Quantum ballistic transport in the junctionless nanowire pinch-off field effect transistor

2011 ◽  
Vol 10 (1-2) ◽  
pp. 216-221 ◽  
Author(s):  
Dries Sels ◽  
Bart Sorée ◽  
Guido Groeseneken
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ballistic Transport ◽  
Effect Transistor ◽  
Quantum Ballistic Transport

scholarly journals Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 309
Author(s):  
Jie Gu ◽  
Qingzhu Zhang ◽  
Zhenhua Wu ◽  
Jiaxin Yao ◽  
Zhaohao Zhang ◽  
...  
Keyword(s):  
Quantum Interference ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Ballistic Transport ◽  
Oxide Semiconductor ◽  
Body Effect ◽  
Gate Control ◽  
Effect Transistor ◽  
P Type

A 16-nm-Lg p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias.

scholarly journals Carbon-Based Micro/Nano Devices for Transistors, Sensors, and Memories

2022 ◽  
Vol 2152 (1) ◽  
pp. 012033
Author(s):  
Guida Lin
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Structural Characteristics ◽  
Ballistic Transport ◽  
Reducing Power ◽  
Single Atom ◽  
Storage Mechanism ◽  
Nano Sensors ◽  
Charge Storage Mechanism ◽  
Effect Transistor

Abstract The ballistic transport of electrons and unique structural characteristics of graphene and carbon nanotubes enable them to play an important role in nano electronical appliances. Nanodevices based on carbon nano materials can further reduce device size without affecting performance. Here, this paper analyzes Fin Field-effect transistor (FinFET) and Tunnel Field-effect transistor (TFET) based on graphene nanoribbon (GNR) and carbon nanotube which could be used for reducing power consumption. Then it summarizes the applications of graphene in micro/nano sensors based on the electrical, mechanical, optical, and thermal properties of graphene. Graphene’s single-atom thickness and charge storage mechanism provide itself with great potential in the field of resistive memory. Graphene is also widely used in flexible electronic devices.

Quasi-Ballistic Transport Model for Graphene Field-Effect Transistor

2013 ◽  
Vol 60 (7) ◽  
pp. 2410-2414 ◽  
Author(s):  
Guangxi Hu ◽  
Shuyan Hu ◽  
Ran Liu ◽  
Lingli Wang ◽  
Xing Zhou ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Transport Model ◽  
Ballistic Transport ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

2014 ◽  
Vol E97.C (7) ◽  
pp. 677-682
Author(s):  
Sung YUN WOO ◽  
Young JUN YOON ◽  
Jae HWA SEO ◽  
Gwan MIN YOO ◽  
Seongjae CHO ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Biosensor Based on Ion-Sensitive Field-Effect Transistor Using Minimum Contact to Float-ing Gate

2019 ◽  
Vol 24 (4) ◽  
pp. 407-414
Author(s):  
Oksana V. Gubanova ◽  
◽  
Evgeniy V. Kuznetsov ◽  
Elena N. Rybachek ◽  
Alexander N. Saurov ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor
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