Room Temperature Multi-stacked Quantum Dot Lasers Basic Components Of Threshold Current Density

2005 ◽  
Author(s):  
S.V. Zaitsev ◽  
A.M. Georgievski ◽  
N.Yu. Gordeev ◽  
V.I. Kopchatov ◽  
V.M. Ustinov ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Current Density ◽  
Room Temperature ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Dot Lasers

scholarly journals 1.32 μm InAs/InGaAs/GaAs quantum dot lasers operating at room temperature with low threshold current density

2006 ◽  
Author(s):  
Abdelmajid Salhi ◽  
Vittorianna Tasco ◽  
Luigi Martiradonna ◽  
Giuseppe Visimberga ◽  
Laura Fortunato ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Current Density ◽  
Room Temperature ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Dot Lasers ◽  
Low Threshold ◽  
Gaas Quantum Dot

Ultralow-threshold-current-density quantum dot lasers using the dots-in-a-well (DWELL) structure

2000 ◽  
Author(s):  
Guangtian T. Liu ◽  
Andreas Stintz ◽  
Hua Li ◽  
Luke F. Lester ◽  
Kevin J. Malloy
Keyword(s):  
Quantum Dot ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Dot Lasers

Quantum-dot lasers: Principal components of the threshold current density

1997 ◽  
Vol 31 (9) ◽  
pp. 947-949 ◽  
Author(s):  
S. V. Zaitsev ◽  
N. Yu. Gordeev ◽  
V. I. Kopchatov ◽  
A. M. Georgievskii ◽  
V. M. Ustinov ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Current Density ◽  
Principal Components ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Dot Lasers

Growth, Fabrication, and Operating Characteristics of Ultra-Low Threshold Current Density 1.3 µm Quantum Dot Lasers

2005 ◽  
Vol 44 (4B) ◽  
pp. 2520-2522 ◽  
Author(s):  
Sumon K. Ray ◽  
Kristian M. Groom ◽  
Richard A. Hogg ◽  
Hui-Yun Liu ◽  
Ian R. Sellers ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Dot Lasers ◽  
Operating Characteristics ◽  
Low Threshold

Wavelength Shift of InP-Based InAs Quantum Dot Lasers Above Room Temperature

2007 ◽  
Vol 7 (12) ◽  
pp. 4443-4446 ◽  
Author(s):  
Jin Soo Kim ◽  
Cheul-Ro Lee ◽  
Kyeong Won Seol ◽  
Dae Kon Oh
Keyword(s):  
Quantum Dot ◽  
Room Temperature ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Wavelength Shift ◽  
Material System ◽  
Quantum Dot Lasers ◽  
Lasing Wavelength ◽  
Band Filling ◽  
Inas Quantum Dot

For the InAs quantum dot (QD) lasers based on the InAlGaAs-InAlAs-InP material system, the lasing operation was successfully achieved up to 100 °C. The lasing wavelength was linearly increased with a slope of 0.100 nm/K up to 50 °C and then, decreased with (−)0.419 nm/K above 50 °C. The temperature-induced shift in the lasing wavelength can be attributed to both the band-gap shrinkage and the band-filling effect of carriers, which was well agreed with the characteristic temperatures of the InAs QD laser calculated from the temperature dependence of threshold current density.

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