Abstract
In this study, the monolithic integration of LEDs with different emission colors (wavelengths of 543, 573, and 597 nm) with the directional radiation profiles was demonstrated. InGaN/GaN nanocolumn arrays ordered in a triangular lattice were prepared side by side, changing the diameter of the n-GaN nanocolumn (Dn-GaN). The periodic arrangement of the nanocolumns led to the photonic crystal (PC) effect. The photonic band edge wavelength (λB) and the InGaN bandgap were controlled by the Dn-GaN. By controlling λB closely at the bandgap wavelength, the PC effect provided directional beam radiation from the LEDs with radiation angles of approximately ±30°
Experimental Study of Electronic Quantum Interference, Photonic Crystal Cavity, Photonic Band Edge Effects for Optical Amplification