Characterization of MOSFET Interface States Using the Charge Pumping Technique

Characterization of Hot Electron Induced Interface States in LATID MOS Devices Using an Improved Charge Pumping Method

10.7567/ssdm.1993.a-4-3 ◽

1993 ◽

Author(s):

Steve S. Chung ◽

J.-J. Yang ◽

C.-H. Tang ◽

P.-C. Chou

Keyword(s):

Interface States ◽

Hot Electron ◽

Charge Pumping ◽

Mos Devices

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On-chip charge pumping method for characterization of interface states of ultra thin gate oxide in nano cmos technology

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. ◽

10.1109/iedm.2005.1609449 ◽

2006 ◽

Cited By ~ 1

Author(s):

Hee-Hwan Ji ◽

Yong-Goo Kim ◽

In-Shik Han ◽

Kyung-Min Kim ◽

Jin-Suk Wang ◽

...

Keyword(s):

Gate Oxide ◽

Cmos Technology ◽

Interface States ◽

Charge Pumping ◽

On Chip ◽

Thin Gate Oxide

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Characterization of Subgap Density-of-States by Sub-Bandgap Optical Charge Pumping in In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2020.17785 ◽

2020 ◽

Vol 20 (7) ◽

pp. 4287-4291

Author(s):

Han Bin Yoo ◽

Seong Kwang Kim ◽

Junyeap Kim ◽

Jintae Yu ◽

Sung-Jin Choi ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect Transistors ◽

Channel Length ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Bandgap Energy ◽

Charge Pumping ◽

Optical Charge

We report an experimental characterization of the interface states (Dit(E)) by using the subthreshold drain current with optical charge pumping effect in In0.53Ga0.47As metal-oxide-semiconductor fieldeffect transistors (MOSFETs). The interface states are derived from the difference between the dark and photo states of the current–voltage characteristics. We used a sub-bandgap photon (i.e., with the photon energy lower than the bandgap energy, Eph < Eg) to optically excite trapped carriers over the bandgap in In0.53Ga0.47As MOSFETs. We combined a gate bias-dependent capacitance model to determine the channel length-independent oxide capacitance. Then, we estimated the channel length-independent interface states in In0.53Ga0.47As MOSFETs having different channel lengths (Lch = 5, 10, and 25 [μm]) for a fixed overlap length (Lov = 5 [μm]).

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