PSP-Based Scalable MOS Varactor Model

2007 IEEE Custom Integrated Circuits Conference ◽

10.1109/cicc.2007.4405780 ◽

2007 ◽

Author(s):

J. Victory ◽

Z. Zhu ◽

Q. Zhou ◽

W. Wu ◽

G. Gildenblat ◽

...

Keyword(s):

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A 2.45GHz Wide Tuning Range VCO Using MOS Varactor in 0.35μm SiGe BiCMOS Technology

2005 IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications ◽

10.1109/mape.2005.1617826 ◽

2006 ◽

Author(s):

H. Feng ◽

Q. Wu ◽

X. Guan ◽

R. Zhan ◽

A. Wang

Keyword(s):

Tuning Range ◽

Wide Tuning Range ◽

Bicmos Technology ◽

Sige Bicmos ◽

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Surface-Potential-Based MOS Varactor Model

Compact Modeling ◽

10.1007/978-90-481-8614-3_11 ◽

2010 ◽

pp. 327-355

Author(s):

Zeqin Zhu ◽

Gennady Gildenblat ◽

James Victory ◽

Colin C. McAndrew

Keyword(s):

Surface Potential ◽

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Design and Characterization of Bulk Driven MOS Varactor based VCO at Near Threshold Regime

2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) ◽

10.1109/s3s.2018.8640143 ◽

2018 ◽

Author(s):

Lalit Mohan Dani ◽

Neeraj Mishra ◽

Shashank Kumar Banchhor ◽

Sandeep Miryala ◽

Aditya Doneria ◽

...

Keyword(s):

Mos Varactor ◽

Threshold Regime ◽

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Novel MOS varactor device optimization and modeling for high-speed transceiver design in FinFET technology

2016 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2016.7838500 ◽

2016 ◽

Author(s):

Jing Jing ◽

Susan Wu ◽

Xin Wu ◽

Parag Upadhyaya ◽

Ade Bekele

Keyword(s):

Transceiver Design ◽

Device Optimization ◽

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Improving linearity in MOS varactor based VCOs by means of the output quiescent bias point

Integration ◽

10.1016/j.vlsi.2016.08.003 ◽

2016 ◽

Vol 55 ◽

pp. 274-280 ◽

Author(s):

Victor R. Gonzalez-Diaz ◽

Luis A. Sanchez-Gaspariano ◽

Carlos Muñiz-Montero ◽

Jose J. Alvarado-Pulido

Keyword(s):

Mos Varactor ◽

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A 1.8-GHz CMOS VCO tuned by an accumulation-mode MOS varactor

2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings (IEEE Cat No.00CH36353) ◽

10.1109/iscas.2000.857093 ◽

2002 ◽

Author(s):

P. Andreani ◽

S. Mattisson

Keyword(s):

Accumulation Mode ◽

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A new modified I-MOS varactor for linear range enhancement

Microelectronics Journal ◽

10.1016/j.mejo.2019.06.013 ◽

2019 ◽

Vol 90 ◽

pp. 181-186 ◽

Author(s):

Ali Karimi ◽

Emad Ebrahimi

Keyword(s):

Linear Range ◽

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High-Q MOS Varactor Models for Quasi-Millimeter-Wave Low-Noise LC-VCOs

IEICE Transactions on Fundamentals of Electronics Communications and Computer Sciences ◽

10.1587/transfun.e97.a.759 ◽

2014 ◽

Vol E97.A (3) ◽

pp. 759-767 ◽

Author(s):

Yuka ITANO ◽

Shotaro MORIMOTO ◽

Sadayuki YOSHITOMI ◽

Nobuyuki ITOH

Keyword(s):

Millimeter Wave ◽

Low Noise ◽

High Q ◽

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A 0.7-2.4 GHZ LOW POWER VCO DESIGN WITH INVERSION MOS VARACTOR TUNING

Telecommunications and Radio Engineering ◽

10.1615/telecomradeng.v79.i3.60 ◽

2020 ◽

Vol 79 (3) ◽

pp. 249-260

Author(s):

D. Dwivedi ◽

M. Kumar

Keyword(s):

Low Power ◽

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A new MOS varactor BSIM4 model with temperature effect

2008 9th International Conference on Solid-State and Integrated-Circuit Technology ◽

10.1109/icsict.2008.4734580 ◽

2008 ◽

Author(s):

Zhanfei Chen ◽

Waisum Wong ◽

Jenhao Cheng ◽

Danmy He

Keyword(s):

Temperature Effect ◽

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