A 2.45GHz Wide Tuning Range VCO Using MOS Varactor in 0.35μm SiGe BiCMOS Technology

Author(s):  
H. Feng ◽  
Q. Wu ◽  
X. Guan ◽  
R. Zhan ◽  
A. Wang
Author(s):  
Hebat-Allah Yehia Abdeen ◽  
Shuai Yuan ◽  
Hermann Schumacher ◽  
Volker Ziegler ◽  
Askold Meusling

2005 ◽  
Vol 15 (02) ◽  
pp. 319-351 ◽  
Author(s):  
Byunghoo Jung ◽  
Ramesh Harjani

In this paper, we present a detailed analysis of VCOs using a capacitively degenerated negative resistance cell. The negative resistance cell using capacitive degeneration has a higher maximum attainable oscillation frequency and a smaller equivalent shunt capacitance when compared to the widely used cross-coupled negative-gm cell. These properties are of particular interest for the design of high-frequency and/or wide tuning range VCOs. The negative resistance provided by a traditional capacitively degenerated negative resistance cell is lower than that provided by a cross-coupled negative-gm cell. We present an active capacitive degeneration topology that overcomes this limitation. To validate this circuit topology we use two test vehicles. The first test vehicle is a 5.3 GHz VCO designed in a 0.25 μm CMOS technology and the second test vehicle is a 20 GHz VCO designed in a 0.25 μm BiCMOS technology. Measurement and simulation results from both test vehicles effectively demonstrate the efficacy of the capacitive degeneration technique.


2013 ◽  
Vol 22 (10) ◽  
pp. 1340035
Author(s):  
MAHALINGAM NAGARAJAN ◽  
KAIXUE MA ◽  
KIAT SENG YEO ◽  
WEI MENG LIM

A fully integrated push–push voltage controlled oscillator (VCO) working in K-band with a large tuning range and a low phase noise fabricated in a 0.18 μm SiGe BiCMOS technology is presented. Multi-coupled LC tanks are used to improve the tuning range, power consumption and phase noise. Digital tuning varactors are used to maintain a low VCO tuning sensitivity (K VCO ) and maximum frequency overlap. The VCO achieves a frequency tuning range (FTR) of 17% at 12 GHz, a phase noise of -106.62 dBc/Hz at 1 MHz offset and consumes 7 mW from 1.8 V supply.


2021 ◽  
Vol 68 (4) ◽  
pp. 1439-1445
Author(s):  
Hanbin Ying ◽  
Jeffrey W. Teng ◽  
John D. Cressler

Electronics ◽  
2021 ◽  
Vol 10 (12) ◽  
pp. 1382
Author(s):  
Xiaoying Deng ◽  
Huazhang Li ◽  
Mingcheng Zhu

Based on the idea of bisection method, a new structure of All-Digital Phased-Locked Loop (ADPLL) with fast-locking is proposed. The structure and locking method are different from the traditional ADPLLs. The Control Circuit consists of frequency compare module, mode-adjust module and control module, which is responsible for adjusting the frequency control word of digital-controlled-oscillator (DCO) by Bisection method according to the result of the frequency compare between reference clock and restructure clock. With a high frequency cascade structure, the DCO achieves wide tuning range and high resolution. The proposed ADPLL was designed in SMIC 180 nm CMOS process. The measured results show a lock range of 640-to-1920 MHz with a 40 MHz reference frequency. The ADPLL core occupies 0.04 mm2, and the power consumption is 29.48 mW, with a 1.8 V supply. The longest locking time is 23 reference cycles, 575 ns, at 1.92 GHz. When the ADPLL operates at 1.28 GHz–1.6 GHz, the locking time is the shortest, only 9 reference cycles, 225 ns. Compared with the recent high-performance ADPLLs, our design shows advantages of small area, short locking time, and wide tuning range.


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