Influence of Nanoparticles, Low Melting Point (LMP) Fillers, and Conducting Polymers on Electrical, Mechanical, and Reliability Performance of Micro-Filled Conducting Adhesives for Z-Axis Interconnections

Recent studies have shown the presence of voids in several face-centered cubic metals after neutron irradiation at elevated temperatures. These voids were found when the irradiation temperature was above 0.3 Tm where Tm is the absolute melting point, and were ascribed to the agglomeration of lattice vacancies resulting from fast neutron generated displacement cascades. The present paper reports the existence of similar voids in the body-centered cubic metals tungsten and molybdenum.

Download Full-text

The observation of nano-voids in Au thin films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126627 ◽

1987 ◽

Vol 45 ◽

pp. 366-367

Author(s):

William Krakow

Keyword(s):

Thin Films ◽

Melting Point ◽

Present Author ◽

Stacking Faults ◽

Damage Threshold ◽

Ionic Species ◽

Rare Gases ◽

Chain Defects ◽

Vacancy Chains ◽

Au Thin Films

It has long been known that defects such as stacking faults and voids can be quenched from various alloyed metals heated to near their melting point. Today it is common practice to irradiate samples with various ionic species of rare gases which also form voids containing solidified phases of the same atomic species, e.g. ref. 3. Equivalently, electron irradiation has been used to produce damage events, e.g. ref. 4. Generally all of the above mentioned studies have relied on diffraction contrast to observe the defects produced down to a dimension of perhaps 10 to 20Å. Also all these studies have used ions or electrons which exceeded the damage threshold for knockon events. In the case of higher resolution studies the present author has identified vacancy and interstitial type chain defects in ion irradiated Si and was able to identify both di-interstitial and di-vacancy chains running through the foil.

Download Full-text

Electronic structure studies of conducting polymers by electron energy-loss spectroscopy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100163265 ◽

1996 ◽

Vol 54 ◽

pp. 160-161

Author(s):

J. Fink

Keyword(s):

Electronic Structure ◽

Conducting Polymers ◽

Conjugated Polymers ◽

Electron Acceptors ◽

Electron Donors ◽

Light Emitting ◽

One Dimensional ◽

New Class ◽

Electrical Conductivities ◽

Electron Energy Loss

Conducting polymers comprises a new class of materials achieving electrical conductivities which rival those of the best metals. The parent compounds (conjugated polymers) are quasi-one-dimensional semiconductors. These polymers can be doped by electron acceptors or electron donors. The prototype of these materials is polyacetylene (PA). There are various other conjugated polymers such as polyparaphenylene, polyphenylenevinylene, polypoyrrole or polythiophene. The doped systems, i.e. the conducting polymers, have intersting potential technological applications such as replacement of conventional metals in electronic shielding and antistatic equipment, rechargable batteries, and flexible light emitting diodes.Although these systems have been investigated almost 20 years, the electronic structure of the doped metallic systems is not clear and even the reason for the gap in undoped semiconducting systems is under discussion.

Download Full-text