Some applications of electron beam microanalysis techniques in VLSI process evaluation

1983 ◽  
Vol 41 ◽  
pp. 160-161
Author(s):  
Simon Thomas
Keyword(s):  
Integrated Circuits ◽  
Process Evaluation ◽  
Large Scale ◽  
Technology Development ◽  
Analytical Techniques ◽  
Successful Implementation ◽  
Analysis Of Failures ◽  
Characterization Of Materials ◽  
Circuits Vlsi

Trends in the technology development of very large scale integrated circuits (VLSI) have been in the direction of higher density of components with smaller dimensions. The scaling down of device dimensions has been not only laterally but also in depth. Such efforts in miniaturization bring with them new developments in materials and processing. Successful implementation of these efforts is, to a large extent, dependent on the proper understanding of the material properties, process technologies and reliability issues, through adequate analytical studies. The analytical instrumentation technology has, fortunately, kept pace with the basic requirements of devices with lateral dimensions in the micron/ submicron range and depths of the order of nonometers. Often, newer analytical techniques have emerged or the more conventional techniques have been adapted to meet the more stringent requirements. As such, a variety of analytical techniques are available today to aid an analyst in the efforts of VLSI process evaluation. Generally such analytical efforts are divided into the characterization of materials, evaluation of processing steps and the analysis of failures.

Microscale sensors based on silicon carbide and silicon

2008 ◽  
Vol 222 (1) ◽  
pp. 19-26 ◽  
Author(s):  
R Cheung ◽  
P Argyrakis
Keyword(s):  
Silicon Carbide ◽  
Integrated Circuits ◽  
Large Scale ◽  
Microelectromechanical Systems ◽  
Pressure Sensors ◽  
Biologically Inspired ◽  
Out Of Plane ◽  
Circuits Vlsi ◽  
Silicon Based

The current paper consists of two topics related to microelectromechanical systems (MEMS). The first topic reviews recent advances made in the area of silicon carbide (SiC) MEMS for applications in harsh environments. Given the unique properties of SiC, the potential and progress in the development and deployment of the harsh environment material for the fabrication and characterization of resonators and pressure sensors are described. The second topic details the motivation behind the study of biologically inspired systems and how silicon-based microscale sensors with out-of-plane structures could be integrated with analogue very-large-scale integrated circuits (VLSI) for insect-inspired robotic studies.

Electron microscopy study of reactively sputter-deposited Ti/N films on silicon

1992 ◽  
Vol 50 (2) ◽  
pp. 1362-1363
Author(s):  
V. C. Kannan ◽  
A. K. Singh ◽  
R. B. Irwin ◽  
S. Chittipeddi ◽  
F. D. Nkansah ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Large Scale ◽  
Hexagonal Phase ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Process Conditions ◽  
Tin Films ◽  
Wide Range ◽  
Fcc Phase ◽  
Circuits Vlsi

Titanium nitride (TiN) films have historically been used as diffusion barrier between silicon and aluminum, as an adhesion layer for tungsten deposition and as an interconnect material etc. Recently, the role of TiN films as contact barriers in very large scale silicon integrated circuits (VLSI) has been extensively studied. TiN films have resistivities on the order of 20μ Ω-cm which is much lower than that of titanium (nearly 66μ Ω-cm). Deposited TiN films show resistivities which vary from 20 to 100μ Ω-cm depending upon the type of deposition and process conditions. TiNx is known to have a NaCl type crystal structure for a wide range of compositions. Change in color from metallic luster to gold reflects the stabilization of the TiNx (FCC) phase over the close packed Ti(N) hexagonal phase. It was found that TiN (1:1) ideal composition with the FCC (NaCl-type) structure gives the best electrical property.

Characterization of Interconnect Defects Using Scanning Thermal Conductivity Microscopy

2004 ◽  
Author(s):  
H.W. Ho ◽  
J.C.H. Phang ◽  
A. Altes ◽  
L.J. Balk
Keyword(s):  
Thermal Conductivity ◽  
Integrated Circuits ◽  
Large Scale

Abstract In this paper, scanning thermal conductivity microscopy is used to characterize interconnect defects due to electromigration. Similar features are observed both in the temperature and thermal conductivity micrographs. The key advantage of the thermal conductivity mode is that specimen bias is not required. This is an important advantage for the characterization of defects in large scale integrated circuits. The thermal conductivity micrographs of extrusion, exposed and subsurface voids are presented and compared with the corresponding topography and temperature micrographs.

