Thin film In0.53Ga0.47As Schottky diodes for rectification and photodetection of 28.3 THz radiations

Author(s):  
Rozana Hussin ◽  
Lingjie Liu ◽  
Yi Luo
Keyword(s):  
2019 ◽  
Vol 1 (8) ◽  
pp. 1570-1580
Author(s):  
Joshua Wilson ◽  
Jiawei Zhang ◽  
Aimin Song

MRS Advances ◽  
2016 ◽  
Vol 1 (38) ◽  
pp. 2659-2664
Author(s):  
Varsha Rani ◽  
Akanksha Sharma ◽  
Subhasis Ghosh

ABSTRACTCharge transport properties of pentacene have been investigated by a joint experimental and theoretical study. The growth of pentacene on the substrates shows mainly two different polymorphic phases, a bulk phase and a thin-film phase. The thin-film phase is crucial for the charge transport in two-terminal and three-terminal devices such as organic Schottky diodes and organic thin film transistors, respectively. Experimentally, mobility in two-terminal devices is less by five orders of magnitude than that in three-terminal devices. We show here that this difference can be explained on the basis of strong electronic coupling between molecular dimers located in the ab-plane and relatively weak coupling between the planes (along the c-axis).


Author(s):  
J. Wang ◽  
C. Youtsey ◽  
R. McCarthy ◽  
R. Reddy ◽  
L. Guido ◽  
...  
Keyword(s):  

1989 ◽  
Vol 162 ◽  
Author(s):  
G. Sh. Gildenblat ◽  
S. A. Grot ◽  
C. W. Hatfield ◽  
C. R. Wronski ◽  
A. R. Badzian ◽  
...  

ABSTRACTWe describe the electrical characteristics of boron doped homoepitaxial diamond films fabricated using a plasma assisted CVD process, formation of ohmic contacts, high temperature (580°C) Schottky diodes, and a rudimentary diamond MESFET. We also report reversible changes of the conductive state of the diamond surface by various surface treatments for both natural and thin-film diamonds.


2016 ◽  
Vol 50 (6) ◽  
pp. 810-814 ◽  
Author(s):  
S. A. Zuev ◽  
G. V. Kilessa ◽  
E. E. Asanov ◽  
V. V. Starostenko ◽  
S. V. Pokrova

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