Room temperature negative differential resistance in AlN/GaN double barrier resonant tunneling diodes grown by RF-plasma assisted molecular beam epitaxy

60th DRC. Conference Digest Device Research Conference ◽

10.1109/drc.2002.1029572 ◽

2003 ◽

Author(s):

A. Kikuchi ◽

R. Bannai ◽

K. Kishino

Keyword(s):

Molecular Beam Epitaxy ◽

Negative Differential Resistance ◽

Resonant Tunneling ◽

Room Temperature ◽

Molecular Beam ◽

Differential Resistance ◽

Rf Plasma ◽

Double Barrier ◽

Tunneling Diodes ◽

Double Barrier Resonant Tunneling

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AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.1501157 ◽

2002 ◽

Vol 81 (9) ◽

pp. 1729-1731 ◽

Author(s):

Akihiko Kikuchi ◽

Ryo Bannai ◽

Katsumi Kishino ◽

Chia-Ming Lee ◽

Jen-Inn Chyi

Keyword(s):

Molecular Beam Epitaxy ◽

Resonant Tunneling ◽

Molecular Beam ◽

Rf Plasma ◽

Resonant Tunneling Diodes ◽

Double Barrier ◽

Tunneling Diodes ◽

Double Barrier Resonant Tunneling

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Demonstration of highly repeatable room temperature negative differential resistance in large area AlN/GaN double-barrier resonant tunneling diodes

Journal of Applied Physics ◽

10.1063/5.0033324 ◽

2021 ◽

Vol 129 (1) ◽

pp. 014502

Author(s):

HePeng Zhang ◽

JunShuai Xue ◽

YongRui Fu ◽

LanXing Li ◽

ZhiPeng Sun ◽

...

Keyword(s):

Negative Differential Resistance ◽

Resonant Tunneling ◽

Room Temperature ◽

Differential Resistance ◽

Resonant Tunneling Diodes ◽

Double Barrier ◽

Tunneling Diodes ◽

Double Barrier Resonant Tunneling

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Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 81, 1729 (2002)]

Applied Physics Letters ◽

10.1063/1.1622987 ◽

2003 ◽

Vol 83 (17) ◽

pp. 3626-3627 ◽

Author(s):

A. E. Belyaev ◽

C. T. Foxon ◽

S. V. Novikov ◽

O. Makarovsky ◽

L. Eaves ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Resonant Tunneling ◽

Molecular Beam ◽

Rf Plasma ◽

Resonant Tunneling Diodes ◽

Double Barrier ◽

Tunneling Diodes ◽

Double Barrier Resonant Tunneling

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Response to “Comment on ‘AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy’ ” [Appl. Phys. Lett. 83, 3626 (2003)]

Applied Physics Letters ◽

10.1063/1.1622988 ◽

2003 ◽

Vol 83 (17) ◽

pp. 3628-3628 ◽

Author(s):

Akihiko Kikuchi ◽

Ryo Bannai ◽

Katsumi Kishino ◽

Chia-Ming Lee ◽

Jen-Inn Chyi

Keyword(s):

Molecular Beam Epitaxy ◽

Resonant Tunneling ◽

Molecular Beam ◽

Rf Plasma ◽

Resonant Tunneling Diodes ◽

Double Barrier ◽

Tunneling Diodes ◽

Double Barrier Resonant Tunneling

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Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes

Applied Physics Letters ◽

10.1063/1.3515418 ◽

2010 ◽

Vol 97 (18) ◽

pp. 181109 ◽

Author(s):

C. Bayram ◽

Z. Vashaei ◽

M. Razeghi

Keyword(s):

Negative Differential Resistance ◽

Resonant Tunneling ◽

Room Temperature ◽

Aluminum Content ◽

Differential Resistance ◽

Resonant Tunneling Diodes ◽

Double Barrier ◽

Tunneling Diodes ◽

Double Barrier Resonant Tunneling

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Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.4961442 ◽

2016 ◽

Vol 109 (8) ◽

pp. 083504 ◽

Author(s):

Tyler A. Growden ◽

David F. Storm ◽

Weidong Zhang ◽

Elliott R. Brown ◽

David J. Meyer ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Negative Differential Resistance ◽

Resonant Tunneling ◽

Room Temperature ◽

Molecular Beam ◽

Differential Resistance ◽

Resonant Tunneling Diodes ◽

Tunneling Diodes

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Enhanced negative differential resistance in silicene double-barrier resonant tunneling diodes

The European Physical Journal B ◽

10.1140/epjb/e2020-10326-8 ◽

2020 ◽

Vol 93 (10) ◽

Author(s):

Dan-Na Liu ◽

Yong Guo ◽

Yu Song

Keyword(s):

Negative Differential Resistance ◽

Resonant Tunneling ◽

Differential Resistance ◽

Resonant Tunneling Diodes ◽

Double Barrier ◽

Tunneling Diodes ◽

Double Barrier Resonant Tunneling

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Negative differential resistance of CaF2/Si double barrier resonant tunneling diodes fabricated using plasma etching mesa isolation process

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/ab82a8 ◽

2020 ◽

Vol 59 (SI) ◽

pp. SIIE03

Author(s):

Yoshiro Kumagai ◽

Satoshi Fukuyama ◽

Hiroki Tonegawa ◽

Kizashi Mikami ◽

Kodai Hirose ◽

...

Keyword(s):

Plasma Etching ◽

Negative Differential Resistance ◽

Resonant Tunneling ◽

Differential Resistance ◽

Resonant Tunneling Diodes ◽

Double Barrier ◽

Tunneling Diodes ◽

Double Barrier Resonant Tunneling

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Repeatable low-temperature negative-differential resistance from Al0.18Ga0.82N/GaN resonant tunneling diodes grown by molecular-beam epitaxy on free-standing GaN substrates

Applied Physics Letters ◽

10.1063/1.4729819 ◽

2012 ◽

Vol 100 (25) ◽

pp. 252105 ◽

Author(s):

D. Li ◽

L. Tang ◽

C. Edmunds ◽

J. Shao ◽

G. Gardner ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Negative Differential Resistance ◽

Resonant Tunneling ◽

Molecular Beam ◽

Differential Resistance ◽

Resonant Tunneling Diodes ◽

Free Standing ◽

Tunneling Diodes

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Room temperature negative differential resistance of CdF2∕CaF2 double-barrier resonant tunneling diode structures grown on Si(100) substrates

Applied Physics Letters ◽

10.1063/1.2709508 ◽

2007 ◽

Vol 90 (9) ◽

pp. 092101 ◽

Author(s):

Tohru Kanazawa ◽

Ryo Fujii ◽

Takafumi Wada ◽

Yusuke Suzuki ◽

Masahiro Watanabe ◽

...

Keyword(s):

Negative Differential Resistance ◽

Resonant Tunneling ◽

Room Temperature ◽

Differential Resistance ◽

Resonant Tunneling Diode ◽

Double Barrier ◽

Tunneling Diode ◽

Double Barrier Resonant Tunneling

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