Total dose effects on the shallow-trench isolation leakage current characteristics in a 0.35 μm SiGe BiCMOS technology

1999 ◽  
Vol 46 (6) ◽  
pp. 1841-1847 ◽  
Author(s):  
Guofu Niu ◽  
S.J. Mathew ◽  
G. Banerjee ◽  
J.D. Cressler ◽  
S.D. Clark ◽  
...  
Keyword(s):  
Total Dose ◽  
Leakage Current ◽  
Shallow Trench Isolation ◽  
Bicmos Technology ◽  
Trench Isolation ◽  
Dose Effects ◽  
Sige Bicmos ◽  
Total Dose Effects ◽  
Current Characteristics

Total Dose Effects in CMOS Trench Isolation Regions

2009 ◽  
Vol 56 (4) ◽  
pp. 1941-1949 ◽  
Author(s):  
A. H. Johnston ◽  
R. T. Swimm ◽  
G. R. Allen ◽  
T. F. Miyahira
Keyword(s):  
Total Dose ◽  
Trench Isolation ◽  
Dose Effects ◽  
Total Dose Effects

Effect of Liner Oxide Densification on Stress-Induced Leakage Current Characteristics in Shallow Trench Isolation Processing

2003 ◽  
Vol 150 (7) ◽  
pp. G359 ◽  
Author(s):  
Jeong Hwan Park ◽  
Seung-Woo Shin ◽  
Sang-Wook Park ◽  
Young-Taek Kong ◽  
Dong-Jin Kim ◽  
...  
Keyword(s):  
Leakage Current ◽  
Shallow Trench Isolation ◽  
Trench Isolation ◽  
Stress Induced Leakage Current ◽  
Current Characteristics

scholarly journals Total Dose Effects on 4H-SiC Bipolar Junction Transistors

2017 ◽  
Vol 897 ◽  
pp. 579-582
Author(s):  
Sethu Saveda Suvanam ◽  
Luigia Lanni ◽  
Bengt Gunnar Malm ◽  
Carl Mikael Zetterling ◽  
Anders Hallén
Keyword(s):  
Total Dose ◽  
Detailed Analysis ◽  
Surface Recombination ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Displacement Damage ◽  
Base Current ◽  
Dose Effects ◽  
Order Of Magnitude ◽  
Total Dose Effects

In this work, total dose effects on 4H-SiC bipolar junction transistors (BJT) are investigated. Three 4H-SiC NPN BJT chips are irradiated with 3MeV protons with a dose of 1×1011, 1×1012 and 1×1013 cm-2, respectively. From the measured reciprocal current gain it is observed that 4H-SiC NPN BJT exposed to protons suffer both displacement damage and ionization, whereas, a traditional Si BJT suffers mainly from displacement damage. Furthermore, bulk damage introduction rates for SiC BJT were extracted to be 3.3×10-15 cm2, which is an order of magnitude lower compared to reported Si values. Finally, from detailed analysis of the base current at low injection levels, it is possible to distinguish when surface recombination leakage is dominant over bulk recombination.

Total Dose and Transient Response of SiGe HBTs from a New 4th-Generation, 90 nm SiGe BiCMOS Technology

2012 ◽  
Author(s):  
Nelson E. Lourenco ◽  
Robert L. Schmid ◽  
Kurt A. Moen ◽  
Stanley D. Phillips ◽  
Troy D. England ◽  
...  
Keyword(s):  
Total Dose ◽  
Transient Response ◽  
Bicmos Technology ◽  
Sige Bicmos

Total Dose Effects in the 54HC Family of Microcircuits

1984 ◽  
Vol 31 (6) ◽  
pp. 1358-1363 ◽  
Author(s):  
Stan Ropiak ◽  
Kusum Sahu ◽  
Dave Cleveland
Keyword(s):  
Total Dose ◽  
Dose Effects ◽  
Total Dose Effects

(Invited) Total Dose Effects and Single Event Upsets During Radiation Damage of GaN and SiC

2021 ◽  
Vol 104 (7) ◽  
pp. 13-34
Author(s):  
Ani Khachatrian ◽  
Adrian Ildefonso ◽  
Zahabul Islam ◽  
Md Abu Jafar Rasel ◽  
Amanul Haque ◽  
...  
Keyword(s):  
Total Dose ◽  
Radiation Damage ◽  
Single Event ◽  
Single Event Upsets ◽  
Dose Effects ◽  
Total Dose Effects

Total dose effects on the matching properties of deep submicron MOS transistors

2014 ◽  
Vol 35 (6) ◽  
pp. 064007 ◽  
Author(s):  
Yuxin Wang ◽  
Rongbin Hu ◽  
Ruzhang Li ◽  
Guangbing Chen ◽  
Dongbing Fu ◽  
...  
Keyword(s):  
Total Dose ◽  
Deep Submicron ◽  
Mos Transistors ◽  
Dose Effects ◽  
Total Dose Effects

Total dose effects in the auger transistor

2002 ◽  
Author(s):  
Dmitry V. Gromov ◽  
Vadim V. Elesin ◽  
Aledxander Y. Nikiforov ◽  
Stanislav A. Polevich ◽  
Yury F. Adamov ◽  
...  
Keyword(s):  
Total Dose ◽  
Dose Effects ◽  
Total Dose Effects
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