scholarly journals Learning Representations of Inorganic Materials from Generative Adversarial Networks

Symmetry ◽  
2020 ◽  
Vol 12 (11) ◽  
pp. 1889
Author(s):  
Tiantian Hu ◽  
Hui Song ◽  
Tao Jiang ◽  
Shaobo Li
Keyword(s):  
Large Scale ◽  
Inorganic Materials ◽  
Molecular Composition ◽  
Materials Characterization ◽  
Generative Adversarial Networks ◽  
Feature Engineering ◽  
Material Research ◽  
Generative Adversarial Network ◽  
Characterization Of Materials

The two most important aspects of material research using deep learning (DL) or machine learning (ML) are the characteristics of materials data and learning algorithms, where the proper characterization of materials data is essential for generating accurate models. At present, the characterization of materials based on the molecular composition includes some methods based on feature engineering, such as Magpie and One-hot. Although these characterization methods have achieved significant results in materials research, these methods based on feature engineering cannot guarantee the integrity of materials characterization. One possible approach is to learn the materials characterization via neural networks using the chemical knowledge and implicit composition rules shown in large-scale known materials. This article chooses an adversarial method to learn the composition of atoms using the Generative Adversarial Network (GAN), which makes sense for data symmetry. The total loss value of the discriminator on the test set is reduced from 4.1e13 to 0.3194, indicating that the designed GAN network can well capture the combination of atoms in real materials. We then use the trained discriminator weights for material characterization and predict bandgap, formation energy, critical temperature (Tc) of superconductors on the Open Quantum Materials Database (OQMD), Materials Project (MP), and SuperCond datasets. Experiments show that when using the same predictive model, our proposed method performs better than One-hot and Magpie. This article provides an effective method for characterizing materials based on molecular composition in addition to Magpie, One-hot, etc. In addition, the generator learned in this study generates hypothetical materials with the same distribution as known materials, and these hypotheses can be used as a source for new material discovery.

Shallow Junction Formation by the Redistribution of Species Implanted into Cobalt Silicide

1987 ◽  
Vol 92 ◽  
Author(s):  
Brian M. Ditchek ◽  
Marvin Tabasky Marvin Tabasky ◽  
Emel S. Bulat
Keyword(s):  
Integrated Circuits ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Large Scale ◽  
Lateral Diffusion ◽  
Rapid Thermal Anneal ◽  
Alignment Process ◽  
Circuits Vlsi ◽  
Recent Demonstration

Interest in CoSi2 as a metallization for very large scale integrated circuits (VLSI) has grown rapidly since the recent demonstration of a simple self-aligned process performed by rapid thermal annealing.1-4 Using a rapid thermal anneal (RTA) to directly silicide Co on Si yields smooth low-sheet-resistance films with little or no lateral diffusion and low contact resistance. In addition, it has been shown that rapid thermal annealing can result in reasonable quality epitaxial CoSi2 on (111) Si wafers.5 An important advantage of CoSi2 over the more commonly used TiSi2 metallization is the relative simplicity of its self-aligned silicidation process. Due to the low reactivity of Co with SiO2, a simple two-step self-alignment process is possible instead of the three-step process necessary with TiSi2.6 The primary disadvantage of CoSi2 is the amount of Si consumed for equal silicide sheet resistance. For example, to yield a silicide sheet resistance of 1.5 1/LD, Van den Hove 4 finds that compared to the TiSi, process, the CoSi, process would consume an additional 24 nm of Si. (This disadvantage can be minimized if very shallow junctions can be formed under the CoSi2.)

Large-Scale Molecular Dynamics Modeling of a-SiO2

2012 ◽  
Vol 602-604 ◽  
pp. 751-754
Author(s):  
Ning Bo Liao
Keyword(s):  
Integrated Circuits ◽  
Silicon Dioxide ◽  
Large Scale ◽  
Distribution Functions ◽  
Dynamics Modeling ◽  
Fracture Properties ◽  
Molecular Dynamics Modeling ◽  
Scale Characterization ◽  
Pair Distribution Functions

Silicon dioxide plays an important role in integrated circuits and microelectronics. However, the experiments have limitations in micro/nano-scale characterization of fracture properties at high temperatures. In this paper, the structural and fracture properties of amorphous silicon dioxide (a-SiO2) were studied at temperatures up to 1500K. The simulation results consist with the experiments on pair distribution functions, structure factor and angular distributions.

