  
N. Saravanan ◽  
L. K. Khor ◽  
S. M. Ho
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Indium Tin Oxide ◽  
Deposition Time ◽  
Sodium Thiosulfate ◽  
Deposition Process ◽  
Chemical Society ◽  
Band Gap Energy ◽  
Oxide Glass ◽  
Glass Substrates

The chemical bath deposition technique was used to deposit thin films of coppersulphide onto indium tin oxide glass substrates. The bath composition included copperchloride which was the source of Cu2+ and sodium thiosulfate which supplied the S2- ions. Xraydiffraction and atomic force microscopy were used to investigate structural andmorphological characterization, respectively. The influence of deposition time was studiedto determine the optimum condition for deposition process. The deposited CuS films showedhexagonal structure. The number of peaks attributable to CuS increased as the depositiontime was increased to 16 hours based on XRD data. AFM images revealed that the chemicalbath-deposited films for 16 hours showed more homogeneous and uniform compared withother deposition times, and the highest absorbance value was obtained for the filmsdeposited at this period. The band gap energy decreased from 2.9 to 2.45 eV when thedeposition time was increased from 8 to 20 hours.Keywords: Chemical bath deposition, copper sulphide, thin films, solar cells.DOI: 10.3126/jncs.v25i0.3276Journal of Nepal Chemical Society Volume 25, 2010 pp 2-8

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