Exploiting & Refining Depth Distributions with Triangulation Light Curtains

Author(s):  
Yaadhav Raaj ◽  
Siddharth Ancha ◽  
Robert Tamburo ◽  
David Held ◽  
Srinivasa G. Narasimhan
Keyword(s):  
1974 ◽  
Vol 108 (963) ◽  
pp. 679-687 ◽  
Author(s):  
W. O. Criminale, ◽  
D. F. Winter

2018 ◽  
Vol 20 (4) ◽  
pp. 265-274
Author(s):  
F.F. Umarov ◽  
A.M. Rasulov ◽  
A.A. Dzhurakhalov

In the present work the peculiarities of ion implantation and colliding particles mass ratio influence on the ranges, energy loss and profiles of distribution for 1−5 keV P+ ions channelling in Si(110) and SiC(110) at normal incidence, and 1 keV Be+ and Se+ ions in GaAs(100), as well as 5 keV Ar+ and Kr+ on Cu(001) surface at glancing incidence are carried out by computer simulation in binary collision approximation. It is shown that for paraxial part of a beam the main contribution to the total energy loss comes from inelastic ones. It has been established that the energy loss of ions transmitted through thin crystal and depth profile distributions depend on width of the channel and mass ratio of colliding atoms. It was shown that at grazing surface channeling conditions the main peak of the implanted depth distributions is considerably shallow, the range for Se+ ions is shallower and the half-width of profile for these ions is narrow than that for Be+ ions. The results allow one to select the optimum for implanted depth distributions with demanded shape at narrow near-surface area of crystals obtaining.


2018 ◽  
Vol 8 (18) ◽  
pp. 9426-9438 ◽  
Author(s):  
Alf B. Josefson ◽  
Lars-Ove Loo ◽  
Mats Blomqvist ◽  
Johan Rolandsson

2017 ◽  
Vol 9 (1) ◽  
pp. 341-356 ◽  
Author(s):  
Hannah M. Murphy ◽  
Jonathan A. D. Fisher ◽  
Arnault Le Bris ◽  
Mathieu Desgagnés ◽  
Martin Castonguay ◽  
...  

1986 ◽  
Vol 25 (Part 2, No. 9) ◽  
pp. L722-L724 ◽  
Author(s):  
Shizuo Taniguchi ◽  
Tamio Endo ◽  
Koichi Sugiyama

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