scholarly journals Impact of Variation of Device Parameters on the Electrical Characteristics of Double-Gate Mosfets

2020 ◽  
Vol 9 (3) ◽  
pp. 3658-3661
Keyword(s):  
Integrated Circuits ◽  
Large Scale ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Double Gate ◽  
Electrical Characteristics ◽  
Short Channel ◽  
Channel Effects ◽  
Circuits Vlsi ◽  
Logical Functions

Very large scale integrated circuits (VLSI) have been possible owing to the shrinking of metal-oxide semiconductor field-effect transistors (MOSFETs). By reducing the dimensions of the device it is possible to have high density on the chip. This increases the number of logical functions that can be implemented on a given dimension of the chip. Along with the advantages associated with the shrinking of the devices, it also has certain drawbacks commonly known as short-channel effects. Due to these effects, device characteristics deviate from its expected values. There are many techniques through which these deviations can be minimized. One of the promising and highly researched techniques these days is the use of Multi-gate (MG) transistors in VLSI. Double-gate (DG) transistor is one among MG transistors. In DG MOSFET, substrate is surrounded by gates from two opposite sides. This leads to more control over the channel electrons by the gate terminals. In this paper, the consequence of change of various device constraints on the electrical characteristics of the DG MOSFETs will be investigated. Through the results, one can know to what extent the electrical properties changes when the dimensions and/or material properties are changed. This will be very helpful in determining the maximum current associated with those dimensions of DG MOSFETs.

Non-Invasive Characterization for Long-Term Preservation of Cultural Heritage

2011 ◽  
Vol 1319 ◽  
Author(s):  
F. G France
Keyword(s):  
Cultural Heritage ◽  
Spectral Response ◽  
Analytical Techniques ◽  
Imaging Systems ◽  
Response Monitoring ◽  
Non Invasive ◽  
Characterization Of Materials ◽  
Long Term Preservation

ABSTRACTDevelopments in non-invasive analytical techniques advance the preservation of cultural heritage materials by identifying and analyzing substrates and media. Spectral imaging systems have been used as a tool for non-invasive characterization of cultural heritage, allowing the collection of chemical identification information about materials without sampling. The Library of Congress has been developing the application of hyperspectral imaging to the preservation and analysis of cultural heritage materials as a powerful, non-contact technique to allow non-invasive characterization of materials, by identifying and characterizing colorants, inks and substrates through their unique spectral response, monitoring deterioration or changes due to exhibit and other environmental conditions, and capturing lost and deteriorated information. The resulting image cube creates a new “digital cultural object” that is related to, but recognized as a distinct entity from the original. The range of data this object contains encourages multidisciplinary collaboration for the integration of preservation, societal and cultural information.

INSIGHT INTO THE GROWTH MECHANISM OF WS2 NANOTUBES IN THE SCALED-UP FLUIDIZED-BED REACTOR

NANO ◽  
2009 ◽  
Vol 04 (02) ◽  
pp. 91-98 ◽  
Author(s):  
A. ZAK ◽  
L. SALLACAN-ECKER ◽  
A. MARGOLIN ◽  
M. GENUT ◽  
R. TENNE
Keyword(s):  
Mechanical Behavior ◽  
Fluidized Bed ◽  
Growth Mechanism ◽  
Large Scale ◽  
Analytical Techniques ◽  
Fluidized Bed Reactor ◽  
Crystalline Order ◽  
Catalyst Free ◽  
Insight Into

The growth mechanism of WS2 nanotubes in the large-scale fluidized-bed reactor is studied in greater detail. This study and careful parameterization of the conditions within the reactor lead to the synthesis of large amounts (50–100 g/batch) of pure nanotubes, which appear as a fluffy powder, and (400–500 g/batch) of nanotubes/nanoplatelets mixture (50:50), where nanotubes usually coming in bundles. The two products are obtained simultaneously in the same reaction but are collected in different zones of the reactor, in a reproducible fashion. The characterization of the nanotubes, which grow catalyst-free, by a number of analytical techniques is reported. The majority of the nanotubes range from 10 to 50 micron in length and 20–180 nm in diameter. The nanotubes reveal highly crystalline order, suggesting very good mechanical behavior with numerous applications.

Sign in / Sign up

Export Citation Format

Share Document