High-speed optical response of pseudomorphic InGaAs high electron mobility transistors

1992 ◽  
Vol 4 (9) ◽  
pp. 1012-1014 ◽  
Author(s):  
M.Z. Martin ◽  
F.K. Oshita ◽  
M. Matloubian ◽  
H.R. Fetterman ◽  
L. Shaw ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Speed ◽  
High Electron Mobility Transistors ◽  
Optical Response ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

InAlAs/InAs/InGaAs pseudomorphic high electron mobility transistors exhibiting ultra-fast optical response

2009 ◽  
Vol 6 (6) ◽  
pp. 1386-1389 ◽  
Author(s):  
Hirohisa Taguchi ◽  
Nobuhito Wakimura ◽  
Yugo Nakagawa ◽  
Tsutomu Iida ◽  
Yoshifumi Takanashi
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Optical Response ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

High-speed frequency dividers using GaAs/GaAlAs high-electron-mobility transistors

1984 ◽  
Vol 20 (5) ◽  
pp. 217 ◽  
Author(s):  
C.P. Lee ◽  
S.J. Lee ◽  
D. Hou ◽  
D.L. Miller ◽  
R.J. Anderson ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Speed ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Frequency Dividers

scholarly journals High speed terahertz modulation from metamaterials with embedded high electron mobility transistors

2011 ◽  
Vol 19 (10) ◽  
pp. 9968 ◽  
Author(s):  
David Shrekenhamer ◽  
Saroj Rout ◽  
Andrew C. Strikwerda ◽  
Chris Bingham ◽  
Richard D. Averitt ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Speed ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Ultrafast Optical Response of InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors

2010 ◽  
Vol 49 (4) ◽  
pp. 04DF03 ◽  
Author(s):  
Hirohisa Taguchi ◽  
Yasuyuki Oishi ◽  
Takahisa Ando ◽  
Kazuya Uchimura ◽  
Miho Mochiduki ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Optical Response ◽  
High Electron ◽  
High Electron Mobility ◽  
Ultrafast Optical ◽  
Electron Mobility Transistors

Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency

2002 ◽  
Vol 41 (Part 2, No. 4B) ◽  
pp. L437-L439 ◽  
Author(s):  
Keisuke Shinohara ◽  
Yoshimi Yamashita ◽  
Akira Endoh ◽  
Kohki Hikosaka ◽  
Toshiaki Matsui ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Speed ◽  
Cutoff Frequency ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Lattice Matched
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