System for extensive characterization of MOS and SOI MOS structures by means of charge pumping

2003 ◽  
Author(s):  
S. Szostak ◽  
L. Lukasiak ◽  
A. Jakubowski
Keyword(s):  
Charge Pumping ◽  
Mos Structures

Characterization of front and back Si-SiO/sub 2/ interfaces in thick- and thin-film silicon-on-insulator MOS structures by the charge-pumping technique

1989 ◽  
Vol 36 (9) ◽  
pp. 1746-1750 ◽  
Author(s):  
D.J. Wouters ◽  
M.R. Tack ◽  
G.V. Groeseneken ◽  
H.E. Maes ◽  
C.L. Claeys
Keyword(s):  
Thin Film ◽  
Silicon On Insulator ◽  
Charge Pumping ◽  
Thin Film Silicon ◽  
Mos Structures

Characterization of GaN MOS Structures Using Photoanodically Grown Oxides with Respect to FET Devices

2000 ◽  
Vol 639 ◽  
Author(s):  
D. Mistele ◽  
T. Rotter ◽  
R. Ferretti ◽  
F. Fedler ◽  
H. Klausing ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Photoelectrochemical Cell ◽  
Oxide Growth ◽  
Metal Source ◽  
Device Applications ◽  
Small Density ◽  
Wet Chemical ◽  
Mos Structures ◽  
Strong Depletion

ABSTRACTPhotoanodically grown Ga2O3 layers were characterized with respect to their suitability as gate dielectrics for GaN based MOSFET Device applications. The Ga2O3 layers were produced in a photoelectrochemical cell using aqueous solutions of KOH. IV characterization of MOS structures show insulating behavior of the oxide layers and CV measurements indicate a small density of states at the oxide/GaN interface. Integrating the wet chemical oxide growth in a MOSFET device fabricating process includes tungsten as gate metal together with H2O2 as etching solution for the gate metal. Source/drain areas were made free of oxide by the alkaline developer of a conventional lithographic step and metallization was done by using the liftoff technique. MOS structures show no inversion mode but strong depletion in reverse biasing mode.

Interface characterization of InSb MOS structures

1982 ◽  
Vol 89 (4) ◽  
pp. 401-406 ◽  
Author(s):  
Y. Shapira ◽  
J. Bregman ◽  
Z. Calahorra ◽  
R. Goshen
Keyword(s):  
Interface Characterization ◽  
Mos Structures

Prototyping and characterization of radiation hardened SiC MOS structures

2019 ◽  
Author(s):  
Francesco Pintacuda ◽  
Vincenzo Cantarella ◽  
Michele Muschitiello ◽  
Silvia Massetti
Keyword(s):  
Radiation Hardened ◽  
Mos Structures

Characterization of interface states at Au/SnO2/n-Si (MOS) structures

Vacuum ◽  
2008 ◽  
Vol 82 (11) ◽  
pp. 1203-1207 ◽  
Author(s):  
A. Tataroğlu ◽  
Ş. Altındal
Keyword(s):  
Interface States ◽  
Mos Structures
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