A readout circuit with wide dynamic range for differential capacitive sensing applications

2013 ◽  
Author(s):  
Fatemeh Aezinia ◽  
Behraad Bahreyni
Keyword(s):  
Dynamic Range ◽  
Readout Circuit ◽  
Capacitive Sensing ◽  
Wide Dynamic Range ◽  
Sensing Applications

A Low-Power Wide Dynamic-Range Current Readout Circuit for Ion-Sensitive FET Sensors

2017 ◽  
Vol 11 (3) ◽  
pp. 523-533 ◽  
Author(s):  
Hyunwoo Son ◽  
Hwasuk Cho ◽  
Jahyun Koo ◽  
Youngwoo Ji ◽  
Byungsub Kim ◽  
...  
Keyword(s):  
Low Power ◽  
Dynamic Range ◽  
Readout Circuit ◽  
Wide Dynamic Range

Low-noise wide dynamic range readout circuit for multi-stage microfluidic cell sorting systems

2009 ◽  
Author(s):  
Benjamin R. Geheb ◽  
Meggie M.G. Grafton ◽  
JaeHyuk Jang ◽  
Lisa M. Reece ◽  
James F. Leary ◽  
...  
Keyword(s):  
Cell Sorting ◽  
Dynamic Range ◽  
Low Noise ◽  
Readout Circuit ◽  
Wide Dynamic Range ◽  
Multi Stage

Wide dynamic range microwave planar coupled ring resonator for sensing applications

2016 ◽  
Vol 108 (23) ◽  
pp. 232906 ◽  
Author(s):  
Mohammad Hossein Zarifi ◽  
Mojgan Daneshmand
Keyword(s):  
Ring Resonator ◽  
Dynamic Range ◽  
Wide Dynamic Range ◽  
Sensing Applications

A low-power wide dynamic-range current readout circuit for biosensors

2018 ◽  
Author(s):  
Hyunwoo Son ◽  
Hwasuk Cho ◽  
Jahyun Koo ◽  
Youngwoo Ji ◽  
Byungsub Kim ◽  
...  
Keyword(s):  
Low Power ◽  
Dynamic Range ◽  
Readout Circuit ◽  
Wide Dynamic Range

A Low-Power, Wide-Dynamic-Range Semi-Digital Universal Sensor Readout Circuit Using Pulsewidth Modulation

2011 ◽  
Vol 11 (5) ◽  
pp. 1134-1144 ◽  
Author(s):  
Julia Hsin-Lin Lu ◽  
Mac Inerowicz ◽  
Sanghoon Joo ◽  
Jong-Kee Kwon ◽  
Byunghoo Jung
Keyword(s):  
Low Power ◽  
Dynamic Range ◽  
Readout Circuit ◽  
Wide Dynamic Range ◽  
Pulsewidth Modulation

scholarly journals An Approach for a Wide Dynamic Range Low-Noise Current Readout Circuit

2020 ◽  
Vol 10 (3) ◽  
pp. 23
Author(s):  
Wei Wang ◽  
Sameer Sonkusale
Keyword(s):  
High Speed ◽  
Dynamic Range ◽  
Low Noise ◽  
Current Gain ◽  
Readout Circuit ◽  
Wide Dynamic Range ◽  
Noise Current ◽  
Readout Circuits ◽  
Conversion Stage ◽  
Gain Stage

Designing low-noise current readout circuits at high speed is challenging. There is a need for preamplification stages to amplify weak input currents before being processed by conventional integrator based readout. However, the high current gain preamplification stage usually limits the dynamic range. This article presents a 140 dB input dynamic range low-noise current readout circuit with a noise floor of 10 fArms/sq(Hz). The architecture uses a programmable bidirectional input current gain stage followed by an integrator-based analog-to-pulse conversion stage. The programmable current gains setting enables one to achieve higher overall input dynamic range. The readout circuit is designed and in 0.18 μm CMOS and consumes 10.3 mW power from a 1.8 V supply. The circuit has been verified using post-layout simulations.

Slow-Scan CCD Observation of Backscattering Patterns in SEM

1992 ◽  
Vol 50 (2) ◽  
pp. 1308-1309
Author(s):  
F. Ouyang ◽  
D. A. Ray ◽  
O. L. Krivanek
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Dynamic Range ◽  
High Sensitivity ◽  
Lens System ◽  
Wide Dynamic Range ◽  
Peltier Cooler ◽  
Diffraction Patterns ◽  
Scanning Electron

Electron backscattering Kikuchi diffraction patterns (BKDP) reveal useful information about the structure and orientation of crystals under study. With the well focused electron beam in a scanning electron microscope (SEM), one can use BKDP as a microanalysis tool. BKDPs have been recorded in SEMs using a phosphor screen coupled to an intensified TV camera through a lens system, and by photographic negatives. With the development of fiber-optically coupled slow scan CCD (SSC) cameras for electron beam imaging, one can take advantage of their high sensitivity and wide dynamic range for observing BKDP in SEM.We have used the Gatan 690 SSC camera to observe backscattering patterns in a JEOL JSM-840A SEM. The CCD sensor has an active area of 13.25 mm × 8.83 mm and 576 × 384 pixels. The camera head, which consists of a single crystal YAG scintillator fiber optically coupled to the CCD chip, is located inside the SEM specimen chamber. The whole camera head is cooled to about -30°C by a Peltier cooler, which permits long integration times (up to 100 seconds).

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