Experimental evaluation of separate contributions to ideality factor for the base surface recombination current in heterojunction bipolar transistors

1994 ◽  
Vol 28 (1-3) ◽  
pp. 238-241
Author(s):  
S.R.D. Kalingamudali ◽  
A.C. Wismayer ◽  
R.C. Woods
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Ideality Factor ◽  
Experimental Evaluation ◽  
Surface Recombination ◽  
Bipolar Transistors ◽  
Base Surface ◽  
Recombination Current

Extrinsic Base Surface Recombination Current in Surface-Passivated InGaP/GaAs Heterojunction Bipolar Transistors

1993 ◽  
Vol 32 (Part 2, No. 10B) ◽  
pp. L1500-L1502 ◽  
Author(s):  
Hiroshi Ito ◽  
Osaake Nakajima ◽  
Koichi Nagata ◽  
Takashi Makimura ◽  
Tadao Ishibashi
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Surface Recombination ◽  
Bipolar Transistors ◽  
Base Surface ◽  
Recombination Current ◽  
Extrinsic Base

Observation of the Surface Recombination Current with an Ideality Factor of Unity in AlGaAs/GaAs Heterojunction Bipolar Transistors

1991 ◽  
Vol 30 (Part 2, No. 2B) ◽  
pp. L266-L268 ◽  
Author(s):  
Kazuhiro Mochizuki ◽  
Hiroshi Masuda ◽  
Masahiko Kawata ◽  
Katsuhiko Mitani ◽  
Chuushiro Kusano
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Ideality Factor ◽  
Surface Recombination ◽  
Bipolar Transistors ◽  
Recombination Current
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