RF and low-frequency noise models for RF Si MOS transistors

Author(s):  
Madhu S. Gupta
2013 ◽  
Vol 854 ◽  
pp. 21-27 ◽  
Author(s):  
N.P. Garbar ◽  
Valeriya N. Kudina ◽  
V.S. Lysenko ◽  
S.V. Kondratenko ◽  
Yu.N. Kozyrev

Low-frequency noise of the structures with Ge-nanoclusters of rather high surface density grown on the oxidized silicon surface is investigated for the first time. It was revealed that the 1/f γ noise, where γ is close to unity, is the typical noise component. Nevertheless, the 1/f γ noise sources were found to be distributed nonuniformly upon the oxidized silicon structure with Ge-nanoclusters. The noise features revealed were analyzed in the framework of widely used noise models. However, the models used appeared to be unsuitable to explain the noise behavior of the structures studied. The physical processes that should be allowed for to develop the appropriate noise model are discussed.


2009 ◽  
Author(s):  
O. Marinov ◽  
M. J. Deen ◽  
Massimo Macucci ◽  
Giovanni Basso

1991 ◽  
Vol 38 (2) ◽  
pp. 323-327 ◽  
Author(s):  
T. Elewa ◽  
B. Boukriss ◽  
H.S. Haddara ◽  
A. Chovet ◽  
S. Cristoloveanu

1968 ◽  
Vol 11 (9) ◽  
pp. 797-812 ◽  
Author(s):  
S. Christensson ◽  
I. Lundström ◽  
C. Svensson

Sign in / Sign up

Export Citation Format

Share Document