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High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate
Device Research Conference. Conference Digest (Cat. No.01TH8561)
◽
10.1109/drc.2001.937882
◽
2002
◽
Cited By ~ 1
Author(s):
Y. Sano
◽
T. Yamada
◽
J. Mita
◽
K. Kaifu
◽
H. Ishikawa
◽
...
Keyword(s):
Sapphire Substrate
◽
High Performance
◽
Gan Hemts
◽
Recessed Gate
Download Full-text
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References
High Performance AlGaN/GaN HEMTs with Recessed Gate
Materials Science Forum
◽
10.4028/www.scientific.net/msf.389-393.1511
◽
2002
◽
Vol 389-393
◽
pp. 1511-1514
Author(s):
Y. Sano
◽
J. Mita
◽
T. Yamada
◽
T. Makita
◽
K. Kaifu
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...
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◽
Gan Hemts
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High performance recessed gate AlGaN/GaN HEMTs
Compound Semiconductors 2001
◽
10.1201/9781482268980-13
◽
2002
◽
pp. 59-64
Keyword(s):
High Performance
◽
Gan Hemts
◽
Recessed Gate
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High-Performance AlN/GaN HEMTs on Sapphire Substrate With an Oxidized Gate Insulator
IEEE Electron Device Letters
◽
10.1109/led.2011.2167952
◽
2011
◽
Vol 32
(12)
◽
pp. 1677-1679
◽
Cited By ~ 21
Author(s):
Kelson D. Chabak
◽
Dennis E. Walker
◽
Michael R. Johnson
◽
Antonio Crespo
◽
Amir M. Dabiran
◽
...
Keyword(s):
Sapphire Substrate
◽
High Performance
◽
Gate Insulator
◽
Gan Hemts
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High performance 0.15 μm recessed gate AlGaN/GaN HEMTs on sapphire
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)
◽
10.1109/iedm.2001.979571
◽
2002
◽
Cited By ~ 2
Author(s):
V. Kumar
◽
W. Lu
◽
F.A. Khan
◽
R. Schwindt
◽
A. Kuliev
◽
...
Keyword(s):
High Performance
◽
Gan Hemts
◽
Recessed Gate
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High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate
phys stat sol (a)
◽
10.1002/pssa.200303537
◽
2003
◽
Vol 200
(1)
◽
pp. 187-190
◽
Cited By ~ 8
Author(s):
Hideyuki Okita
◽
Katsuaki Kaifu
◽
Juro Mita
◽
Tomoyuki Yamada
◽
Yoshiaki Sano
◽
...
Keyword(s):
Sapphire Substrate
◽
Gan Hemt
◽
High Transconductance
◽
Recessed Gate
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Quasi-enhancement mode AlGaN/GaN HEMTs on sapphire substrate
Solid-State Electronics
◽
10.1016/s0038-1101(03)00245-4
◽
2003
◽
Vol 47
(11)
◽
pp. 2081-2084
◽
Cited By ~ 3
Author(s):
Jaesun Lee
◽
Dongmin Liu
◽
Zhaojun Lin
◽
Wu Lu
◽
Jeffrey S. Flynn
◽
...
Keyword(s):
Sapphire Substrate
◽
Enhancement Mode
◽
Gan Hemts
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High-performance AlGaN/GaN HEMTs on silicon substrates
The Fourth International Conference on Advanced Semiconductor Devices and Microsystem
◽
10.1109/asdam.2002.1088526
◽
2003
◽
Author(s):
P. Javorka
◽
A. Alam
◽
A. Fox
◽
M. Marso
◽
M. Heuken
◽
...
Keyword(s):
High Performance
◽
Silicon Substrates
◽
Gan Hemts
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Sapphire Substrate Processing for High-Performance GaN-Based Light-Emitting Diodes -Micropatterning of Sapphire Substrates and Its Effect on Light Enhancement in GaN-Based Light-Emitting Diodes-
Sensors and Materials
◽
10.18494/sam.2014.974
◽
2014
◽
pp. 393
Keyword(s):
Sapphire Substrate
◽
High Performance
◽
Light Emitting Diodes
◽
Light Emitting
◽
Sapphire Substrates
◽
Light Enhancement
◽
Substrate Processing
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High-Performance Analysis of Recessed Gate AlN/β-Ga2O3 HEMT
10.1109/icecct52121.2021.9616693
◽
2021
◽
Author(s):
Tushar Shivam
◽
B S Saini
◽
Ramesh K Sunkaria
◽
Ravi Ranjan
Keyword(s):
Performance Analysis
◽
High Performance
◽
Recessed Gate
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High-performance monolithically-integrated E/D mode InAlN/AlN/GaN HEMTs for mixed-signal applications
2010 International Electron Devices Meeting
◽
10.1109/iedm.2010.5703451
◽
2010
◽
Cited By ~ 8
Author(s):
Yong Tang
◽
Paul Saunier
◽
Ronghua Wang
◽
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◽
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◽
...
Keyword(s):
High Performance
◽
Mixed Signal
◽
Monolithically Integrated
◽
Gan Hemts
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