Investigation of Thermoelectric Properties for Ge2Sb2Te5 Thin Films Obtained by Magnetron Sputtering

2021 ◽  
Author(s):  
Dmitriy V. Pepelyaev ◽  
Dmitriy Yu. Terekhov ◽  
Irina A. Voloshchuk ◽  
Alexey V. Babich
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Thermoelectric Properties

scholarly journals Thermoelectric Properties of Amorphous Zr-Ni-Sn Thin Films Deposited by Magnetron Sputtering

2015 ◽  
Vol 44 (6) ◽  
pp. 1957-1962 ◽  
Author(s):  
Yang Zhou ◽  
Qing Tan ◽  
Jie Zhu ◽  
Siyang Li ◽  
Chenjin Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Thermoelectric Properties

Thermoelectric properties of Zn4Sb3 thin films prepared by magnetron sputtering

2003 ◽  
Vol 443 (1-2) ◽  
pp. 84-90 ◽  
Author(s):  
L.T Zhang ◽  
M Tsutsui ◽  
K Ito ◽  
M Yamaguchi
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Thermoelectric Properties

scholarly journals Thermoelectric Properties of Zn0.98Al0.02O Thin Films Prepared by RF Magnetron Sputtering

2004 ◽  
Vol 112 (1306) ◽  
pp. 327-331 ◽  
Author(s):  
Mika UENO ◽  
Yutaka YOSHIDA ◽  
Yoshiaki TAKAI ◽  
Masataka YAMAGUCHI
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Thermoelectric Properties ◽  
Rf Magnetron Sputtering

scholarly journals Thermoelectric Properties of Thin Films of Germanium-Gold Alloy Obtained by Magnetron Sputtering

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 120 ◽  
Author(s):  
Damian Nowak ◽  
Marta Turkiewicz ◽  
Natalia Solnica
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Thermoelectric Properties ◽  
Gold Alloy ◽  
Deposition Process ◽  
Substrate Bias Voltage ◽  
Glass Substrates ◽  
Thermoelectric Voltage ◽  
Ag Contact ◽  
Germanium Gold

In this paper, the electric and thermoelectric properties of thin films of germanium–gold alloy (Ge–Au) are discussed in terms of choosing the optimal deposition process and post-processing conditions to obtain Ge–Au layers with the best thermoelectric parameters. Thin films were fabricated by magnetron sputtering using the Ge–Au alloy target onto glass substrates at two various conditions; during one of the sputtering processes, the external substrate bias voltage (Ub = −150 V) was used. After deposition thin films were annealed in the atmosphere of N2 at various temperatures (473, 523 and 573 K) to investigate the influence of annealing temperature on the electric and thermoelectric properties of films. Afterwards, the thermocouples were created by deposition of the NiCrSi/Ag contact pads onto Ge–Au films. In this work, particular attention has been paid to thermoelectric properties of fabricated thin films—the thermoelectric voltage, Seebeck coefficient, power factor PF and dimensionless figure of merit ZT were determined.

Thermoelectric properties of Al-doped Mg2Si thin films deposited by magnetron sputtering

2016 ◽  
Vol 386 ◽  
pp. 389-392 ◽  
Author(s):  
Zhi-jian Chen ◽  
Bai-yang Zhou ◽  
Jian-xin Li ◽  
Cui-lian Wen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Thermoelectric Properties
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