Quantum ballistic transport in ultra-small silicon channel cylindrical gate-all-around junction less nanowire transistor using NEGF formalism

2016 ◽  
Author(s):  
Md. Mohsinur Rahman Adnan ◽  
Md Samzid Bin Hafiz ◽  
Nujhat Tasneem ◽  
Quazi D.M. Khosru
Keyword(s):  
Ballistic Transport ◽  
Nanowire Transistor ◽  
Quantum Ballistic Transport

Efficient Simulation and Analysis of Quantum Ballistic Transport in Nanodevices With AWE

2012 ◽  
Vol 59 (2) ◽  
pp. 468-476 ◽  
Author(s):  
Jun Z. Huang ◽  
Weng Cho Chew ◽  
Min Tang ◽  
Lijun Jiang
Keyword(s):  
Ballistic Transport ◽  
Efficient Simulation ◽  
Quantum Ballistic Transport

Quantum ballistic transport through a zero-dimensional structure

1989 ◽  
Vol 5 (4) ◽  
pp. 599-602 ◽  
Author(s):  
C.G. Smith ◽  
M. Pepper ◽  
H. Ahmed ◽  
J.E. Frost ◽  
D.G. Hasko ◽  
...  
Keyword(s):  
Ballistic Transport ◽  
Dimensional Structure ◽  
Quantum Ballistic Transport

scholarly journals Quantum ballistic transport by interacting two-electron states in quasi-one-dimensional channels

AIP Advances ◽  
2015 ◽  
Vol 5 (11) ◽  
pp. 117227 ◽  
Author(s):  
Danhong Huang ◽  
Godfrey Gumbs ◽  
Yonatan Abranyos ◽  
Michael Pepper ◽  
Sanjeev Kumar
Keyword(s):  
Ballistic Transport ◽  
Electron States ◽  
One Dimensional ◽  
Quantum Ballistic Transport

Electrical Transport in Carbon Nanotube Y-junctions- a Paradigm for Novel Functionality at the Nanoscale

2006 ◽  
Vol 922 ◽  
Author(s):  
Jeongwon Park ◽  
Chiara Daraio ◽  
Apparao Rao ◽  
Prabhakar Bandaru
Keyword(s):  
Carbon Nanotube ◽  
Electrical Transport ◽  
High Frequency ◽  
Annealing Temperature ◽  
Ballistic Transport ◽  
Logic Gates ◽  
Novel Devices ◽  
Quantum Ballistic Transport ◽  
Current Blocking ◽  
High Frequency Performance

AbstractCarbon Nanotube (CNT) morphologies with a self-contained gate, such as Y-junctions, offer a new way of exploiting features unique to the nanoscale, such as quantum ballistic transport. The advantages of low power and high frequency operation can then be applied to the fabrication of novel devices. Several other novel functionalities in Y- CNTs, including rectification, switching, high-frequency performance, and logic gates have been experimentally verified1. Y-CNT geometry dependent current blocking behavior, as a function of annealing temperature has also been observed. In view of the above observations, we propose that Y-CNTs can be used as prototypical nanoelectronic components.

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