Hybrid Graphene-WS2 Mach-Zehnder modulator on passive silicon waveguide

2021 ◽  
Author(s):  
ChengHan Wu ◽  
Steven Brems ◽  
Inge Asselberghs ◽  
Cedric Huyghebaert ◽  
Vito Sorianello ◽  
...  
Keyword(s):  
Silicon Waveguide ◽  
Mach Zehnder Modulator

scholarly journals Graphene Embedded Modulator with Extremely Small Footprint and High Modulation Efficiency

2014 ◽  
Vol 2014 ◽  
pp. 1-6
Author(s):  
Ran Hao ◽  
Jia-Min Jin
Keyword(s):  
Extinction Ratio ◽  
Zero Point ◽  
Active Components ◽  
Silicon Waveguide ◽  
High Modulation ◽  
Small Footprint ◽  
Mach Zehnder Modulator ◽  
Optical Applications ◽  
On Chip ◽  
Modulation Speed

By embedding graphene sheet in the silicon waveguide, the overall effective mode index displays unexpected symmetry and the electrorefraction effect has been significantly enhanced near the epsilon-near-zero point. An eight-layer graphene embedded Mach-Zehnder Modulator has been theoretically demonstrated with the advantage of ultracompact footprint (4 × 2 μm2), high modulation efficiency (1.316 V·μm), ultrafast modulation speed, and large extinction ratio. Our results may promote various on-chip active components, boosting the utilization of graphene in optical applications.

Generation of Millimeter Waves with Fine Frequency Tunability Using Mach-Zehnder-Modulator-Based Flat Comb Generator

2013 ◽  
Vol E96.C (2) ◽  
pp. 192-196 ◽  
Author(s):  
Isao MOROHASHI ◽  
Yoshihisa IRIMAJIRI ◽  
Takahide SAKAMOTO ◽  
Tetsuya KAWANISHI ◽  
Motoaki YASUI ◽  
...  
Keyword(s):  
Millimeter Waves ◽  
Frequency Tunability ◽  
Mach Zehnder Modulator

Recovery time for a silicon waveguide all-optical switch

1988 ◽  
Vol 24 (6) ◽  
pp. 303 ◽  
Author(s):  
P.D. Colbourne ◽  
P.E. Jessop
Keyword(s):  
Recovery Time ◽  
Optical Switch ◽  
Silicon Waveguide ◽  
All Optical ◽  
All Optical Switch

scholarly journals Performance analysis of carrier depletion silicon PIN phase shifter

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Jesuwanth Sugesh Ramesh Gabriel ◽  
Sivasubramanian Arunagiri
Keyword(s):  
Performance Analysis ◽  
Bit Error Rate ◽  
Error Rate ◽  
Phase Shifter ◽  
Extinction Ratio ◽  
Fibre Length ◽  
Data Rate ◽  
Operating Voltage ◽  
Data Centre ◽  
Mach Zehnder Modulator

AbstractIn this paper, we report the performance of a carrier depletion Silicon PIN phase shifter with over layer of 130 nm. It is observed that an optimum intrinsic gap of 250 nm for a device length of 5 mm at 2 V, resulted in Extinction Ratio (ER) of 23.41 dB and Bit Error Rate (BER) of 1.00 × 10−7 is obtained for 50 Gbps. The phase shifter is also designed for length 2 mm with an intrinsic gap of 100 nm at an operating voltage <4 V. The study also reveals that the proposed design for Mach-Zehnder modulator operating at a data rate of 100 Gbps for the concentration of P = 7 × 1017 cm−3 and N = 5 × 1017 cm−3 gives better BER and phase performance. The proposed design was also analysed in an intra-data centre communication setup of fibre length 15 km.

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