Single-mode AlGaAs-GaAs lasers using lateral confinement by native-oxide layers

1998 ◽  
Vol 10 (4) ◽  
pp. 498-500 ◽  
Author(s):  
J. Heerlein ◽  
M. Grabherr ◽  
R. Jager ◽  
P. Unger
Keyword(s):  
Single Mode ◽  
Native Oxide ◽  
Oxide Layers ◽  
Lateral Confinement

scholarly journals Surface Oxidation of Nano-Silicon as a Method for Cycle Life Enhancement of Li-ion Active Materials

Molecules ◽  
2020 ◽  
Vol 25 (18) ◽  
pp. 4093
Author(s):  
Maciej Ratynski ◽  
Bartosz Hamankiewicz ◽  
Dominika A. Buchberger ◽  
Andrzej Czerwinski
Keyword(s):  
Oxide Layer ◽  
Silicon Nanoparticles ◽  
Specific Capacity ◽  
Single Step ◽  
Native Oxide ◽  
Electrochemical Characteristics ◽  
Active Materials ◽  
Silicon Oxide Layer ◽  
Oxide Layers ◽  
Li Ion

Among the many studied Li-ion active materials, silicon presents the highest specific capacity, however it suffers from a great volume change during lithiation. In this work, we present two methods for the chemical modification of silicon nanoparticles. Both methods change the materials’ electrochemical characteristics. The combined XPS and SEM results show that the properties of the generated silicon oxide layer depend on the modification procedure employed. Electrochemical characterization reveals that the formed oxide layers show different susceptibility to electro-reduction during the first lithiation. The single step oxidation procedure resulted in a thin and very stable oxide that acts as an artificial SEI layer during electrode operation. The removal of the native oxide prior to further reactions resulted in a very thick oxide layer formation. The created oxide layers (both thin and thick) greatly suppress the effect of silicon volume changes, which significantly reduces electrode degradation during cycling. Both modification techniques are relatively straightforward and scalable to an industrial level. The proposed modified materials reveal great applicability prospects in next generation Li-ion batteries due to their high specific capacity and remarkable cycling stability.

Optical Power Optimization of the Single Mode Vertical Cavity Surface Emitting Lasers by Two Oxide Layers

2011 ◽  
Vol 383-390 ◽  
pp. 6283-6288 ◽  
Author(s):  
Mohamad Yazdanypoor ◽  
Asghar Gholami
Keyword(s):  
Output Power ◽  
Optical Power ◽  
Single Mode ◽  
Threshold Current ◽  
Cavity Surface ◽  
Oxide Layers ◽  
High Frequency Response ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

Influence of using two oxide layers in the both sides of active layer with different position and aperture size on Vertical Cavity Surface Emitting Laser (VCSEL) performance is analyzed showing effects on the output power, single mode operation and threshold current. In addition, for improving speed we use ion implant area along with thick oxide layer to minimize parasitic elements. As the result, the proposed design exhibits much better stability of the fundamental mode over a wider current range, much higher output power, lower threshold current, than the conventional one with a high frequency response.

scholarly journals Chemical Composition of Native Oxide Layers on In+Implanted and Thermally Annealed GaAs

2013 ◽  
Vol 123 (5) ◽  
pp. 943-947 ◽  
Author(s):  
M. Kulik ◽  
D. Kołodyńska ◽  
J. Żuk ◽  
F.F. Komarov ◽  
J. Filiks
Keyword(s):  
Chemical Composition ◽  
Native Oxide ◽  
Oxide Layers

Measuring thicknesses of native oxide, crystalline-silicon, and buried oxide layers and the interface roughnesses of SOI

2000 ◽  
Author(s):  
Iris Bloomer ◽  
George G. Li ◽  
A. Rahim Forouhi ◽  
A. Auberton-Herve ◽  
Andrew Wittkower
Keyword(s):  
Crystalline Silicon ◽  
Native Oxide ◽  
Oxide Layers ◽  
Buried Oxide
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