Electrical Transport in Carbon Nanotube Y-junctions- a Paradigm for Novel Functionality at the Nanoscale

2006 ◽  
Vol 922 ◽  
Author(s):  
Jeongwon Park ◽  
Chiara Daraio ◽  
Apparao Rao ◽  
Prabhakar Bandaru

AbstractCarbon Nanotube (CNT) morphologies with a self-contained gate, such as Y-junctions, offer a new way of exploiting features unique to the nanoscale, such as quantum ballistic transport. The advantages of low power and high frequency operation can then be applied to the fabrication of novel devices. Several other novel functionalities in Y- CNTs, including rectification, switching, high-frequency performance, and logic gates have been experimentally verified1. Y-CNT geometry dependent current blocking behavior, as a function of annealing temperature has also been observed. In view of the above observations, we propose that Y-CNTs can be used as prototypical nanoelectronic components.

2012 ◽  
Vol 101 (5) ◽  
pp. 053123 ◽  
Author(s):  
Mathias Steiner ◽  
Michael Engel ◽  
Yu-Ming Lin ◽  
Yanqing Wu ◽  
Keith Jenkins ◽  
...  

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
S. Hamieh

Compact model of single-walled semiconducting carbon nanotube field-effect transistors (CNTFETs) implementing the calculation of energy conduction subband minima under VHDLAMS simulator is used to explore the high-frequency performance potential of CNTFET. The cutoff frequency expected for a MOSFET-like CNTFET is well below the performance limit, due to the large parasitic capacitance between electrodes. We show that using an array of parallel nanotubes as the transistor channel combined in a finger geometry to produce a single transistor significantly reduces the parasitic capacitance per tube and, thereby, improves high-frequency performance.


2007 ◽  
Vol 204 (6) ◽  
pp. 1808-1813 ◽  
Author(s):  
Kaoru Narita ◽  
Hiroo Hongo ◽  
Masahiko Ishida ◽  
Fumiyuki Nihey

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