scholarly journals Thermoelectric Properties of Thin Films of Germanium-Gold Alloy Obtained by Magnetron Sputtering

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 120 ◽  
Author(s):  
Damian Nowak ◽  
Marta Turkiewicz ◽  
Natalia Solnica
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Thermoelectric Properties ◽  
Gold Alloy ◽  
Deposition Process ◽  
Substrate Bias Voltage ◽  
Glass Substrates ◽  
Thermoelectric Voltage ◽  
Ag Contact ◽  
Germanium Gold

In this paper, the electric and thermoelectric properties of thin films of germanium–gold alloy (Ge–Au) are discussed in terms of choosing the optimal deposition process and post-processing conditions to obtain Ge–Au layers with the best thermoelectric parameters. Thin films were fabricated by magnetron sputtering using the Ge–Au alloy target onto glass substrates at two various conditions; during one of the sputtering processes, the external substrate bias voltage (Ub = −150 V) was used. After deposition thin films were annealed in the atmosphere of N2 at various temperatures (473, 523 and 573 K) to investigate the influence of annealing temperature on the electric and thermoelectric properties of films. Afterwards, the thermocouples were created by deposition of the NiCrSi/Ag contact pads onto Ge–Au films. In this work, particular attention has been paid to thermoelectric properties of fabricated thin films—the thermoelectric voltage, Seebeck coefficient, power factor PF and dimensionless figure of merit ZT were determined.

Enhanced Crystallinity of Microcrystalline Silicon Thin Films Using Deuterium in Reactive Magnetron Sputter Deposition at 230°C

1998 ◽  
Vol 507 ◽  
Author(s):  
J. E. Gerbi ◽  
P. Voyles ◽  
J. M. Gibson ◽  
O J. R. Abelson
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Deposition Process ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Glass Substrates ◽  
Silicon Thin Films ◽  
Partial Pressures ◽  
Magnetron Sputter Deposition ◽  
Enhanced Crystallinity

ABSTRACTWe analyze the formation kinetics and microstructure of hydrogenated vs. deuterated microcrystalline (μc-Si:H or D) thin films using real-time spectroscopic ellipsometry, post- deposition thermal hydrogen evolution, and TEM. The films are deposited by reactive magnetron sputtering of a silicon target in Ar (1.65 mT) with added partial pressures of H2or D2(0-5.5mT) on Coming 7059 glass substrates at 230°C. Amorphous films are deposited when PH2=0. When hydrogen is added to the chamber, the reactive magnetron sputtering process generates a flux of fast neutral H which promotes stc-Si growth. The substitution of D for H varies the kinetics of hydrogen reflection from the target and implantation into the growing film. We analyze the amorphous to microcrystalline transition as a function of the isotope (H2or D2) and pressure used in the deposition process. We find that the films enter the microcrystalline regime at lower D2pressures than H2pressures. Furthermore, the <ε2> data determined by ellipsometry have a different shape for deuterated films, compared to hydrogenated films at similar growth pressures. This indicates changes in band structure which we interpret as evidence for enhanced crystallinity.

THERMOELECTRIC AND MAGNETO-THERMOELECTRIC PROPERTIES OF Ga-DOPED ZnO THIN FILMS BY RF MAGNETRON SPUTTERING

2014 ◽  
Vol 21 (03) ◽  
pp. 1450033 ◽  
Author(s):  
H. LIU ◽  
L. FANG ◽  
F. WU ◽  
D. X. TIAN ◽  
W. J. LI ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Thermoelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Doping Content ◽  
Glass Substrates ◽  
Seebeck Coefficients ◽  
Maximum Value ◽  
Ga Doping

Zn (1-x) Ga x O thin films (x = 0.01, 0.03, 0.05, 0.07 named as GZO1, GZO2, GZO3, GZO4, respectively) were deposited on glass substrates by RF magnetron sputtering. The crystal structure, electrical, thermoelectric and magneto-thermoelectric properties of GZO films were investigated. It is found that all the GZO films are polycrystalline and preferentially oriented in the c-axis. The electrical resistivity of GZO films decreased first with increasing Ga doping content before it reached a minimum at x = 0.05, and then increased with further increasing Ga doping content. The magnetic fields (B) ranging from 0 to 1.5 T are perpendicularly applied to the films to study the magneto-thermoelectric properties. It is observed that the absolute values of Seebeck coefficients (|S|) of GZO1, GZO2, GZO3 show marked variation with magnetic field and obtain the maximum value at B = 0.5 T. Whereas the |S| value of GZO4 fluctuates slightly with magnetic field and reaches its peak at B = 1.0 T. The magneto-thermoelectric properties are analyzed and we propose that this behavior is mainly attributed to the effect of magnetic field on the electron transport.

