Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency

2002 ◽  
Vol 41 (Part 2, No. 4B) ◽  
pp. L437-L439 ◽  
Author(s):  
Keisuke Shinohara ◽  
Yoshimi Yamashita ◽  
Akira Endoh ◽  
Kohki Hikosaka ◽  
Toshiaki Matsui ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Speed ◽  
Cutoff Frequency ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Lattice Matched

30-nm-Gate InP-Based Lattice-Matched High Electron Mobility Transistors with 350 GHz Cutoff Frequency

1999 ◽  
Vol 38 (Part 2, No. 2B) ◽  
pp. L154-L156 ◽  
Author(s):  
Tetsuya Suemitsu ◽  
Tetsuyoshi Ishii ◽  
Haruki Yokoyama ◽  
Takatomo Enoki ◽  
Yasunobu Ishii ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Cutoff Frequency ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Lattice Matched

High-speed optical response of pseudomorphic InGaAs high electron mobility transistors

1992 ◽  
Vol 4 (9) ◽  
pp. 1012-1014 ◽  
Author(s):  
M.Z. Martin ◽  
F.K. Oshita ◽  
M. Matloubian ◽  
H.R. Fetterman ◽  
L. Shaw ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Speed ◽  
High Electron Mobility Transistors ◽  
Optical Response ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

High-speed frequency dividers using GaAs/GaAlAs high-electron-mobility transistors

1984 ◽  
Vol 20 (5) ◽  
pp. 217 ◽  
Author(s):  
C.P. Lee ◽  
S.J. Lee ◽  
D. Hou ◽  
D.L. Miller ◽  
R.J. Anderson ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Speed ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Frequency Dividers

scholarly journals Microstructural Characterization of Closely-Lattice-Matched AlIn(Ga)N Alloys for High Electron Mobility Transistors

2011 ◽  
Vol 17 (S2) ◽  
pp. 1354-1355
Author(s):  
L Zhou ◽  
L Kirste ◽  
T Lim ◽  
R Aidam ◽  
O Ambacher ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Microstructural Characterization ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Lattice Matched

Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.

Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz

2013 ◽  
Vol 52 (8S) ◽  
pp. 08JN14 ◽  
Author(s):  
Yuanzheng Yue ◽  
Zongyang Hu ◽  
Jia Guo ◽  
Berardi Sensale-Rodriguez ◽  
Guowang Li ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Cutoff Frequency ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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