Study of optical and electrical properties of sputtered indium oxide films

Author(s):  
M. Predanocy ◽  
I. Fasaki ◽  
M. Wilke ◽  
I. Hotovy ◽  
I. Kosc ◽  
...  
1994 ◽  
Vol 76 (12) ◽  
pp. 8209-8211 ◽  
Author(s):  
Hong Koo Kim ◽  
Cheng Chung Li ◽  
Gerald Nykolak ◽  
Philippe C. Becker

2021 ◽  
Vol 1160 ◽  
pp. 51-55
Author(s):  
Cheng Ying Shi ◽  
Guang Hong Wang

Hafnium and Hydrogen co-doped indium oxide films (IHFO:H) were prepared by radio frequency magnetron sputtering technology. The effect of hydrogen-donor dopant on the structural, optical and electrical properties of the films was investigated systematically. The resistivity of the IHFO:H film decreased by 2.4×10-4 Ω cm and the mobility improved by 8.2 cm2/Vs compared with Hafnium oxide doped indium oxide film. Employing the IHFO:H film as an electrode for a solar cell can improve efficiency.


1996 ◽  
Vol 80 (2) ◽  
pp. 978-984 ◽  
Author(s):  
Naoaki Taga ◽  
Hidefumi Odaka ◽  
Yuzo Shigesato ◽  
Itaru Yasui ◽  
Masayuki Kamei ◽  
...  

2003 ◽  
Vol 42 (Part 1, No. 6A) ◽  
pp. 3621-3622
Author(s):  
Hidetoshi Saitoh ◽  
Ming Guang Zhang ◽  
Kouichi Takayama ◽  
Shigeo Ohshio ◽  
Junichi Nishino ◽  
...  

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