Growth and characterization of high yield, reliable, high-power, high-speed, InP/InGaAsP capped mesa buried heterostructure distributed feedback (CMBH-DFB) lasers

1989 ◽  
Vol 25 (10) ◽  
pp. 2091-2095 ◽  
Author(s):  
J.L. Zilko ◽  
L.J.P. Ketelsen ◽  
Y. Twu ◽  
D.P. Wilt ◽  
S.G. Napoltz ◽  
...  
Keyword(s):  
High Power ◽  
High Speed ◽  
Distributed Feedback ◽  
High Yield ◽  
Buried Heterostructure

High-power InAlAs/InGaAs Schottky barrier photodiodes for analog microwave signal transmission

2022 ◽  
Vol 43 (1) ◽  
pp. 012302
Author(s):  
K. S. Zhuravlev ◽  
A. L. Chizh ◽  
K. B. Mikitchuk ◽  
A. M. Gilinsky ◽  
I. B. Chistokhin ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Transmission Lines ◽  
High Power ◽  
High Speed ◽  
Signal Transmission ◽  
Mesa Structure ◽  
Microwave Characterization ◽  
Absorbing Layer ◽  
Analog Transmission

Abstract The design, manufacturing and DC and microwave characterization of high-power Schottky barrier InAlAs/InGaAs back-illuminated mesa structure photodiodes are presented. The photodiodes with 10 and 15 μm mesa diameters operate at ≥40 and 28 GHz, respectively, have the output RF power as high as 58 mW at a frequency of 20 GHz, the DC responsivity of up to 1.08 A/W depending on the absorbing layer thickness, and a photodiode dark current as low as 0.04 nA. We show that these photodiodes provide an advantage in the amplitude-to-phase conversion factor which makes them suitable for use in high-speed analog transmission lines with stringent requirements for phase noise.

High‐power, high‐speed 1.3‐μm semi‐insulating‐blocked distributed‐feedback lasers

1988 ◽  
Vol 64 (9) ◽  
pp. 4785-4787 ◽  
Author(s):  
U. Koren ◽  
T. L. Koch ◽  
P. J. Corvini ◽  
B. I. Miller ◽  
G. Eisenstein ◽  
...  
Keyword(s):  
High Power ◽  
High Speed ◽  
Distributed Feedback ◽  
Distributed Feedback Lasers
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