Large-scale silicon photonics integrated circuits for interconnect and telecom applications

Author(s):  
Hiroshi Fukuda ◽  
Kotaro Takeda ◽  
Tatsuro Hiraki ◽  
Tai Tsuchizawa ◽  
Hidetaka Nishi ◽  
...  
2017 ◽  
Vol 25 (9) ◽  
pp. 9712 ◽  
Author(s):  
Zeqin Lu ◽  
Jaspreet Jhoja ◽  
Jackson Klein ◽  
Xu Wang ◽  
Amy Liu ◽  
...  

2021 ◽  
Author(s):  
A. Moscoso-Martir ◽  
J. Koch ◽  
J. Muller ◽  
A. Tabatabaei Mashayekh ◽  
A. D. Das ◽  
...  

2015 ◽  
Vol 23 (7) ◽  
pp. 9369 ◽  
Author(s):  
Philippe P. Absil ◽  
Peter Verheyen ◽  
Peter De Heyn ◽  
Marianna Pantouvaki ◽  
Guy Lepage ◽  
...  

Author(s):  
Simon Thomas

Trends in the technology development of very large scale integrated circuits (VLSI) have been in the direction of higher density of components with smaller dimensions. The scaling down of device dimensions has been not only laterally but also in depth. Such efforts in miniaturization bring with them new developments in materials and processing. Successful implementation of these efforts is, to a large extent, dependent on the proper understanding of the material properties, process technologies and reliability issues, through adequate analytical studies. The analytical instrumentation technology has, fortunately, kept pace with the basic requirements of devices with lateral dimensions in the micron/ submicron range and depths of the order of nonometers. Often, newer analytical techniques have emerged or the more conventional techniques have been adapted to meet the more stringent requirements. As such, a variety of analytical techniques are available today to aid an analyst in the efforts of VLSI process evaluation. Generally such analytical efforts are divided into the characterization of materials, evaluation of processing steps and the analysis of failures.


Author(s):  
V. C. Kannan ◽  
A. K. Singh ◽  
R. B. Irwin ◽  
S. Chittipeddi ◽  
F. D. Nkansah ◽  
...  

Titanium nitride (TiN) films have historically been used as diffusion barrier between silicon and aluminum, as an adhesion layer for tungsten deposition and as an interconnect material etc. Recently, the role of TiN films as contact barriers in very large scale silicon integrated circuits (VLSI) has been extensively studied. TiN films have resistivities on the order of 20μ Ω-cm which is much lower than that of titanium (nearly 66μ Ω-cm). Deposited TiN films show resistivities which vary from 20 to 100μ Ω-cm depending upon the type of deposition and process conditions. TiNx is known to have a NaCl type crystal structure for a wide range of compositions. Change in color from metallic luster to gold reflects the stabilization of the TiNx (FCC) phase over the close packed Ti(N) hexagonal phase. It was found that TiN (1:1) ideal composition with the FCC (NaCl-type) structure gives the best electrical property.


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