2019 ◽  
Vol 13 (1) ◽  
pp. 104-113 ◽  
Author(s):  
Adis Dzunuzovic ◽  
Mirjana Vijatovic-Petrovic ◽  
Nikola Ilic ◽  
Jelena Bobic ◽  
Biljana Stojanovic

Ni-Zn ferrites, with the general formula Ni1-xZnxFe2O4 (x = 0.0, 0.3, 0.5, 0.7, 1.0), CoFe2O4, BaTiO3 and PbZr0.52Ti0.48O3 powders were synthesized by auto-combustion method. The composites were prepared by mixing the appropriate amounts of individual phases, pressing and conventional sintering. X-ray analysis, for individual phase and composites, indicated the formation of crystallized structure of NiZnFe2O4, BaTiO3 and PbZr0.52Ti0.48O3 without the presence of secondary phases or any impurities. SEM analyses indicated a formation of uniform grain distribution for ferromagnetic and ferroelectric phases and formation of two types of grains, polygonal and rounded, respectively. Magneto-dielectric effect was exhibited in all samples because of the applied stress occurring due to the piezomagnetic effect and the magnetic field induced the variation of the dielectric constant. For all samples the dielectric constant was higher in applied magnetic field. At the low frequency, the dispersion of dielectric losses appeared, while at the higher frequency the value of tan ? become constant (Maxwell-Wagner relaxation). Investigation of J-E relation between leakage and electric field revealed that both nickel zinc ferrite and composites have three different regions of conduction: region with ohmic conduction mechanism, region with the trap-controlled space charge limited current mechanism and region with space charge limited current mechanism.


1966 ◽  
Vol 2 (7) ◽  
pp. 282
Author(s):  
A.M. Phahle ◽  
K.C. Kao ◽  
J.H. Calderwood

1995 ◽  
Vol 377 ◽  
Author(s):  
G. J. Adriaenssens ◽  
B. Yan ◽  
A. Eliat

ABSTRACTA full and detailed transient space-charge-limited current (T-SCLC) study of a-Si:H p-i-n diodes has been carried out in the time range from 108s to 10s. In the short-time regime, general features of T-SCLC such as the current cusp and the carrier extraction period were observed, and related transport parameters were deduced. Electron emission from deep states was studied by measuring the current transients well beyond the extraction time. The emission time is thermally activated at temperatures higher than 250K and levels off at lower temperatures. The high temperature behaviour places the upper edge of the deep states at 0.42–0.52eV below the conduction band edge, and the attempt-to-escape frequency in the range of 1011-1013Hz. An observed shift of emission time with light intensity is attributed to defect relaxation.


2005 ◽  
Vol 86 (9) ◽  
pp. 092105 ◽  
Author(s):  
P. W. M. Blom ◽  
C. Tanase ◽  
D. M. de Leeuw ◽  
R. Coehoorn

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