Optimization of accurate estimation of single diode solar photovoltaic parameters and extraction of maximum power point under different conditions

Introduction. With the snowballing requirement of renewable resources of energy, solar energy has been an area of key concern to the increasing demand for electricity. Solar photovoltaic has gotten a considerable amount of consideration from researchers in recent years. Purpose. For generating nearly realistic curves for the solar cell model it is needed to estimate unknown parameters with utmost precision. The five unknown parameters include diode-ideality factor, shunt-resistance, photon-current, diode dark saturation current, and series-resistance. Novelty. The proposed research method hybridizes flower pollination algorithm with least square method to better estimate the unknown parameters, and produce more realistic curves. Methodology. The proposed method shows many promising results that are more realistic in nature, as compared to other methods. Shunt-resistance and series-resistance are considered and diode constant is not neglected in this approach that previously has been in practice. The values of series-resistance and diode-ideality factor are found using flower pollination algorithm while shunt-resistance, diode dark saturation current and photon-current are found through least square method. Results. The combination of these techniques has achieved better results compared to other techniques. The simulation studies are carried on MATLAB/Simulink.

Estimasi Parameter Modul Surya 190 Wp Menggunakan Metode Newton Raphson

Tulisan ini menyajikan hasil penelitian tentang estimasi parameter modul surya tipe BLD180-72M dengan daya puncak 190 Wp menggunakan metode Newton Raphson. Dalam penelitian ini digunakan model rangkaian ekuivalen sel surya model satu diode. Parameter yang diestimasi adalah arus foton (photocurrent), resistansi seri dan resistansi paralel dari modul. Dua parameter lainnya, yaitu arus balik saturasi diode (diode reverse saturation current) dan faktor keidealan diode (diode ideality factor) tidak diestimasi tetapi diasumsikan memiliki nilai tertentu. Dalam penelitian ini, estimasi parameter , da berhasil dilakukan dan hasilnya konvergen, yaitu arus foton 6.7211A, resistansi seri 0.2135 Ω dan resistansi paralel sebesar 26.438 Ω. Pada penelitian ini, diberikan juga nilai ketiga parameter yang disebutkan untuk temperatur kerja modul 48 0C untuk bebagai tingkat penyinaran matahari. Berdasarkan kurva daya keluaran versus tegangan dari modul surya yang diteliti, diperoleh hasil bahwa untuk iradiasi matahari sebesar 600 W/m2, daya yang dihasilkan modul maksimum sekitar 70 W, dan untuk iradiasi matahari sebesar 700 W/m2 daya keluaran maksimumnya sekitar 102 W, dan untuk iradiasi matahari 1000 W/m2,, modul surya tipe BLD180-72M menghasilkan daya keluaran puncak sekitar 198 W

A New Simplified Five-Parameter Estimation Method for Single-Diode Model of Photovoltaic Panels

This work proposes a new simplified five-parameter estimation method for a single-diode model of photovoltaic panels. The method, based on an iterative algorithm, is able to estimate the parameter of the electrical single-diode model from the panel’s datasheet. Two iterative steps are used to estimate the five parameters starting from data provided by the manufacturer (nameplate values or I–V curves). The first step permits finding the optimal value of the diode ideality factor A, and the second step allows the calculation of the Rp value to improve the accuracy. A model that takes into account variations in temperature and solar irradiance has been used to validate the behavior of the output parameters. Compared to other estimation work, the proposed method shows the best result in the standard test condition (STC) and with a variable solar irradiance. Indeed, the optimization of the A, Rs, and Rp parameters allows guaranteeing the minimum error between I–V curves obtained from method and datasheet.

Influence of Ge Incorporation from GeSe2 Vapor on the Properties of Cu2ZnSn(S,Se)4 Material and Solar Cells

Cu2ZnSn(S,Se)4 (CZTSSe) and Cu2Zn(Sn,Ge)(S,Se)4 (CZTGSSe) thin films were prepared based on a non-vacuum solution method. The CZTSSe films were obtained by annealing the solution-deposited precursor films with Se, while the CZTGSSe films were obtained by annealing the similar precursor films with Se and GeSe2. We found that Ge could be incorporated into the annealed films when GeSe2 was present during the annealing process. The Ge incorporation obviously enlarged the sizes of the crystalline grains in the annealed films. However, the energy dispersive spectrometry (EDS) measurements revealed that the element distribution was not uniform in the CZTGSSe films. We fabricated solar cells based on the CZTSSe and CZTGSSe films. It was found the Ge incorporation decreases the Eu energy of the absorber material. The solar cell efficiency was increased from 5.61% (CZTSSe solar cell) to 7.14% (CZTGSSe solar cell) by the Ge incorporation. Compared to CZTSSe solar cells, the CZTGSSe solar cells exhibited a lower diode ideality factor and lower reverse saturation current density.