Design and characterization of GaAs-Ga/sub 0.89/In/sub 0.11/N/sub 0.02/As/sub 0.98/-GaAs NpN double heterojunction bipolar transistors with low turn-on voltage

2002 ◽  
Author(s):  
R.J. Welty ◽  
H.P. Xin ◽  
K. Mochizuki ◽  
C.W. Tu ◽  
P.M. Asbeck
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Turn On ◽  
Double Heterojunction

High-speed InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistors with low turn-on voltage

2002 ◽  
Vol 46 (4) ◽  
pp. 581-584 ◽  
Author(s):  
P.C Chang ◽  
C Monier ◽  
A.G Baca ◽  
N.Y Li ◽  
F Newman ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Bipolar Transistors ◽  
Turn On ◽  
Double Heterojunction

Reduction in Turn-on Voltage in GaInNAs and InGaAs-Based Double-Heterojunction Bipolar Transistors

2004 ◽  
Vol 43 (4B) ◽  
pp. 1919-1921 ◽  
Author(s):  
Cheng-Hsien Wu ◽  
Yan-Kuin Su ◽  
Shang-Chin Wei ◽  
Shoou-Jinn Chang ◽  
Chi-Cheong Sio ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Turn On ◽  
Double Heterojunction

Correlation between Photoreflectance Spectra and Electrical Characteristics of InP/GaAsSb Double Heterojunction Bipolar Transistors

2004 ◽  
Vol 829 ◽  
Author(s):  
Hiroki Sugiyama ◽  
Yasuhiro Oda ◽  
Haruki Yokoyama ◽  
Takashi Kobayashi ◽  
Masahiro Uchida ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
High Concentration ◽  
Organic Vapor ◽  
Double Heterojunction ◽  
Metal Organic ◽  
Emitter Region ◽  
Recombination Centers ◽  
Recombination Current

ABSTRACTWe report a photoreflectance (PR) characterization of InP/GaAsSb double-heterojunction bipolar transistor (DHBT) epitaxial wafers grown by metal-organic vapor-phase epitaxy (MOVPE). The origin of the Franz-Keldysh oscillations (FKOs) in the PR spectra was identified by step etching of the samples. FKOs from the InP emitter region were observed in the wafer with low recombination forward current at the emitter-base (E/B) heterojunction. In contrast, they did not appear when recombination current was dominant. The absence of the FKOs from the emitter indicates the high concentration of the recombination centers at the E/B heterojunction. We have also measured PR spectra from InAlP/GaAsSb/InP DHBT wafers. Pronounced FKOs from InAlP emitter reflect the suppression of recombination at E/B heterojunctions.

Characterization of InP/InGaAs double-heterojunction bipolar transistors with tunnelling barriers and composite collector structures

2001 ◽  
Vol 17 (1) ◽  
pp. 87-92 ◽  
Author(s):  
Wen-Huei Chiou ◽  
Hsi-Jen Pan ◽  
Rong-Chau Liu ◽  
Chun-Yuan Chen ◽  
Chih-Kai Wang ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Double Heterojunction
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