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

Study on preparing PLT(28) thin film and its electro-optic effect

1998 ◽  
Vol 13 (5) ◽  
pp. 1266-1270 ◽  
Author(s):  
Ai-Li Ding ◽  
Wei-Gen Luo ◽  
P. S. Qiu ◽  
J. W. Feng ◽  
R. T. Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Faraday Effect ◽  
The Other ◽  
Ceramic Powders ◽  
Glass Substrates ◽  
Annealing Conditions ◽  
Electro Optic

PLT(28) thin films deposited on glass substrates were studied by two sputtering processes. One is an in situ magnetron sputtering and the other is a low-temperature magnetron sputtering. The sintered PLT ceramic powders are used as a sputtering target for both processes. The influences of sputtering and annealing conditions on structure and crystallinity of the films were investigated. The electro-optic (E-O) properties of PLT(28) thin films prepared by the two processes were determined by a technique according to Faraday effect. The researches showed the E-O properties were strongly affected by the sputtering process. The film with larger grains exhibits stronger E-O effect. The quadratic E-O coefficient of PLT(28) thin film varies in the range of 0.1 × 10−16 to 1.0 × 10−16 (m/v)2.

Study on Structural Properties of Gallium and Titanium Doped Zinc Oxide Films Deposited by Magnetron Sputtering

2014 ◽  
Vol 908 ◽  
pp. 124-128 ◽  
Author(s):  
S.B. Chen ◽  
Z.Y. Zhong
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Crystal Structures ◽  
X Ray Diffraction ◽  
Hexagonal Crystal ◽  
Working Pressure ◽  
Sintered Ceramic ◽  
Glass Substrates ◽  
Zinc Oxide Films

Thin films of transparent conducting gallium and titanium doped zinc oxide (GTZO) were prepared on glass substrates by magnetron sputtering technique using a sintered ceramic target. The microstructural properties of the deposited thin films were characterized with X-ray diffraction (XRD). The results demonstrated that the polycrystalline GTZO thin films consist of the hexagonal crystal structures with c-axis as the preferred growth orientation normal to the substrate, and that the working pressure significantly affects the crystal structures of the thin films. The GTZO thin film deposited at the working pressure of 0.4 Pa has the best crystallinity, the largest grain size and the lowest stress.

scholarly journals Residual Oxygen Effects on the Properties of MoS2 Thin Films Deposited at Different Temperatures by Magnetron Sputtering

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1183
Author(s):  
Peiyu Wang ◽  
Xin Wang ◽  
Fengyin Tan ◽  
Ronghua Zhang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Energy Dispersive Spectrometer ◽  
Rf Magnetron Sputtering ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Oxygen Atoms

Molybdenum disulfide (MoS2) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, optical, electrical properties and deposition rate of the obtained thin films was investigated by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman, absorption and transmission spectroscopies, a resistivity-measuring instrument with the four-probe method, and a step profiler. It was found that the MoS2 thin films deposited at the temperatures of 150 °C, 225 °C, and 300 °C were of polycrystalline with a (101) preferred orientation. With increasing deposition temperatures from 150 °C to 300 °C, the crystallization quality of the MoS2 thin films was improved, the Raman vibrational modes were strengthened, the deposition rate decreased, and the optical transmission and bandgap increased. When the deposition temperature increased to above 375 °C, the molecular atoms were partially combined with oxygen atoms to form MoO3 thin film, which caused significant changes in the structural, optical, and electrical properties of the obtained thin films. Therefore, it was necessary to control the deposition temperature and reduce the contamination of oxygen atoms throughout the magnetron sputtering process.

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