scholarly journals Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 35520-35528
Author(s):  
Qing Zhu ◽  
Xiaohua Ma ◽  
Bin Hou ◽  
Mei Wu ◽  
Jiejie Zhu ◽  
...  
Keyword(s):  
Cryogenic Temperature ◽  
Reverse Bias ◽  
Piezoelectric Effect ◽  
Inverse Piezoelectric Effect ◽  
Gan Hemts

Localized Damage in AlGaN/GaN HEMTs Induced by Reverse-Bias Testing

2009 ◽  
Vol 30 (5) ◽  
pp. 427-429 ◽  
Author(s):  
E. Zanoni ◽  
F. Danesin ◽  
M. Meneghini ◽  
A. Cetronio ◽  
C. Lanzieri ◽  
...  
Keyword(s):  
Reverse Bias ◽  
Gan Hemts ◽  
Localized Damage

Testing System of Needle Selectors for Jacquard Knitting Machines

2013 ◽  
Vol 397-400 ◽  
pp. 1174-1177
Author(s):  
Jie Ma ◽  
Xiao Feng Zha ◽  
Hai Bin Tao ◽  
Jun Fang Ni
Keyword(s):  
Control System ◽  
Working Conditions ◽  
Piezoelectric Effect ◽  
Testing System ◽  
C Language ◽  
Inverse Piezoelectric Effect

Based on piezoelectric theory of computer jacquard circular knitting machines, the needle selectors are analyzed under various complicated working conditions. According to characteristics of the inverse piezoelectric effect, the control system for needle mechanisms is designed and the driving program is implemented by C language, which is used to test the functions of needle mechanisms.

scholarly journals Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect

2014 ◽  
Vol 35 (7) ◽  
pp. 735-737 ◽  
Author(s):  
Szu-Ping Tsai ◽  
Heng-Tung Hsu ◽  
Che-Yang Chiang ◽  
Yung-Yi Tu ◽  
Chia-Hua Chang ◽  
...  
Keyword(s):  
Active Region ◽  
Flip Chip ◽  
Performance Enhancement ◽  
Piezoelectric Effect ◽  
Gan Hemts

Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress

2010 ◽  
Vol 50 (9-11) ◽  
pp. 1523-1527 ◽  
Author(s):  
Valerio Di Lecce ◽  
Michele Esposto ◽  
Matteo Bonaiuti ◽  
Gaudenzio Meneghesso ◽  
Enrico Zanoni ◽  
...  
Keyword(s):  
Reverse Bias ◽  
Bias Stress ◽  
Gan Hemts

The Effect of Changing Epitaxial Strain on Colossal Magnetoresistance Thin Films

2002 ◽  
Vol 751 ◽  
Author(s):  
Darren Dale ◽  
Aaron Fleet ◽  
J.D. Brock ◽  
Y. Suzuki
Keyword(s):  
Thin Films ◽  
Phase Transitions ◽  
Colossal Magnetoresistance ◽  
Strain State ◽  
Piezoelectric Effect ◽  
Structural Phase ◽  
Epitaxial Thin Films ◽  
Structural Phase Transitions ◽  
Inverse Piezoelectric Effect ◽  
Epitaxial Strain

ABSTRACTWe have studied the properties of epitaxial La(1-x)SrxMnO3 (x=0.3, 0.5) epitaxial thin films grown on BaTiO3 and SrTiO3. Significant modifications of properties are observed in magnetization and resistivity versus temperature experiments. These modifications occur at temperatures corresponding to structural phase transitions in the substrate. The x=0.5 composition is particularly sensitive to changes in the epitaxial strain state, exhibiting a direct correlation between changes in strain, magnetization and resistivity. Strain can also be induced in BaTiO3 by the inverse piezoelectric effect, which results in as much as a 13% decrease in the resistivity of the film.

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