Enhanced negative differential resistance in silicene double-barrier resonant tunneling diodes

Dan-Na Liu; Yong Guo; Yu Song

doi:10.1140/epjb/e2020-10326-8

Enhanced negative differential resistance in silicene double-barrier resonant tunneling diodes

The European Physical Journal B ◽

10.1140/epjb/e2020-10326-8 ◽

2020 ◽

Vol 93 (10) ◽

Author(s):

Dan-Na Liu ◽

Yong Guo ◽

Yu Song

Keyword(s):

Negative Differential Resistance ◽

Resonant Tunneling ◽

Differential Resistance ◽

Resonant Tunneling Diodes ◽

Double Barrier ◽

Tunneling Diodes ◽

Double Barrier Resonant Tunneling

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Negative differential resistance of CaF2/Si double barrier resonant tunneling diodes fabricated using plasma etching mesa isolation process

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/ab82a8 ◽

2020 ◽

Vol 59 (SI) ◽

pp. SIIE03

Author(s):

Yoshiro Kumagai ◽

Satoshi Fukuyama ◽

Hiroki Tonegawa ◽

Kizashi Mikami ◽

Kodai Hirose ◽

...

Keyword(s):

Plasma Etching ◽

Negative Differential Resistance ◽

Resonant Tunneling ◽

Differential Resistance ◽

Resonant Tunneling Diodes ◽

Double Barrier ◽

Tunneling Diodes ◽

Double Barrier Resonant Tunneling

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Demonstration of highly repeatable room temperature negative differential resistance in large area AlN/GaN double-barrier resonant tunneling diodes

Journal of Applied Physics ◽

10.1063/5.0033324 ◽

2021 ◽

Vol 129 (1) ◽

pp. 014502

Author(s):

HePeng Zhang ◽

JunShuai Xue ◽

YongRui Fu ◽

LanXing Li ◽

ZhiPeng Sun ◽

...

Keyword(s):

Negative Differential Resistance ◽

Resonant Tunneling ◽

Room Temperature ◽

Differential Resistance ◽

Resonant Tunneling Diodes ◽

Large Area ◽

Double Barrier ◽

Tunneling Diodes ◽

Double Barrier Resonant Tunneling

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Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes

Applied Physics Letters ◽

10.1063/1.3515418 ◽

2010 ◽

Vol 97 (18) ◽

pp. 181109 ◽

Cited By ~ 58

Author(s):

C. Bayram ◽

Z. Vashaei ◽

M. Razeghi

Keyword(s):

Negative Differential Resistance ◽

Resonant Tunneling ◽

Room Temperature ◽

Aluminum Content ◽

Differential Resistance ◽

Resonant Tunneling Diodes ◽

Double Barrier ◽

Tunneling Diodes ◽

Double Barrier Resonant Tunneling

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Analysis of voltage periodic structures in the negative differential resistance region of double barrier resonant tunneling diodes

Superlattices and Microstructures ◽

10.1006/spmi.1995.1032 ◽

1995 ◽

Vol 17 (2) ◽

pp. 163-171

Author(s):

O. Berolo ◽

E. Fortin ◽

L. Allard

Keyword(s):

Negative Differential Resistance ◽

Resonant Tunneling ◽

Periodic Structures ◽

Differential Resistance ◽

Resonant Tunneling Diodes ◽

Double Barrier ◽

Tunneling Diodes ◽

Double Barrier Resonant Tunneling

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Room temperature negative differential resistance in AlN/GaN double barrier resonant tunneling diodes grown by RF-plasma assisted molecular beam epitaxy

60th DRC. Conference Digest Device Research Conference ◽

10.1109/drc.2002.1029572 ◽

2003 ◽

Author(s):

A. Kikuchi ◽

R. Bannai ◽

K. Kishino

Keyword(s):

Molecular Beam Epitaxy ◽

Negative Differential Resistance ◽

Resonant Tunneling ◽

Room Temperature ◽

Molecular Beam ◽

Differential Resistance ◽

Rf Plasma ◽

Double Barrier ◽

Tunneling Diodes ◽

Double Barrier Resonant Tunneling

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Influence of growth interruption on I–V characteristics of AlAs/GaAs double barrier resonant tunneling diodes

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586411 ◽

1992 ◽

Vol 10 (2) ◽

pp. 1045 ◽

Cited By ~ 1

Author(s):

V. K. Reddy

Keyword(s):

Resonant Tunneling ◽

Resonant Tunneling Diodes ◽

Double Barrier ◽

Tunneling Diodes ◽

Growth Interruption ◽

Double Barrier Resonant Tunneling

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A proposal to estimate homogeneous and inhomogeneous energy level broadening in double barrier resonant tunneling diodes

Compound Semiconductors 2001 ◽

10.1201/9781482268980-56 ◽

2002 ◽

pp. 395-406

Keyword(s):

Energy Level ◽

Resonant Tunneling ◽

Resonant Tunneling Diodes ◽

Double Barrier ◽

Tunneling Diodes ◽

Double Barrier Resonant Tunneling

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Accurate Modeling of Double Barrier Resonant Tunneling Diodes

Frontiers in Nanoscale Science of Micron/Submicron Devices ◽

10.1007/978-94-009-1778-1_19 ◽

1996 ◽

pp. 269-290

Author(s):

T. G. Roer ◽

H. Heyker ◽

M. Kwaspen ◽

W. Vleuten ◽

M. Hendriks ◽

...

Keyword(s):

Resonant Tunneling ◽

Resonant Tunneling Diodes ◽

Double Barrier ◽

Tunneling Diodes ◽

Double Barrier Resonant Tunneling

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Single-electron tunneling and Coulomb charging effects in aysmmetric double-barrier resonant-tunneling diodes

Physical Review B ◽

10.1103/physrevb.45.14407 ◽

1992 ◽

Vol 45 (24) ◽

pp. 14407-14410 ◽

Cited By ~ 62

Author(s):

M. Tewordt ◽

L. Marti´n-Moreno ◽

J. T. Nicholls ◽

M. Pepper ◽

M. J. Kelly ◽

...

Keyword(s):

Resonant Tunneling ◽

Electron Tunneling ◽

Single Electron ◽

Resonant Tunneling Diodes ◽

Double Barrier ◽

Tunneling Diodes ◽

Single Electron Tunneling ◽

Double Barrier Resonant Tunneling

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Negative differential resistance characteristics of GaN-based resonant tunneling diodes with quaternary AlInGaN as barrier

Semiconductor Science and Technology ◽

10.1088/1361-6641/abc855 ◽

2020 ◽

Vol 36 (1) ◽

pp. 015018

Author(s):

Wen-Lu Yang ◽

Lin-An Yang ◽

Xiao-Yu Zhang ◽

Yang Li ◽

Xiao-Hua Ma ◽

...

Keyword(s):

Negative Differential Resistance ◽

Resonant Tunneling ◽

Differential Resistance ◽

Resonant Tunneling Diodes ◽

Tunneling Diodes

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